Tunnel injection is a field electron emission effect; specifically a quantum process called Fowler–Nordheim tunneling, whereby charge carriers are injected to an electric conductor through a thin layer of an electric insulator. It is used to program NAND flash memory. The process used for erasing is called tunnel release. This injection is achieved by creating a large voltage difference between the gate and the body of the MOSFET. When VGB >> 0, electrons are injected into the floating gate. When VGB << 0, electrons are forced out of the floating gate.
Attributes | Values |
---|
rdf:type
| |
rdfs:label
| - 터널 주입 (ko)
- Tunnel injection (en)
|
rdfs:comment
| - 터널 주입(Tunnel injection)은 전하 운반자가 에 얇은 층의 절연체를 통과하여 주입될 때 양자 터널링 효과로 파울러-노르트하임 터널 주입이라고도 불린다. 그것은 NAND 플래시 메모리를 프로그램하는데 이용된다. 소거를 위한 과정은 라 불린다. (ko)
- Tunnel injection is a field electron emission effect; specifically a quantum process called Fowler–Nordheim tunneling, whereby charge carriers are injected to an electric conductor through a thin layer of an electric insulator. It is used to program NAND flash memory. The process used for erasing is called tunnel release. This injection is achieved by creating a large voltage difference between the gate and the body of the MOSFET. When VGB >> 0, electrons are injected into the floating gate. When VGB << 0, electrons are forced out of the floating gate. (en)
|
dcterms:subject
| |
Wikipage page ID
| |
Wikipage revision ID
| |
Link from a Wikipage to another Wikipage
| |
sameAs
| |
dbp:wikiPageUsesTemplate
| |
auto
| |
date
| |
has abstract
| - Tunnel injection is a field electron emission effect; specifically a quantum process called Fowler–Nordheim tunneling, whereby charge carriers are injected to an electric conductor through a thin layer of an electric insulator. It is used to program NAND flash memory. The process used for erasing is called tunnel release. This injection is achieved by creating a large voltage difference between the gate and the body of the MOSFET. When VGB >> 0, electrons are injected into the floating gate. When VGB << 0, electrons are forced out of the floating gate. An alternative to tunnel injection is the . (en)
- 터널 주입(Tunnel injection)은 전하 운반자가 에 얇은 층의 절연체를 통과하여 주입될 때 양자 터널링 효과로 파울러-노르트하임 터널 주입이라고도 불린다. 그것은 NAND 플래시 메모리를 프로그램하는데 이용된다. 소거를 위한 과정은 라 불린다. (ko)
|
gold:hypernym
| |
prov:wasDerivedFrom
| |
page length (characters) of wiki page
| |
foaf:isPrimaryTopicOf
| |
is Link from a Wikipage to another Wikipage
of | |
is Wikipage redirect
of | |
is foaf:primaryTopic
of | |