About: Low-κ dielectric

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In semiconductor manufacturing, a low-κ is a material with a small relative dielectric constant (κ, kappa) relative to silicon dioxide. Low-κ dielectric material implementation is one of several strategies used to allow continued scaling of microelectronic devices, colloquially referred to as extending Moore's law. In digital circuits, insulating dielectrics separate the conducting parts (wire interconnects and transistors) from one another. As components have scaled and transistors have gotten closer together, the insulating dielectrics have thinned to the point where charge build up and crosstalk adversely affect the performance of the device. Replacing the silicon dioxide with a low-κ dielectric of the same thickness reduces parasitic capacitance, enabling faster switching speeds (in ca

Attributes	Values
rdfs:label	Dielèctric low-k (ca) Low-k-Dielektrikum (de) Low-κ dielectric (en) 低介电常数材料 (zh)
rdfs:comment	Dielèctric low-k (en anglès baixa k) fa referència a un material de constant dielèctrica o també permitivitat relativa (εr) de molt baix valor . Els materials dielèctrics amb baixa k s'empren en la fabricació de semiconductors on usualment remplacen el diòxid de silici (K=3,7-3,9) . Els materials dielèctrics low-k és una de les tecnologies que permeten de continuar la miniaturització dels components electrònics segons la llei de Moore. (ca) 低介电常数材料（low-K材料）是当前半导体行业研究的热门话题。通过降低集成电路中使用的介电材料的介電係數，可以降低集成电路的漏电电流，降低导线之间的电容效应，降低集成电路发热等等。低介电常数材料的研究是同高分子材料密切相关的。传统半导体使用二氧化硅作为介电材料，氧化硅的介電係數约为4。真空的介電係數为1，干燥空气的介電係數接近于1。 (zh) Als Low-k-Dielektrikum wird in der Halbleitertechnologie ein Material bezeichnet, das eine niedrigere Dielektrizitätszahl als SiO2 aufweist, d. h. εr < 3,9. Angestrebt werden heutzutage sogenannte Ultra-low-k-Materialien, deren Dielektrizitätszahl kleiner als 2,4 ist. (de) In semiconductor manufacturing, a low-κ is a material with a small relative dielectric constant (κ, kappa) relative to silicon dioxide. Low-κ dielectric material implementation is one of several strategies used to allow continued scaling of microelectronic devices, colloquially referred to as extending Moore's law. In digital circuits, insulating dielectrics separate the conducting parts (wire interconnects and transistors) from one another. As components have scaled and transistors have gotten closer together, the insulating dielectrics have thinned to the point where charge build up and crosstalk adversely affect the performance of the device. Replacing the silicon dioxide with a low-κ dielectric of the same thickness reduces parasitic capacitance, enabling faster switching speeds (in ca (en)
dcterms:subject	Semiconductor fabrication materials Materials science
Wikipage page ID	934064 (xsd:integer)
Wikipage revision ID	1122164298 (xsd:integer)
Link from a Wikipage to another Wikipage	Electrical network Benzocyclobutene Permittivity 130 nanometer 14 nanometer 180 nanometer Chemical vapor deposition Coefficient of thermal expansion Moore's law Crosstalk Annealing by short circuit Silicon dioxide Polyimide 45 nanometer 90 nanometer PTFE Semiconductor fabrication materials Synchronous circuit Relative static permittivity Photoresist Hybrid material Hydrogen silsesquioxane Materials science Kappa High-κ dielectric Transistor Dielectric CMOS Integrated circuits Semiconductor Semiconductor industry Silicon UV curing Thermal oxidation Parasitic capacitance Relative dielectric constant Interconnect dbr:Polynorbornenes
Link from a Wikipage to an external page	https://web.archive.org/web/20041010091327/http:/nepp.nasa.gov/index_nasa.cfm/934/ https://web.archive.org/web/20070315202755/http:/www.gaas.org/Digests/2002/PDF/01c.pdf
sameAs	Low-κ dielectric Low-κ dielectric Low-κ dielectric Low-κ dielectric Low-κ dielectric Low-κ dielectric Low-κ dielectric
dbp:wikiPageUsesTemplate	dbt:Main dbt:Reflist
has abstract	Dielèctric low-k (en anglès baixa k) fa referència a un material de constant dielèctrica o també permitivitat relativa (εr) de molt baix valor . Els materials dielèctrics amb baixa k s'empren en la fabricació de semiconductors on usualment remplacen el diòxid de silici (K=3,7-3,9) . Els materials dielèctrics low-k és una de les tecnologies que permeten de continuar la miniaturització dels components electrònics segons la llei de Moore. (ca) Als Low-k-Dielektrikum wird in der Halbleitertechnologie ein Material bezeichnet, das eine niedrigere Dielektrizitätszahl als SiO2 aufweist, d. h. εr < 3,9. Angestrebt werden heutzutage sogenannte Ultra-low-k-Materialien, deren Dielektrizitätszahl kleiner als 2,4 ist. Die Bezeichnung „Low-k“ ist dem Englischen entlehnt, wo die Dielektrizitätszahl (relative Permittivität) häufig mit (kappa) bezeichnet wird, manchmal auch nur mit k.Im Gegensatz dazu stehen die High-k-Dielektrika, die als Gate-Isolator eingesetzt werden und durch ihre hohe Dielektrizitätszahl eine dickere Isolationsschicht erlauben und damit zur Reduzierung von Leckströmen (vgl. Tunneleffekt) beitragen. (de) In semiconductor manufacturing, a low-κ is a material with a small relative dielectric constant (κ, kappa) relative to silicon dioxide. Low-κ dielectric material implementation is one of several strategies used to allow continued scaling of microelectronic devices, colloquially referred to as extending Moore's law. In digital circuits, insulating dielectrics separate the conducting parts (wire interconnects and transistors) from one another. As components have scaled and transistors have gotten closer together, the insulating dielectrics have thinned to the point where charge build up and crosstalk adversely affect the performance of the device. Replacing the silicon dioxide with a low-κ dielectric of the same thickness reduces parasitic capacitance, enabling faster switching speeds (in case of synchronous circuits) and lower heat dissipation. In conversation such materials may be referred to as "low-k" (spoken "low-kay") rather than "low-κ" (low-kappa). (en) 低介电常数材料（low-K材料）是当前半导体行业研究的热门话题。通过降低集成电路中使用的介电材料的介電係數，可以降低集成电路的漏电电流，降低导线之间的电容效应，降低集成电路发热等等。低介电常数材料的研究是同高分子材料密切相关的。传统半导体使用二氧化硅作为介电材料，氧化硅的介電係數约为4。真空的介電係數为1，干燥空气的介電係數接近于1。 (zh)
prov:wasDerivedFrom	wikipedia-en:Low-κ_dielectric?oldid=1122164298&ns=0
page length (characters) of wiki page	7421 (xsd:nonNegativeInteger)
foaf:isPrimaryTopicOf	wikipedia-en:Low-κ_dielectric
is Link from a Wikipage to another Wikipage of	Processor power dissipation Benzocyclobutene Pentium 4 EEStor Index of physics articles (L) Integrated circuit Interconnect (integrated circuits) SiLK 14 nm process Chemical vapor deposition Ellipsometry Low-κ Ghavam Shahidi Low-k Hardmask Phenom II 65 nm process Dissipation factor 45 nm process Fluorosilicate glass Semiconductor device fabrication High-κ dielectric Relative permittivity Dielectric Air gap Silicon on insulator IBM airgap Low-K Nanoimprint lithography Low-k dielectric Silicon–germanium PA-8000

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