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Subject Item: dbr:EEPROM
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rdfs:label: Electrically-Erasable Progammable Read Only EEPROM Electrically erasable programmable read-only memory Electrically-erasable programmable read-only memory EEPROM EEPROM EEPROM ذاكرة قراءة فقط قابلة للبرمجة والمسح الكهربائي EEPROM EEPROM Electrically Erasable Programmable Read-Only Memory EEPROM EEPROM EEPROM EEPROM EEPROM EEPROM 電子抹除式可複寫唯讀記憶體 EEPROM
rdfs:comment: EEPROM (англ. Electrically Erasable Programmable Read-Only Memory) — постійний запам'ятовувач, що програмується та очищується за допомогою електрики, один з видів енергонезалежної пам'яті. Пам'ять такого типу може очищуватися та заповнюватися інформацією декілька десятків тисяч разів. Використовується в твердотільних накопичувачах. Одним з різновидів EEPROM є флеш-пам'ять (англ. Flash Memory). EEPROM, E²PROM (od ang. electrically erasable programmable read-only memory), elektrycznie kasowalna i programowalna pamięć tylko do odczytu – rodzaj nieulotnej pamięci komputerowej. Pamięć EEPROM, w odróżnieniu od pamięci EPROM, może być kasowana i programowana tylko przy użyciu prądu elektrycznego. Liczba zapisów i kasowań jest ograniczona; w zależności od typu i producenta pamięci wynosi od 10 000 do 1 000 000 cykli. Po przekroczeniu tej wartości pamięć ulega uszkodzeniu. Liczba odczytów pamięci EEPROM jest natomiast nieograniczona. EEPROM (also called E2PROM) stands for electrically erasable programmable read-only memory and is a type of non-volatile memory used in computers, usually integrated in microcontrollers such as smart cards and remote keyless systems, or as a separate chip device to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed. Οι μνήμες EEPROM είναι μία νεότερη εξέλιξη των μνήμων ROM. Οι μνήμες, σε αντίθεση με τις μνήμες RAM, διατηρούν τα περιεχόμενά τους και μετά την διακοπή της τροφοδοσίας τους. Μπορούν όμως να διαγραφούν και να επαναπρογραμματιστούν με νέες, ακόμη και πάνω στο κύκλωμα στο οποίο είναι τοποθετημένες. EEPROM (též E2PROM) je anglická zkratka pro Electrically Erasable Programmable Read-Only Memory (Elektricky Vymazatelná Paměť pouze pro čtení). Jedná se o elektricky mazatelnou (nevolatilní) paměť typu ROM-RAM. Paměť má typickou životnost 200 tisíc zápisů (ATMega16) což je řádově více než paměť typu flash, další výhodou pamětí EEPROM je vyšší životnost dat v nich uložených, Typická hodnota Data Retention je 20 let (ATMega16), což je opět řádově více než u pamětí typu flash. Hlavní nevýhodou je vyšší složitost paměťové buňky a s tím související nižší hustota a vyšší cena. Využití této paměti je jako úložiště (např. nastavení hlasitosti u TV) a obecně dat, která se mění častěji než je životnost paměti flash. EEPROM（Electrically Erasable Programmable Read-Only Memory）は不揮発性メモリの一種。E2PROMとも表記される。コンピュータなどの電子機器において、設定情報など、電源を切っても保持すべきデータの記憶に用いられる。 USBメモリのように大量のデータを格納する用途では、従来型のEEPROMよりもその一種であるフラッシュメモリなどの方が経済的である。EEPROMはの配列でできている。 