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- Unter Next-Generation-Lithografie (NGL, dt. „Lithografieverfahren der nächsten Generation“) werden in der Halbleitertechnik Strukturierungsverfahren zusammengefasst, die Kandidaten für die Nachfolge der konventionellen Fotolithografie auf Basis von Ultraviolettstrahlung in der industriellen Fertigung von mikroelektronischen Schaltkreisen sind. Die Verfahren können grob in drei Gruppen eingeteilt werden: 1.
* Verfahren basierend auf elektromagnetischer Strahlung mit noch kürzerer Wellenlänge, beispielsweise EUV- und Röntgenlithografie 2.
* Verfahren basierend auf anderen Teilchenstrahlungen, beispielsweise Elektronen- und Ionenstrahllithografie 3.
* alternative Verfahren, wie Nanoprägelithografie oder die (de)
- Next-generation lithography or NGL is a term used in integrated circuit manufacturing to describe the lithography technologies in development which are intended to replace current techniques. The term applies to any lithography method which uses a shorter-wavelength light or beam type than the current state of the art, such as X-ray lithography, electron beam lithography, focused ion beam lithography, and nanoimprint lithography. The term may also be used to describe techniques which achieve finer resolution features from an existing light wavelength. Many technologies once termed "next generation" have entered commercial production, and open-air photolithography, with visible light projected through hand-drawn photomasks, has gradually progressed to deep-UV immersion lithography using optical proximity correction, inverse lithography technology, off-axis illumination, phase-shift masks, double patterning, and multiple patterning. In the late 2010s, the combination of many such techniques was able to achieve features on the order of 20 nm with the 193 nm-wavelength ArF excimer laser in the 14 nm, 10 nm and 7 nm processes, though at the cost of adding processing steps and therefore cost. 13.5 nm extreme ultraviolet (EUV) lithography, long considered a leading candidate for next-generation lithography, began to enter commercial mass-production in 2018. As of 2021, Samsung and TSMC were gradually phasing EUV lithography into their production lines, as it became economical to replace multiple processing steps with single EUV steps. As of the early 2020s, many EUV techniques are still in development and many challenges remain to be solved, positioning EUV lithography as being in transition from "next generation" to "state of the art." Candidates for next-generation lithography beyond EUV include X-ray lithography, electron beam lithography, focused ion beam lithography, and nanoimprint lithography. Several of these technologies have experienced periods of popularity, but have remained outcompeted by the continuing improvements in photolithography. Electron beam lithography was most popular during the 1970s, but was replaced in popularity by X-ray lithography during the 1980s and early 1990s, and then by EUV lithography from the mid-1990s to the mid-2000s. Focused ion beam lithography has carved a niche for itself in the area of defect repair. Nanoimprint's popularity is rising, and is positioned to succeed EUV as the most popular choice for next-generation lithography, due to its inherent simplicity and low cost of operation as well as its success in the LED, hard disk drive and microfluidics sectors. The rise and fall in popularity of each NGL candidate has largely hinged on its throughput capability and its cost of operation and implementation. Electron beam and nanoimprint lithography are limited mainly by the throughput, while EUV and X-ray lithography are limited by implementation and operation costs. The projection of charged particles (ions or electrons) through stencil masks was also popularly considered in the early 2000s but eventually fell victim to both low throughput and implementation difficulties. (en)
- 次世代リソグラフィ(Next-generation lithography NGL)は次世代の集積回路を製造する技術で定義は時代とともに変遷している。 (ja)
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| rdfs:comment
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- 次世代リソグラフィ(Next-generation lithography NGL)は次世代の集積回路を製造する技術で定義は時代とともに変遷している。 (ja)
- Unter Next-Generation-Lithografie (NGL, dt. „Lithografieverfahren der nächsten Generation“) werden in der Halbleitertechnik Strukturierungsverfahren zusammengefasst, die Kandidaten für die Nachfolge der konventionellen Fotolithografie auf Basis von Ultraviolettstrahlung in der industriellen Fertigung von mikroelektronischen Schaltkreisen sind. Die Verfahren können grob in drei Gruppen eingeteilt werden: (de)
- Next-generation lithography or NGL is a term used in integrated circuit manufacturing to describe the lithography technologies in development which are intended to replace current techniques. The term applies to any lithography method which uses a shorter-wavelength light or beam type than the current state of the art, such as X-ray lithography, electron beam lithography, focused ion beam lithography, and nanoimprint lithography. The term may also be used to describe techniques which achieve finer resolution features from an existing light wavelength. (en)
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