About: Piezophototronics

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Piezo-phototronic effect is a three-way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, using the piezoelectric potential (piezopotential) that is generated by applying a strain to a semiconductor with piezoelectricity to control the carrier generation, transport, separation and/or recombination at metal–semiconductor junction or p–n junction for improving the performance of optoelectronic devices, such as photodetector, solar cell and light-emitting diode. Prof. Zhong Lin Wang at Georgia Institute of Technology proposed the fundamental principle of this effect in 2010.

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  • Piezo-phototronic effect is a three-way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, using the piezoelectric potential (piezopotential) that is generated by applying a strain to a semiconductor with piezoelectricity to control the carrier generation, transport, separation and/or recombination at metal–semiconductor junction or p–n junction for improving the performance of optoelectronic devices, such as photodetector, solar cell and light-emitting diode. Prof. Zhong Lin Wang at Georgia Institute of Technology proposed the fundamental principle of this effect in 2010. (en)
  • 压电光电子效应 是利用在压电半导体材料中施加应变所产生的压电电势来控制在金属-半导体接触或者PN结处载流子的产生，传输，分离以及/或者复合，从而提高光电器件（例如光子探测器、 太阳能电池和发光二极管 ）的性能。佐治亚理工学院的王中林教授于2010年提出了这种效应的基本原理。 (zh)
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  • Piezo-phototronic effect is a three-way coupling effect of piezoelectric, semiconductor and photonic properties in non-central symmetric semiconductor materials, using the piezoelectric potential (piezopotential) that is generated by applying a strain to a semiconductor with piezoelectricity to control the carrier generation, transport, separation and/or recombination at metal–semiconductor junction or p–n junction for improving the performance of optoelectronic devices, such as photodetector, solar cell and light-emitting diode. Prof. Zhong Lin Wang at Georgia Institute of Technology proposed the fundamental principle of this effect in 2010. (en)
  • 压电光电子效应 是利用在压电半导体材料中施加应变所产生的压电电势来控制在金属-半导体接触或者PN结处载流子的产生，传输，分离以及/或者复合，从而提高光电器件（例如光子探测器、 太阳能电池和发光二极管 ）的性能。佐治亚理工学院的王中林教授于2010年提出了这种效应的基本原理。 (zh)
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  • Piezophototronics (en)
  • 压电光电子学 (zh)
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