EEPROM (também escrita E2PROM, e pronunciada "e-e-prom"), sigla do inglês de Electrically-Erasable Programmable Read-Only Memory, é um tipo de memória não-volátil usada em computadores e outros dispositivos eletrônicos para armazenar pequenas quantidades de dados que precisam ser salvos quando a energia é removida, por exemplo, dados de configuração do dispositivo. Apesar de no nome se declarar Read-Only, esse foi classificado incorretamente, pois é tanto Read/Ler, quanto Write/Escrever, pelo fato de que códigos de erro no OBD-II poderem ser removidos independentemente, dentre outras características. Este se assemelha à denominação incorreta de ROM dos smartphones, conforme a Ciência da Computação. EEPROM o E²PROM, sigles de l'expressió anglesa electrically-erasable programmable read-only memory ("memòria ROM programable i esborrable elèctricament") és un tipus de memòria ROM que pot ser programada, esborrada i reprogramada elèctricament ౼a diferència de l'EPROM, que ha d'esborrar-se mitjançant un aparell que emet raigs ultraviolats౼. Són memòries no volàtils. Les cel·les de memòria d'una EEPROM estan constituïdes per un transistor MOS, que té una comporta flotant (estructura SAMOS), el seu estat normal aquesta tallat i la sortida proporciona un lògic. Encara que una EEPROM pot ser llegida un nombre il·limitat de vegades, "només" pot ser esborrada i reprogramada entre cent mil i un milió de vegades. Aquests dispositius solen comunicar-se mitjançant protocols com I²C, SPI i Microwire. Electrically erasable programmable read-only memory, acroniem EEPROM, ofwel 'elektrisch wisbaar, programmeerbaar alleen-lezen-geheugen', is een vorm van permanent geheugen (ook wel niet-vluchtig geheugen) die wordt gebruikt in computers en andere elektronische apparaten om kleine hoeveelheden data op te slaan. Het kan met behulp van een elektrische spanning gewist worden. Oudere typen EEPROM hadden vaak minstens 12 volt nodig, maar moderne typen EEPROM laten zich vaak al bij 5 of zelfs 3 volt wissen. La mémoire EEPROM (Electrically-Erasable Programmable Read-Only Memory ou mémoire morte effaçable électriquement et programmable) (aussi appelée E2PROM ou E²PROM) est un type de mémoire morte. Une mémoire morte est une mémoire utilisée pour enregistrer des informations qui ne doivent pas être perdues lorsque l'appareil qui les contient n'est plus alimenté en électricité. Ein EEPROM (engl. Abk. für electrically erasable programmable read-only memory, wörtlich: elektrisch löschbarer programmierbarer Nur-Lese-Speicher, auch E2PROM) ist ein nichtflüchtiger, elektronischer Speicherbaustein, dessen gespeicherte Information elektrisch gelöscht werden kann. Er ist verwandt mit anderen löschbaren Speichern, wie dem durch UV-Licht löschbaren EPROMs und dem ebenfalls elektrisch löschbaren Flash-Speicher. Er wird verwendet zur Speicherung kleinerer Datenmengen in elektrischen Geräten, bei denen die Information auch ohne anliegende Versorgungsspannung erhalten bleiben muss oder bei denen einzelne Speicherelemente bzw. Datenworte einfach zu ändern sein müssen. Zur Speicherung größerer Datenmengen wie z. B. dem BIOS in PC-Systemen sind meist Flash-Speicher ökonomischer. 電子抹除式可複寫唯讀記憶體（英語：Electrically-Erasable Programmable Read-Only Memory，简称：EEPROM或E2PROM），是一種只读存储器（ROM），可以通過電子方式多次複寫。相比EPROM， EEPROM 不需要用紫外線照射，也不需取下，就可以用特定的電壓，來抹除芯片上的信息，以便寫入新的數據， EEPROM 屬於SPD（串行存在檢測）技術的一種延伸。 EEPROM分为四種工作模式：讀取模式、寫入模式、擦除模式、校驗模式。讀取時，芯片只需要Vcc低電壓（一般+5V）供電。而在編程寫入時，芯片会通過Vpp（一般+25V, 有时較新者會使用 +12V 或 +5V）獲得，並通過（一般為50ms）寫入數據。擦除時，只需使用，不需要紫外線照射，便可以擦除指定地址中的內容。為保證寫入正確，每寫入一塊數據後，都需要進行類似於讀取的校驗步驟，若錯誤就重新寫入。現今的 EEPROM 通常已不再需要使用額外的 Vpp 電壓，且寫入時間也已有縮短。在民用的DDR SDRAM及其主流後續產品中，一般 EEPROM 主要用於保存內存的開發者信息、生產時間、內存信息、通訊協議、、供電電壓、供電電流、物理訊息以及內存XMP等訊息，且電腦會在开机自檢（Power-On Self-Test；POST）時會讀取這些訊息以保持電腦的正常开机。 