About: Piezotronics

An Entity of Type: SemiconductorDevice104171831, from Named Graph: http://dbpedia.org, within Data Space: dbpedia.org

Piezotronics effect is using the piezoelectric potential (piezopotential) created in materials with piezoelectricity as a “gate” voltage to tune/control the charge carrier transport properties for fabricating new devices. Neil A Downie showed how simple it was to build simple demonstrations on a macro-scale using a sandwich of piezoelectric material and carbon piezoresistive material to make an FET-like amplifying device and put it in a book of science projects for students in 2006. The fundamental principle of piezotronics was introduced by Prof. Zhong Lin Wang at Georgia Institute of Technology in 2007.A series of electronic devices have been demonstrated based on this effect, including piezopotential gated field-effect transistor, piezopotential gated diode, strain sensors, force/flow s

Property Value
dbo:abstract
  • Piezotronics effect is using the piezoelectric potential (piezopotential) created in materials with piezoelectricity as a “gate” voltage to tune/control the charge carrier transport properties for fabricating new devices. Neil A Downie showed how simple it was to build simple demonstrations on a macro-scale using a sandwich of piezoelectric material and carbon piezoresistive material to make an FET-like amplifying device and put it in a book of science projects for students in 2006. The fundamental principle of piezotronics was introduced by Prof. Zhong Lin Wang at Georgia Institute of Technology in 2007.A series of electronic devices have been demonstrated based on this effect, including piezopotential gated field-effect transistor, piezopotential gated diode, strain sensors, force/flow sensors, hybrid field-effect transistor, piezotronic logic gates, electromechanical memories, etc. Piezotronic devices are regarded as a new semiconductor-device category. Piezotronics is likely to have important applications in sensor, human-silicon technology interfacing, MEMS, nanorobotics and active flexible electronics. (en)
  • 压电电子效应 是利用压电电势作为“门”电压对电荷载流子的传输特性进行调整和控制,可以用于制备新型的电子器件。压电电子学的基本原理是由佐治亚理工学院的王中林教授在2007年提出来的。基于这个效应,已经制备了一系列的电子器件,包括压电电场栅控的场效应晶体管, 压电电场控制的二极管, 应变传感器, 力/流量传感器, 混合 场效应晶体管, 压电 , 机电 存储器, 等等. 压电电子器件被认为是一个新的半导体器件种类。 压电电子学在传感器,人机交互技术,微机电系统,纳米机器人,以及有源柔性电子学等领域都可能具有重大的应用前景。 (zh)
dbo:thumbnail
dbo:wikiPageID
  • 34516380 (xsd:integer)
dbo:wikiPageLength
  • 7171 (xsd:nonNegativeInteger)
dbo:wikiPageRevisionID
  • 1057197388 (xsd:integer)
dbo:wikiPageWikiLink
dbp:wikiPageUsesTemplate
dcterms:subject
rdf:type
rdfs:comment
  • 压电电子效应 是利用压电电势作为“门”电压对电荷载流子的传输特性进行调整和控制,可以用于制备新型的电子器件。压电电子学的基本原理是由佐治亚理工学院的王中林教授在2007年提出来的。基于这个效应,已经制备了一系列的电子器件,包括压电电场栅控的场效应晶体管, 压电电场控制的二极管, 应变传感器, 力/流量传感器, 混合 场效应晶体管, 压电 , 机电 存储器, 等等. 压电电子器件被认为是一个新的半导体器件种类。 压电电子学在传感器,人机交互技术,微机电系统,纳米机器人,以及有源柔性电子学等领域都可能具有重大的应用前景。 (zh)
  • Piezotronics effect is using the piezoelectric potential (piezopotential) created in materials with piezoelectricity as a “gate” voltage to tune/control the charge carrier transport properties for fabricating new devices. Neil A Downie showed how simple it was to build simple demonstrations on a macro-scale using a sandwich of piezoelectric material and carbon piezoresistive material to make an FET-like amplifying device and put it in a book of science projects for students in 2006. The fundamental principle of piezotronics was introduced by Prof. Zhong Lin Wang at Georgia Institute of Technology in 2007.A series of electronic devices have been demonstrated based on this effect, including piezopotential gated field-effect transistor, piezopotential gated diode, strain sensors, force/flow s (en)
rdfs:label
  • Piezotronics (en)
  • 压电电子学 (zh)
owl:sameAs
prov:wasDerivedFrom
foaf:depiction
foaf:isPrimaryTopicOf
is dbo:wikiPageWikiLink of
is foaf:primaryTopic of
Powered by OpenLink Virtuoso    This material is Open Knowledge     W3C Semantic Web Technology     This material is Open Knowledge    Valid XHTML + RDFa
This content was extracted from Wikipedia and is licensed under the Creative Commons Attribution-ShareAlike 3.0 Unported License