QBD is the term applied to the charge-to-breakdown measurement of a semiconductor device. It is a standard destructive test method used to determine the quality of gate oxides in MOS devices. It is equal to the total charge passing through the dielectric layer (i.e. electron or hole fluence multiplied by the elementary charge) just before failure. Thus QBD is a measure of time-dependent gate oxide breakdown. As a measure of oxide quality, QBD can also be a useful predictor of product reliability under specified electrical stress conditions.
Attributes | Values |
---|---|
rdf:type | |
rdfs:label |
|
rdfs:comment |
|
dcterms:subject | |
Wikipage page ID |
|
Wikipage revision ID |
|
Link from a Wikipage to another Wikipage |
|
sameAs | |
dbp:wikiPageUsesTemplate | |
has abstract |
|
gold:hypernym | |
prov:wasDerivedFrom | |
page length (characters) of wiki page |
|
foaf:isPrimaryTopicOf | |
is Link from a Wikipage to another Wikipage of | |
is Wikipage disambiguates of | |
is foaf:primaryTopic of |