EEPROM (Electrically Erasable Programmable Read-Only Memory, ditulis pula dengan E2PROM) adalah sejenis chip memori tidak-terhapus yang digunakan dalam komputer dan peralatan elektronik lain untuk menyimpan sejumlah konfigurasi data pada alat elektronik tersebut yang tetap harus terjaga meskipun sumber daya diputuskan, seperti tabel kalibrasi atau kofigurasi perangkat. EEPROM (Electrically Erasable Programmable Read-Only Memory, E2PROM, 문화어: 전기적지우기가능프로그램화읽기전용기억기)는 비휘발성 메모리(NVM)의 하나이다. EEPROM (anche scritto E2PROM), acronimo di Electrically Erasable Programmable Read-Only Memory (Memoria Elettricamente Cancellabile Programmabile di Sola-Lettura), è un tipo di memoria non volatile, usata nei computer e altri dispositivi elettronici per memorizzare piccole quantità di dati che devono essere mantenuti quando viene tolta l'alimentazione elettrica (per esempio la configurazione del dispositivo). Le operazioni di scrittura, cancellazione e riscrittura hanno luogo elettricamente. EEPROM (англ. Electrically Erasable Programmable Read-Only Memory) — электрически стираемое перепрограммируемое ПЗУ (ЭСППЗУ), один из видов энергонезависимой памяти (таких, как PROM и EPROM). На сегодняшний день классическая двухтранзисторная технология EEPROM практически полностью вытеснена флеш-памятью типа NOR. Однако название EEPROM прочно закрепилось за сегментом памяти малой ёмкости независимо от технологии. EEPROM, E2PROM edo Electrically-Erasable Progammable Read Only (euskaraz: Irakurtzeko Bakarrik Memoria Elektrikoki Ezabagarri eta Programagarria) hainbat alditan grabatu eta ezabatu daitekeen ROM familiako memoria da. Informazioa ezabatzeko pultsu elektrikoak erabiltzen dira. ذاكرة القراءة القابلة للمسح هي نوع من الذاكرات القابلة للبرمجة والمسح كهربائيا. EEPROM o E²PROM son las siglas de Electrically Erasable Programmable Read-Only Memory (ROM programable y borrable eléctricamente). Es un tipo de memoria ROM que puede ser programada, borrada y reprogramada eléctricamente, a diferencia de la EPROM que ha de borrarse mediante un aparato que emite rayos ultravioleta. Son memorias no volátiles. Aunque una EEPROM puede ser leída un número ilimitado de veces, sólo puede ser borrada y reprogramada entre 100.000 y un millón de veces.
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dbo:abstract: EEPROM (anche scritto E2PROM), acronimo di Electrically Erasable Programmable Read-Only Memory (Memoria Elettricamente Cancellabile Programmabile di Sola-Lettura), è un tipo di memoria non volatile, usata nei computer e altri dispositivi elettronici per memorizzare piccole quantità di dati che devono essere mantenuti quando viene tolta l'alimentazione elettrica (per esempio la configurazione del dispositivo). Le operazioni di scrittura, cancellazione e riscrittura hanno luogo elettricamente. Ciascuna cella di memoria capace di memorizzare un singolo bit è costituita da due transistori MOS, uno "di memoria" e uno "di accesso". Ein EEPROM (engl. Abk. für electrically erasable programmable read-only memory, wörtlich: elektrisch löschbarer programmierbarer Nur-Lese-Speicher, auch E2PROM) ist ein nichtflüchtiger, elektronischer Speicherbaustein, dessen gespeicherte Information elektrisch gelöscht werden kann. Er ist verwandt mit anderen löschbaren Speichern, wie dem durch