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- Die Polysiliziumverarmung ist ein physikalisches Phänomen, das in der Halbleitertechnik bei Feldeffekttransistoren, welche aus dem Gate-Material Polysilizium bestehen (vgl. Silizium-Gate-Technik), auftreten kann. Der Effekt kann und zu unerwünschten Schwankungen der Schwellenspannung einzelner Feldeffekttransistoren sowie einem unvorhersehbaren Verhalten der gesamten elektronischen Schaltung führen. (de)
- Polysilicon depletion effect is the phenomenon in which unwanted variation of threshold voltage of the MOSFET devices using polysilicon as gate material is observed, leading to unpredicted behavior of the electronic circuit. Because of this variation High-k Dielectric Metal Gates (HKMG) were introduced to solve the issue. Polycrystalline silicon, also called polysilicon, is a material consisting of small silicon crystals. The latter differs from mocrystalline silicon used for semiconductor electronics and solar cells, and from amorphous silicon, used for thin film devices and solar cells. (en)
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- Die Polysiliziumverarmung ist ein physikalisches Phänomen, das in der Halbleitertechnik bei Feldeffekttransistoren, welche aus dem Gate-Material Polysilizium bestehen (vgl. Silizium-Gate-Technik), auftreten kann. Der Effekt kann und zu unerwünschten Schwankungen der Schwellenspannung einzelner Feldeffekttransistoren sowie einem unvorhersehbaren Verhalten der gesamten elektronischen Schaltung führen. (de)
- Polysilicon depletion effect is the phenomenon in which unwanted variation of threshold voltage of the MOSFET devices using polysilicon as gate material is observed, leading to unpredicted behavior of the electronic circuit. Because of this variation High-k Dielectric Metal Gates (HKMG) were introduced to solve the issue. Polycrystalline silicon, also called polysilicon, is a material consisting of small silicon crystals. The latter differs from mocrystalline silicon used for semiconductor electronics and solar cells, and from amorphous silicon, used for thin film devices and solar cells. (en)
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- Polysiliziumverarmung (de)
- Polysilicon depletion effect (en)
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