http://dbpedia.org/data/Indium_gallium_aluminium_nitride.atom2024-03-28T09:12:58.474061ZOData Service and Descriptor Documenthttp://dbpedia.org/resource/Indium_gallium_aluminium_nitride2024-03-28T09:12:58.474061ZIndium gallium aluminium nitride (InGaAlN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as MOCVD, MBE, PLD, etc. This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs.13925557氮化鋁銦鎵946氮化鋁銦鎵的化學式是InGaAlN,是以氮化鎵為基礎的半導體,常用磊晶成長的方式製成,像是有机金属化学气相沉积法(MOCVD)、分子束外延(MBE)、脉冲激光沉积(PLD)等方式。此材料用在特別的光電應用中,像是藍光雷射LED及藍光LED等。Indium gallium aluminium nitride (InGaAlN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as MOCVD, MBE, PLD, etc. This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs.1108762503Indium gallium aluminium nitride氮化鋁銦鎵的化學式是InGaAlN,是以氮化鎵為基礎的半導體,常用磊晶成長的方式製成,像是有机金属化学气相沉积法(MOCVD)、分子束外延(MBE)、脉冲激光沉积(PLD)等方式。此材料用在特別的光電應用中,像是藍光雷射LED及藍光LED等。