UV-Licht löschbaren EPROMs und dem ebenfalls elektrisch löschbaren Flash-Speicher. Er wird verwendet zur Speicherung kleinerer Datenmengen in elektrischen Geräten, bei denen die Information auch ohne anliegende Versorgungsspannung erhalten bleiben muss oder bei denen einzelne Speicherelemente bzw. Datenworte einfach zu ändern sein müssen. Zur Speicherung größerer Datenmengen wie z. B. dem BIOS in PC-Systemen sind meist Flash-Speicher ökonomischer. ذاكرة القراءة القابلة للمسح هي نوع من الذاكرات القابلة للبرمجة والمسح كهربائيا. Electrically erasable programmable read-only memory, acroniem EEPROM, ofwel 'elektrisch wisbaar, programmeerbaar alleen-lezen-geheugen', is een vorm van permanent geheugen (ook wel niet-vluchtig geheugen) die wordt gebruikt in computers en andere elektronische apparaten om kleine hoeveelheden data op te slaan. Het kan met behulp van een elektrische spanning gewist worden. Oudere typen EEPROM hadden vaak minstens 12 volt nodig, maar moderne typen EEPROM laten zich vaak al bij 5 of zelfs 3 volt wissen. Het grote voordeel van dit type geheugen is dat het gewist en opnieuw beschreven kan worden, terwijl het is ingebouwd in elektrische apparatuur. Meestal kan dit proces zo'n 10.000 tot 20.000 maal herhaald worden. Moderne EEPROM's kunnen ten minste een miljoen maal gewist en beschreven worden. De retentietijd, dit is de tijd waarin gegevens opgeslagen kunnen blijven, is minstens 10 jaar. De naam "EEPROM" wordt vooral gebruikt voor kleinere geheugens waarvan de inhoud gewijzigd kan worden zonder eerst een gedeelte te hoeven wissen (alleen het gewijzigde deel wordt automatisch eerst gewist). Omdat de herschrijfbaarheid beperkt is (in tegenstelling tot statisch of dynamisch RAM-geheugen, zoals in pc's te vinden is), wordt bij de meeste toepassingen het geheugen in blokken opgedeeld. Een speciale controller houdt bij welke blokken het vaakst gebruikt zijn en verdeelt zo de te beschrijven data gelijkmatig over het beschikbare geheugen. Omdat elke schrijfactiviteit gepaard gaat met het wissen van een blok (een sector) is het schrijven van EEPROM-geheugen vaak een langzaam proces. De leesprestaties zijn daarentegen veelal uitstekend. Door massaproductie is EEPROM-geheugen tegenwoordig zo goedkoop geworden dat het nagenoeg alle andere vormen van ROM-geheugen verdrongen heeft. EEPROM wordt als een normaal IC in een gewone behuizing geproduceerd, maar daarnaast wordt de EEPROM-chip ook tezamen met andere chips in één behuizing geplaatst. Op deze manier worden qua functie in slechts één behuizing een complete microcomputer geïntegreerd, waarin zowel vluchtig als niet-vluchtig geheugen, I/O, interrupt, Direct Memory Access, een microprocessor en zelfs de oscillator aanwezig zijn. Zie ook Atmel AVR#EEPROM. EEPROM, E²PROM (od ang. electrically erasable programmable read-only memory), elektrycznie kasowalna i programowalna pamięć tylko do odczytu – rodzaj nieulotnej pamięci komputerowej. Pamięć EEPROM, w odróżnieniu od pamięci EPROM, może być kasowana i programowana tylko przy użyciu prądu elektrycznego. Liczba zapisów i kasowań jest ograniczona; w zależności od typu i producenta pamięci wynosi od 10 000 do 1 000 000 cykli. Po przekroczeniu tej wartości pamięć ulega uszkodzeniu. Liczba odczytów pamięci EEPROM jest natomiast nieograniczona. Stosowana jest do przechowywania małej ilości danych, które