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PrefixIRI
dctermshttp://purl.org/dc/terms/
yago-reshttp://yago-knowledge.org/resource/
dbohttp://dbpedia.org/ontology/
foafhttp://xmlns.com/foaf/0.1/
n9http://ta.dbpedia.org/resource/
n4https://global.dbpedia.org/id/
yagohttp://dbpedia.org/class/yago/
dbthttp://dbpedia.org/resource/Template:
rdfshttp://www.w3.org/2000/01/rdf-schema#
freebasehttp://rdf.freebase.com/ns/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
dbpedia-arhttp://ar.dbpedia.org/resource/
owlhttp://www.w3.org/2002/07/owl#
wikipedia-enhttp://en.wikipedia.org/wiki/
dbchttp://dbpedia.org/resource/Category:
dbphttp://dbpedia.org/property/
provhttp://www.w3.org/ns/prov#
xsdhhttp://www.w3.org/2001/XMLSchema#
wikidatahttp://www.wikidata.org/entity/
goldhttp://purl.org/linguistics/gold/
dbrhttp://dbpedia.org/resource/

Statements

Subject Item
dbr:Aluminium_indium_arsenide
rdf:type
dbo:ChemicalCompound yago:Abstraction100002137 yago:PhysicalEntity100001930 yago:WikicatIII-VCompounds yago:Idea105833840 yago:Cognition100023271 yago:PsychologicalFeature100023100 yago:Whole105869584 yago:Part113809207 yago:Matter100020827 yago:WikicatAluminiumCompounds yago:Concept105835747 yago:WikicatIndiumCompounds yago:Compound114818238 yago:WikicatSemiconductorMaterials yago:Arsenide114610443 yago:Compound105870180 owl:Thing yago:Material114580897 yago:Chemical114806838 yago:Content105809192 yago:WikicatArsenides yago:Relation100031921 yago:Substance100019613
rdfs:label
زرنيخيد الألومنيوم والإنديوم Aluminium indium arsenide
rdfs:comment
Aluminium indium arsenide, also indium aluminium arsenide or AlInAs (AlxIn1−xAs), is a semiconductor material with very nearly the same lattice constant as GaInAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between InAs and AlAs. The formula AlInAs should be considered an abbreviated form of the above, rather than any particular ratio. زرنيخيد الألومنيوم والإنديوم هي مادة نصف ناقلة لها الصيغة العامة (AlxIn(1-x) As) حيث تتراوح قيمة x بين 0 والـ 1، فالمركب بالتالي عن خليطة عشوائية من InAs وزرنيخيد الألومنيوم AlAs.
dcterms:subject
dbc:Indium_compounds dbc:Zincblende_crystal_structure dbc:Arsenides dbc:Aluminium_compounds dbc:III-V_semiconductors dbc:III-V_compounds
dbo:wikiPageID
5268837
dbo:wikiPageRevisionID
1027575853
dbo:wikiPageWikiLink
dbc:Zincblende_crystal_structure dbr:Gallium_indium_arsenide dbr:Indium dbr:Aluminium dbr:Trimethylindium dbr:Alloy dbr:MOVPE dbr:Quantum_well dbr:Indium_gallium_arsenide dbr:Bandgap dbc:Arsenides dbc:III-V_compounds dbc:III-V_semiconductors dbr:GaAs dbr:Indium_arsenide dbr:Aluminium_arsenide dbr:GaInAs dbr:Semiconductor_material dbc:Aluminium_compounds dbr:Lattice_constant dbr:Quantum_cascade_laser dbc:Indium_compounds dbr:Arsine dbr:HEMT dbr:Arsenic
owl:sameAs
n4:4PfYV n9:அலுமினியம்_இண்டியம்_ஆர்சனைடு freebase:m.0dbrqm dbpedia-ar:زرنيخيد_الألومنيوم_والإنديوم yago-res:Aluminium_indium_arsenide wikidata:Q4737390
dbp:wikiPageUsesTemplate
dbt:Aluminium_compounds dbt:Authority_control dbt:Arsenic_compounds dbt:Arsenides dbt:Indium_compounds
dbo:abstract
زرنيخيد الألومنيوم والإنديوم هي مادة نصف ناقلة لها الصيغة العامة (AlxIn(1-x) As) حيث تتراوح قيمة x بين 0 والـ 1، فالمركب بالتالي عن خليطة عشوائية من InAs وزرنيخيد الألومنيوم AlAs. Aluminium indium arsenide, also indium aluminium arsenide or AlInAs (AlxIn1−xAs), is a semiconductor material with very nearly the same lattice constant as GaInAs, but a larger bandgap. The x in the formula above is a number between 0 and 1 - this indicates an arbitrary alloy between InAs and AlAs. The formula AlInAs should be considered an abbreviated form of the above, rather than any particular ratio. Aluminium indium arsenide is used e.g. as a buffer layer in metamorphic HEMT transistors, where it serves to adjust the lattice constant differences between the GaAs substrate and the GaInAs channel. It can be also used to form alternate layers with indium gallium arsenide, which act as quantum wells; these structures are used in e.g. broadband quantum cascade lasers.
gold:hypernym
dbr:Material
prov:wasDerivedFrom
wikipedia-en:Aluminium_indium_arsenide?oldid=1027575853&ns=0
dbo:wikiPageLength
1992
foaf:isPrimaryTopicOf
wikipedia-en:Aluminium_indium_arsenide