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- Optical proximity correction (OPC, englisch, deutsch etwa: optische Nahbereichskorrektur) ist in der Halbleitertechnik ein Verfahren zur Korrektur bzw. Verringerung von Abbildungsfehlern von Strukturen bei fotolithografischen Prozessen. Es gehört zur Gruppe der Auflösungsverbesserungsverfahren (engl.: resolution enhancement technique, RET), welche bei Strukturgrößen unterhalb der Lichtwellenlänge (193 nm) zum Einsatz kommen. (de)
- Optical proximity correction (OPC) is a photolithography enhancement technique commonly used to compensate for image errors due to diffraction or process effects. The need for OPC is seen mainly in the making of semiconductor devices and is due to the limitations of light to maintain the edge placement integrity of the original design, after processing, into the etched image on the silicon wafer. These projected images appear with irregularities such as line widths that are narrower or wider than designed, these are amenable to compensation by changing the pattern on the photomask used for imaging. Other distortions such as rounded corners are driven by the resolution of the optical imaging tool and are harder to compensate for. Such distortions, if not corrected for, may significantly alter the electrical properties of what was being fabricated. Optical proximity correction corrects these errors by moving edges or adding extra polygons to the pattern written on the photomask. This may be driven by pre-computed look-up tables based on width and spacing between features (known as rule based OPC) or by using compact models to dynamically simulate the final pattern and thereby drive the movement of edges, typically broken into sections, to find the best solution, (this is known as model based OPC). The objective is to reproduce on the semiconductor wafer, as well as possible, the original layout drawn by the designer. The two most visible benefits of OPC are correcting linewidth differences seen between features in regions of different density (e.g., center vs. edge of an array, or nested vs. isolated lines), and line end shortening (e.g., gate overlap on field oxide). For the former case, this may be used together with resolution enhancement technologies such as scattering bars (sub-resolution lines placed adjacent to resolvable lines) together with linewidth adjustments. For the latter case, "dog-ear" (serif or hammerhead) features may be generated at the line end in the design. OPC has a cost impact on photomask fabrication whereby the mask write time is related to the complexity of the mask and data-files and similarly mask inspection for defects takes longer as the finer edge control requires a smaller spot size. (en)
- La correction optique de proximité (OPC, pour l'anglais optical proximity correction) est une technique d'amélioration de la photolithographie, communément utilisée en microélectronique, pour compenser les erreurs dues à la diffraction ou aux effets liés au procédé de fabrication. (fr)
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- Optical proximity correction (OPC, englisch, deutsch etwa: optische Nahbereichskorrektur) ist in der Halbleitertechnik ein Verfahren zur Korrektur bzw. Verringerung von Abbildungsfehlern von Strukturen bei fotolithografischen Prozessen. Es gehört zur Gruppe der Auflösungsverbesserungsverfahren (engl.: resolution enhancement technique, RET), welche bei Strukturgrößen unterhalb der Lichtwellenlänge (193 nm) zum Einsatz kommen. (de)
- La correction optique de proximité (OPC, pour l'anglais optical proximity correction) est une technique d'amélioration de la photolithographie, communément utilisée en microélectronique, pour compenser les erreurs dues à la diffraction ou aux effets liés au procédé de fabrication. (fr)
- Optical proximity correction (OPC) is a photolithography enhancement technique commonly used to compensate for image errors due to diffraction or process effects. The need for OPC is seen mainly in the making of semiconductor devices and is due to the limitations of light to maintain the edge placement integrity of the original design, after processing, into the etched image on the silicon wafer. These projected images appear with irregularities such as line widths that are narrower or wider than designed, these are amenable to compensation by changing the pattern on the photomask used for imaging. Other distortions such as rounded corners are driven by the resolution of the optical imaging tool and are harder to compensate for. Such distortions, if not corrected for, may significantly alt (en)
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- Correcció de proximitat òptica (ca)
- Optical proximity correction (de)
- Correction optique de proximité (fr)
- Optical proximity correction (en)
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