muszą być dostępne po zaniku zasilania. Rozwinięciem technologii pamięci EEPROM jest pamięć flash, w której ponadto dzięki zastosowaniu buforów zwiększono szybkość zapisu do pamięci. EEPROM (Electrically Erasable Programmable Read-Only Memory, ditulis pula dengan E2PROM) adalah sejenis chip memori tidak-terhapus yang digunakan dalam komputer dan peralatan elektronik lain untuk menyimpan sejumlah konfigurasi data pada alat elektronik tersebut yang tetap harus terjaga meskipun sumber daya diputuskan, seperti tabel kalibrasi atau kofigurasi perangkat. Pengembangan EEPROM lebih lanjut menghasilkan bentuk yang lebih spesifik, seperti memori kilat (flash memory). Memori kilat lebih ekonomis daripada perangkat EEPROM tradisional, sehingga banyak dipakai dalam perangkat keras yang mampu menyimpan data statik yang lebih banyak (seperti USB flash drive). Kelebihan utama dari EEPROM dibandingkan EPROM adalah ia dapat dihapus per blok data tergantung alamat yang diinginkan untuk dihapus secara elektrik. sementara EPROM tidak bisa dihapus per blok data tetapi keseluruhannya terhapus dan menghapus datanya dengan sinar ultraviolet.Jika RAM tidak memiliki batasan dalam hal baca-tulis memori, maka EEPROM sebaliknya. Beberapa jenis EEPROM keluaran pertama hanya dapat dihapus dan ditulis ulang (erase-rewrite) sebanyak 100 kali sedangkan model terbaru bisa sampai 100.000 kali. EEPROM（Electrically Erasable Programmable Read-Only Memory）は不揮発性メモリの一種。E2PROMとも表記される。コンピュータなどの電子機器において、設定情報など、電源を切っても保持すべきデータの記憶に用いられる。 USBメモリのように大量のデータを格納する用途では、従来型のEEPROMよりもその一種であるフラッシュメモリなどの方が経済的である。EEPROMはの配列でできている。 EEPROM (англ. Electrically Erasable Programmable Read-Only Memory) — постійний запам'ятовувач, що програмується та очищується за допомогою електрики, один з видів енергонезалежної пам'яті. Пам'ять такого типу може очищуватися та заповнюватися інформацією декілька десятків тисяч разів. Використовується в твердотільних накопичувачах. Одним з різновидів EEPROM є флеш-пам'ять (англ. Flash Memory). EEPROM (também escrita E2PROM, e pronunciada "e-e-prom"), sigla do inglês de Electrically-Erasable Programmable Read-Only Memory, é um tipo de memória não-volátil usada em computadores e outros dispositivos eletrônicos para armazenar pequenas quantidades de dados que precisam ser salvos quando a energia é removida, por exemplo, dados de configuração do dispositivo. Apesar de no nome se declarar Read-Only, esse foi classificado incorretamente, pois é tanto Read/Ler, quanto Write/Escrever, pelo fato de que códigos de erro no OBD-II poderem ser removidos independentemente, dentre outras características. Este se assemelha à denominação incorreta de ROM dos smartphones, conforme a Ciência da Computação. Ao contrário da maioria dos outros tipos de memória não-volátil, bytes individuais em uma EEPROM tradicional pode ser lidos, apagados e re-escrita de forma independente. Atualmente já existe uma memória não-volátil mais moderna, derivada da EEPROM, a memória flash. Quando grandes quantidades de dados estáticos devem ser armazenados (por exemplo, em unidades flash USB) a memória flash é mais econômica do que os dispositivos tradicionais de EEPROM. Enquanto uma EPROM é programada por um dispositivo eletrônico que dá tensões maiores do que os usados normalmente em circuitos elétricos e pode ser apagada apenas por exposição a uma forte luz ultravioleta, a