About: Indium gallium aluminium nitride

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Indium gallium aluminium nitride (InGaAlN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as MOCVD, MBE, PLD, etc. This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs.

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  • Indium gallium aluminium nitride (InGaAlN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as MOCVD, MBE, PLD, etc. This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs. (en)
  • 氮化鋁銦鎵的化學式是InGaAlN，是以氮化鎵為基礎的半導體，常用磊晶成長的方式製成，像是有机金属化学气相沉积法（MOCVD）、分子束外延（MBE）、脉冲激光沉积（PLD）等方式。此材料用在特別的光電應用中，像是藍光雷射LED及藍光LED等。 (zh)
dbo:wikiPageID
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dbo:wikiPageLength
  • 946 (xsd:nonNegativeInteger)
dbo:wikiPageRevisionID
  • 1108762503 (xsd:integer)
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  • Indium gallium aluminium nitride (InGaAlN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as MOCVD, MBE, PLD, etc. This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs. (en)
  • 氮化鋁銦鎵的化學式是InGaAlN，是以氮化鎵為基礎的半導體，常用磊晶成長的方式製成，像是有机金属化学气相沉积法（MOCVD）、分子束外延（MBE）、脉冲激光沉积（PLD）等方式。此材料用在特別的光電應用中，像是藍光雷射LED及藍光LED等。 (zh)
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  • Indium gallium aluminium nitride (en)
  • 氮化鋁銦鎵 (zh)
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