• Facets (new session)
• Description
• Metadata
• Settings
  • Rule: ActivityStreamsMapasEquivalentb3sb3sifpdbprdf-labelfacetshttp://dbpedia.org/resource/inference/rules/dbpedia#http://dbpedia.org/resource/inference/rules/opencyc#http://dbpedia.org/resource/inference/rules/umbel#http://dbpedia.org/resource/inference/rules/yago#http://dbpedia.org/schema/property_rules#http://www.ontologyportal.org/inference/rules/SUMO#http://www.ontologyportal.org/inference/rules/WordNet#http://www.w3.org/2002/07/owl#ldpoplwebskos-transurn:det:rdf:labelvirtrdf-labelvirtrdf-urlNone
    
  • Inverse Functional Properties: Disabled (fastest) Apply to subjects only Apply to objects only Apply to both subjects and objects
  • "Same As": Disabled (fastest) Apply to subjects only Apply to objects only Apply to both subjects and objects (recommended) Apply to subjects, objects and predicates (not recommended on big datasets) Apply to predicates only (special use cases only)

About: QBD (electronics)     Goto   Sponge   Distinct   Permalink

An Entity of Type : yago:State100024720, within Data Space : dbpedia.org associated with source document(s)

Type: yago:WikicatSemiconductorDeviceDefectsyago:Abstraction100002137yago:Attribute100024264yago:Defect114464005yago:Imperfection114462666yago:State100024720 New Facet based on Instances of this Class

QBD is the term applied to the charge-to-breakdown measurement of a semiconductor device. It is a standard destructive test method used to determine the quality of gate oxides in MOS devices. It is equal to the total charge passing through the dielectric layer (i.e. electron or hole fluence multiplied by the elementary charge) just before failure. Thus QBD is a measure of time-dependent gate oxide breakdown. As a measure of oxide quality, QBD can also be a useful predictor of product reliability under specified electrical stress conditions.