About: International Conference on Defects in Semiconductors

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International Conference on Defects in Semiconductors (ICDS) is a long running series of scientific meetings which focuses on research into point and extended defects in semiconductors. It developed as a spin off from the International Conference on the Physics of Semiconductors, remaining a satellite meeting from the first conference on Radiation Effects inSemiconductors in Gatlinburg in 1959 (now known as ICDS 1) until becoming a separate meeting for ICDS 16. The ICDS covers both basic and applied research topics, with special emphasis on applications of results to semiconducting materials and semiconductors-based device functionality. Traditionally, the ICDS has been held every 2 years in various cities around the world with frequent associated proceedings. The previous conference (ICDS

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  • International Conference on Defects in Semiconductors (ICDS) is a long running series of scientific meetings which focuses on research into point and extended defects in semiconductors. It developed as a spin off from the International Conference on the Physics of Semiconductors, remaining a satellite meeting from the first conference on Radiation Effects inSemiconductors in Gatlinburg in 1959 (now known as ICDS 1) until becoming a separate meeting for ICDS 16. The ICDS covers both basic and applied research topics, with special emphasis on applications of results to semiconducting materials and semiconductors-based device functionality. Traditionally, the ICDS has been held every 2 years in various cities around the world with frequent associated proceedings. The previous conference (ICDS 29) was held in Matsue, Japan, from 31 July to 4 August 2017 and was attended by researchers from 32 countries. ICDS 31 was hosted by the University of Oslo between 25 and 30 July 2021. Its proceedings was published as part of a special topic issue of the Journal of Applied Physics. The next ICDS (the 32nd) will be in Delaware in 2023. (en)
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  • Biennial
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  • ICDS (en)
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  • United States, Europe, Asia (en)
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  • Biennial (en)
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  • 195 (xsd:integer)
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  • International Conference on Defects in Semiconductors (ICDS) is a long running series of scientific meetings which focuses on research into point and extended defects in semiconductors. It developed as a spin off from the International Conference on the Physics of Semiconductors, remaining a satellite meeting from the first conference on Radiation Effects inSemiconductors in Gatlinburg in 1959 (now known as ICDS 1) until becoming a separate meeting for ICDS 16. The ICDS covers both basic and applied research topics, with special emphasis on applications of results to semiconducting materials and semiconductors-based device functionality. Traditionally, the ICDS has been held every 2 years in various cities around the world with frequent associated proceedings. The previous conference (ICDS (en)
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  • International Conference on Defects in Semiconductors (en)
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foaf:name
  • (en)
  • ICDS (en)
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