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- In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, quantum confinement and hot carrier degradation. (en)
- 電子工学において短チャネル効果は、チャネル長がソースとドレインの接合の空乏層幅に相当するMOSFETで起こる。短チャネル効果には、ドレイン誘起障壁低下、、などがある。 (ja)
- Em eletrônica, efeito de canal curto ocorre em transistores MOSFETs quando o tamanho do tem dimensões comparáveis a região de depleção do terminal Fonte e Dreno. Esse efeito implica particularmente na , , e . (pt)
- 短沟道效应（英語：short-channel effects）是当金属氧化物半导体场效应管的导电沟道长度降低到十几纳米、甚至几纳米量级时，晶体管出现的一些效应。这些效应主要包括阈值电压随着沟道长度降低而降低、、载流子表面散射、、离子化和热电子效应。 (zh)
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- In electronics, short-channel effects occur in MOSFETs in which the channel length is comparable to the depletion layer widths of the source and drain junctions. These effects include, in particular, drain-induced barrier lowering, velocity saturation, quantum confinement and hot carrier degradation. (en)
- 電子工学において短チャネル効果は、チャネル長がソースとドレインの接合の空乏層幅に相当するMOSFETで起こる。短チャネル効果には、ドレイン誘起障壁低下、、などがある。 (ja)
- Em eletrônica, efeito de canal curto ocorre em transistores MOSFETs quando o tamanho do tem dimensões comparáveis a região de depleção do terminal Fonte e Dreno. Esse efeito implica particularmente na , , e . (pt)
- 短沟道效应（英語：short-channel effects）是当金属氧化物半导体场效应管的导电沟道长度降低到十几纳米、甚至几纳米量级时，晶体管出现的一些效应。这些效应主要包括阈值电压随着沟道长度降低而降低、、载流子表面散射、、离子化和热电子效应。 (zh)
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| rdfs:label
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- 短チャネル効果 (ja)
- Short-channel effect (en)
- Efeito de canal curto (pt)
- 短沟道效应 (zh)
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