EEPROM pode ser programada e apagada dentro do próprio circuito, eletricamente, pela aplicação de sinais de programação especiais. Originalmente, EEPROMs foram limitados a operações de byte único que os fizeram mais lento, mas EEPROMs modernos permitem operações com múltiplos bytes. Embora uma EEPROM possa ser lida, um número praticamente ilimitado de vezes, ela possui uma vida útil limitada - isto é, o número de vezes que pode ser reprogramada (apagada e programada novamente) foi limitado a dezenas ou centenas de milhares de vezes, devido a contínua deterioração interna do chip durante o processo de exclusão que requer uma tensão elétrica mais elevada. Essa limitação foi estendido para um milhão de operações de gravação em EEPROM modernos. Entretanto essa vida útil da EEPROM, se torna uma importante consideração a ser feita, quando seu uso em um computador, por exemplo, tenha uma previsão de frequentes reprogramações. É por esta razão que EEPROMs foram utilizados para informações de configuração, ao invés de memória de acesso aleatório. Como cada novo dado gravado no chip requer o apagamento do anterior, considera-se apagamento e gravação como uma só operação, porém seria possível gravar o mesmo endereço de memória um bit de cada vez, fazendo então oito gravações com um só prévio apagamento. Entretanto a maioria das memórias EEPROM faz o apagamento do conteúdo do endereço automaticamente antes da gravação. Tecnologias mais novas como FRAM e MRAM estão aos poucos substituindo as EEPROMs em algumas aplicações EEPROM o E²PROM, sigles de l'expressió anglesa electrically-erasable programmable read-only memory ("memòria ROM programable i esborrable elèctricament") és un tipus de memòria ROM que pot ser programada, esborrada i reprogramada elèctricament ౼a diferència de l'EPROM, que ha d'esborrar-se mitjançant un aparell que emet raigs ultraviolats౼. Són memòries no volàtils. Les cel·les de memòria d'una EEPROM estan constituïdes per un transistor MOS, que té una comporta flotant (estructura SAMOS), el seu estat normal aquesta tallat i la sortida proporciona un lògic. Encara que una EEPROM pot ser llegida un nombre il·limitat de vegades, "només" pot ser esborrada i reprogramada entre cent mil i un milió de vegades. Aquests dispositius solen comunicar-se mitjançant protocols com I²C, SPI i Microwire. En altres ocasions, s'integra dins de xips com microcontrolador és i DSPs per aconseguir una major rapidesa. La memòria flaix és una forma avançada d'EEPROM, creada pel Dr. Fujio Masuoka mentre treballava per Toshiba el 1984 i presentada a la Reunió d'Aparells Electrònics de la IEEE d'aquell mateix any. Intel va veure el potencial de la invenció, i el 1988 va llançar el primer xip comercial de tipus NOR. EEPROM (též E2PROM) je anglická zkratka pro Electrically Erasable Programmable Read-Only Memory (Elektricky Vymazatelná Paměť pouze pro čtení). Jedná se o elektricky mazatelnou (nevolatilní) paměť typu ROM-RAM. Paměť má typickou životnost 200 tisíc zápisů (ATMega16) což je řádově více než paměť typu flash, další výhodou pamětí EEPROM je vyšší životnost dat v nich uložených, Typická hodnota Data Retention je 20 let (ATMega16), což je opět řádově více než u pamětí typu flash. Hlavní nevýhodou je vyšší složitost paměťové buňky a s tím související nižší hustota a vyšší cena. Využití této paměti je jako