About: Tunnel injection

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Tunnel injection is a field electron emission effect; specifically a quantum process called Fowler–Nordheim tunneling, whereby charge carriers are injected to an electric conductor through a thin layer of an electric insulator. It is used to program NAND flash memory. The process used for erasing is called tunnel release. This injection is achieved by creating a large voltage difference between the gate and the body of the MOSFET. When VGB >> 0, electrons are injected into the floating gate. When VGB << 0, electrons are forced out of the floating gate.

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  • Tunnel injection is a field electron emission effect; specifically a quantum process called Fowler–Nordheim tunneling, whereby charge carriers are injected to an electric conductor through a thin layer of an electric insulator. It is used to program NAND flash memory. The process used for erasing is called tunnel release. This injection is achieved by creating a large voltage difference between the gate and the body of the MOSFET. When VGB >> 0, electrons are injected into the floating gate. When VGB << 0, electrons are forced out of the floating gate. An alternative to tunnel injection is the . (en)
  • 터널 주입(Tunnel injection)은 전하 운반자가 에 얇은 층의 절연체를 통과하여 주입될 때 양자 터널링 효과로 파울러-노르트하임 터널 주입이라고도 불린다. 그것은 NAND 플래시 메모리를 프로그램하는데 이용된다. 소거를 위한 과정은 라 불린다. (ko)
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  • 2973881 (xsd:integer)
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  • 1099248054 (xsd:integer)
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  • yes (en)
dbp:date
  • December 2009 (en)
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  • 터널 주입(Tunnel injection)은 전하 운반자가 에 얇은 층의 절연체를 통과하여 주입될 때 양자 터널링 효과로 파울러-노르트하임 터널 주입이라고도 불린다. 그것은 NAND 플래시 메모리를 프로그램하는데 이용된다. 소거를 위한 과정은 라 불린다. (ko)
  • Tunnel injection is a field electron emission effect; specifically a quantum process called Fowler–Nordheim tunneling, whereby charge carriers are injected to an electric conductor through a thin layer of an electric insulator. It is used to program NAND flash memory. The process used for erasing is called tunnel release. This injection is achieved by creating a large voltage difference between the gate and the body of the MOSFET. When VGB >> 0, electrons are injected into the floating gate. When VGB << 0, electrons are forced out of the floating gate. (en)
rdfs:label
  • 터널 주입 (ko)
  • Tunnel injection (en)
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