úložiště (např. nastavení hlasitosti u TV) a obecně dat, která se mění častěji než je životnost paměti flash. EEPROM, E2PROM edo Electrically-Erasable Progammable Read Only (euskaraz: Irakurtzeko Bakarrik Memoria Elektrikoki Ezabagarri eta Programagarria) hainbat alditan grabatu eta ezabatu daitekeen ROM familiako memoria da. Informazioa ezabatzeko pultsu elektrikoak erabiltzen dira. EEPROM (англ. Electrically Erasable Programmable Read-Only Memory) — электрически стираемое перепрограммируемое ПЗУ (ЭСППЗУ), один из видов энергонезависимой памяти (таких, как PROM и EPROM). На сегодняшний день классическая двухтранзисторная технология EEPROM практически полностью вытеснена флеш-памятью типа NOR. Однако название EEPROM прочно закрепилось за сегментом памяти малой ёмкости независимо от технологии. EEPROM (Electrically Erasable Programmable Read-Only Memory, E2PROM, 문화어: 전기적지우기가능프로그램화읽기전용기억기)는 비휘발성 메모리(NVM)의 하나이다. 電子抹除式可複寫唯讀記憶體（英語：Electrically-Erasable Programmable Read-Only Memory，简称：EEPROM或E2PROM），是一種只读存储器（ROM），可以通過電子方式多次複寫。相比EPROM， EEPROM 不需要用紫外線照射，也不需取下，就可以用特定的電壓，來抹除芯片上的信息，以便寫入新的數據， EEPROM 屬於SPD（串行存在檢測）技術的一種延伸。 EEPROM分为四種工作模式：讀取模式、寫入模式、擦除模式、校驗模式。讀取時，芯片只需要Vcc低電壓（一般+5V）供電。而在編程寫入時，芯片会通過Vpp（一般+25V, 有时較新者會使用 +12V 或 +5V）獲得，並通過（一般為50ms）寫入數據。擦除時，只需使用，不需要紫外線照射，便可以擦除指定地址中的內容。為保證寫入正確，每寫入一塊數據後，都需要進行類似於讀取的校驗步驟，若錯誤就重新寫入。現今的 EEPROM 通常已不再需要使用額外的 Vpp 電壓，且寫入時間也已有縮短。在民用的DDR SDRAM及其主流後續產品中，一般 EEPROM 主要用於保存內存的開發者信息、生產時間、內存信息、通訊協議、、供電電壓、供電電流、物理訊息以及內存XMP等訊息，且電腦會在开机自檢（Power-On Self-Test；POST）時會讀取這些訊息以保持電腦的正常开机。快閃記憶體是EEPROM的後續延伸。 Οι μνήμες EEPROM είναι μία νεότερη εξέλιξη των μνήμων ROM. Οι μνήμες, σε αντίθεση με τις μνήμες RAM, διατηρούν τα περιεχόμενά τους και μετά την διακοπή της τροφοδοσίας τους. Μπορούν όμως να διαγραφούν και να επαναπρογραμματιστούν με νέες, ακόμη και πάνω στο κύκλωμα στο οποίο είναι τοποθετημένες. Αντίθετα οι προγενέστερές τους μνήμες για να διαγραφούν, έπρεπε να αφαιρεθούν από το κύκλωμα στο οποίο ήταν τοποθετημένες και να τοποθετηθούν σε ειδικές συσκευές, όπου η διαγραφή γινόταν με υπεριώδη ακτινοβολία. Για το λόγο αυτό υπήρχε και ειδικό παράθυρο πάνω στο ολοκληρωμένο, το οποίο και αύξανε το κόστος του ολοκληρωμένου.Οι μνήμες EEPROM μπορούν να προγραμματιστούν και να διαγραφούν αρκετές χιλιάδες, έως και μερικά εκατομμύρια φορές.Σε μνήμες EEPROM γράφονται σήμερα τα προγράμματα λειτουργίας (firmware) πολλών ηλεκτρονικών ή ηλεκτρικών συσκευών (π.χ κινητών τηλεφώνων, τηλεοράσεων, στερεοφωνικών συγκροτημάτων, εγκεφάλων αυτοκινήτων, πλυντηρίων, το BIOS των υπολογιστών κ.α.). Το γεγονός αυτό δίνει την δυνατότητα να γίνεται των προγραμμάτων αυτών με νεότερες εκδόσεις, που μπορεί να προσφέρουν επιπλέον λειτουργίες ή να αντιμετωπίζουν σφάλματα λειτουργίας των προγενέστερων.Το σημαντικό στις περιπτώσεις αυτές είναι, ότι την ενημέρωση αυτή μπορεί να την κάνει σε πολλές περιπτώσεις μόνος του ο τελικός χρήστης, χωρίς κανέναν ιδιαίτερο εξοπλισμό ή γνώσεις. Η διαδικασία αυτή δεν πρέπει να διακοπεί, διότι μπορεί η συσκευή να γίνει άχρηστη.Μια νεότερη και οι ιδιαίτερα χρήσιμη παραλλαγή τους είναι οι μνήμες Flash EEPROM, οι οποίες κατασκευάζονται με μεγαλύτερες χωρητικότητες και μπορούν να χρησιμοποιηθούν σε πολλές εφαρμογές αντί των σκληρών δίσκων. EEPROM (also called E2PROM) stands for electrically erasable programmable read-only memory and is a type of non-volatile memory used in computers, usually integrated in microcontrollers such as smart cards and remote keyless systems, or as a separate chip device to store relatively small amounts of data by allowing individual bytes to be erased and reprogrammed. EEPROMs are organized as arrays of floating-gate transistors. EEPROMs can be programmed and erased in-circuit, by applying special programming signals. Originally, EEPROMs were limited to single-byte operations, which made them slower, but modern EEPROMs allow multi-byte page operations. An EEPROM has a limited life for erasing and reprogramming, now reaching a million operations in modern EEPROMs. In an EEPROM that is frequently reprogrammed, the life of the EEPROM is an important design consideration. Flash memory is a type of EEPROM designed for high speed and high density, at the expense of large erase blocks (typically 512 bytes or larger) and limited number of write cycles (often 10,000). There is no clear boundary dividing the two, but the term "EEPROM" is generally used to describe non-volatile memory with small erase blocks (as small as one byte) and a long lifetime (typically 1,000,000 cycles). Many past microcontrollers included both (flash memory for the firmware and a small EEPROM for parameters), though the trend with modern microcontrollers is to emulate EEPROM using flash. As of 2020, flash memory costs much less than byte-programmable EEPROM and is the dominant memory type wherever a system requires a significant amount of non-volatile solid-state storage. EEPROMs, however, are still used on applications that only require small amounts of storage, like in serial presence detect. La mémoire EEPROM (Electrically-Erasable Programmable Read-Only Memory ou mémoire morte effaçable électriquement et programmable) (aussi appelée E2PROM ou E²PROM) est un type de mémoire morte. Une mémoire morte est une mémoire utilisée pour enregistrer des informations qui ne doivent pas être perdues lorsque l'appareil qui les contient n'est plus alimenté en électricité. EEPROM o E²PROM son las siglas de Electrically Erasable Programmable Read-Only Memory (ROM programable y borrable eléctricamente). Es un tipo de memoria ROM que puede ser programada, borrada y reprogramada eléctricamente, a diferencia de la EPROM que ha de borrarse mediante un aparato que emite rayos ultravioleta. Son memorias no volátiles. Las celdas de memoria de una EEPROM están constituidas por un transistor MOS, que tiene una compuerta flotante (estructura SAMOS), su estado normal está cortado y la salida proporciona un 1 lógico. Fueron inventadas por Lucio García Rompotis el 29 de Noviembre en el Instituto La Salle Florida mientras ese colaboraba en el proyecto del Desafío Eco YPF 2022. Aunque una EEPROM puede ser leída un número ilimitado de veces, sólo puede ser borrada y reprogramada entre 100.000 y un millón de veces. Estos dispositivos suelen comunicarse mediante protocolos como I²C, SPI y Microwire. En otras ocasiones, se integra dentro de chips como microcontroladores y DSPs para lograr una mayor rapidez. La memoria flash es una forma avanzada de EEPROM creada por el Dr. Fujio Masuoka mientras trabajaba para Toshiba en 1984 y fue presentada en la Reunión de Aparatos Electrónicos del IEEE de 1984. Intel vio el potencial de la invención y en 1988 lanzó el primer chip comercial de tipo NOR.
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