About: Power MOSFET

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A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to a degree that the gate voltage needs to be higher than the voltage under control.

Attributes	Values
rdf:type	Thing yago:WikicatTransistors yago:WikicatSolidStateSwitches yago:Artifact100021939 yago:Conductor103088707 yago:Control103096960 yago:Device103183080 yago:Instrumentality103575240 yago:Mechanism103738472 yago:Object100002684 yago:PhysicalEntity100001930 yago:SemiconductorDevice104171831 yago:Switch104372370 yago:Transistor104471632 yago:Whole100003553
rdfs:label	موسفت عالي الاستطاعة (ar) MOSFET de potència (ca) Leistungs-MOSFET (de) MOSFET di potenza (it) パワーMOSFET (ja) 전력 MOSFET (ko) Power MOSFET (en) 功率MOSFET (zh)
rdfs:comment	パワーMOSFET（英: Power MOSFET）は、大電力を取り扱うように設計されたMOSFETのこと。他のパワーデバイスと比較するとスイッチング速度が速く、低電圧領域での変換効率が高い為、200V以下の領域で、スイッチング電源や、等に用いられる。 (ja) 전력 모스펫(Power MOSFET)은 큰 전력을 처리하기 위해 설계된 금속 산화막 반도체 전계효과 트랜지스터 (MOSFET)의 특정 종류이다. 다른 전력 반도체 소자 (절연 게이트 양극성 트랜지스터 (IGBT), 사이리스터들에 비해 주요한 장점은 낮은 전압에서 통신 속도가 빠르고 효율이 좋다는 것이다. 이것은 절연 게이트 양극성 트랜지스터(IGBT)의 격리된 게이트와 공유되어 신호인가를 쉽게 한다. 이것은 시모스 기술이 발전함에 따라 제조가 가능했으며 1970년대 후반에 집적회로 제조가 개발되었다. 전력 모스펫은 저전력 중 하나인 측면 모스펫의 동작법칙을 공유한다. 전력 모스펫은 저전력 (대충 200 V 이하) 스위치로 가장 널리 사용된다. 이것은 대부분의 전원 공급장치, , 저전압 에서 찾아볼 수 있다. (ko) 功率MOSFET是專門處理大功率的電壓和電流的金屬氧化物半導體場效電晶體（MOSFET），也是的一種。和其他功率半導體（例如絕緣柵雙極晶體管或晶閘管）比較，功率MOSFET的優點是其切換速度快，在低電壓下的高效率。功率MOSFET和IGBT都有隔離的閘體，因此在驅動上比較容易。功率MOSFET的缺點是增益較小，有時閘極驅動的電壓甚至比實際要控制的電壓還低。 MOSFET及互補式金屬氧化物半導體（CMOS）技術持續的演進，自1960年起已用在集成电路上，這也是功率MOSFET的設計得以實現的原因。功率MOSFET和一般信號級的MOSFET原理相同。功率MOSFET常用在电力电子学，是源自信號級的MOSFET，自1970年代開始有商品販售。功率MOSFET是最常見的，原因是因為其閘極驅動需要的功率小、以及快速的切換速度、容易實施的並聯技術、高頻寬、堅固性、偏壓簡單、容易使用、也容易維修。在低壓（200V以下）的應用中，功率MOSFET是最常見的功率半導體。功率MOSFET可以用在許多不同的領域中，包括大部份的電源供應器、直流-直流轉換器、低電壓电机控制器等，以及。 (zh) موسفت عالي الاستطاعة هو نوع محدد من ترانزستور التأثير الميداني لأكسيد المعادن وأشباه الموصلات المصممة للتعامل مع مستويات طاقة كبيرة. مقارنة بأجهزة أشباه موصلات الطاقة الأخرى، مثل بوابة الترانزستور ثنائي القطب المعزولة (IGBT) أو الثايرستور فإن مزاياه الرئيسية هي سرعة التبديل العالية وسرعة جيدة الكفاءة في الفولتية المنخفضة. تشترك مع IGBT في بوابة معزولة تجعل من السهل القيادة. يمكن أن تكون عرضة لمكاسب منخفضة، لدرجة أن جهد البوابة يحتاج أحيانًا إلى أن يكون أعلى من الجهد تحت السيطرة. (ar) Ein Leistungs-MOSFET (englisch power MOSFET, power metal oxide semiconductor field-effect transistor) ist eine spezialisierte Version eines Metall-Oxid-Halbleiter-Feldeffekttransistors (MOSFET), der für das Leiten und Sperren von großen elektrischen Strömen und Spannungen optimiert ist (bis mehrere hundert Ampere und bis ca. 1000 Volt, bei einem Bauteilvolumen von etwa einem Kubikzentimeter). (de) A power MOSFET is a specific type of metal–oxide–semiconductor field-effect transistor (MOSFET) designed to handle significant power levels. Compared to the other power semiconductor devices, such as an insulated-gate bipolar transistor (IGBT) or a thyristor, its main advantages are high switching speed and good efficiency at low voltages. It shares with the IGBT an isolated gate that makes it easy to drive. They can be subject to low gain, sometimes to a degree that the gate voltage needs to be higher than the voltage under control. (en) In elettronica, il MOSFET di potenza è usato nelle applicazioni ad alti valori di tensione e corrente. Rispetto agli altri dispositivi di potenza a semiconduttore (IGBT, Tiristori,...) i suoi principali vantaggi sono l'elevata velocità di commutazione e la buona efficienza a basse tensioni; come l'IGBT possiede un gate isolato che lo rende semplice da pilotare. (it)
rdfs:seeAlso	LDMOS MOSFET
name	Power MOSFET (en)
foaf:depiction
dcterms:subject	Solid state switches Power electronics MOSFETs Japanese inventions
Wikipage page ID	2659918 (xsd:integer)
Wikipage revision ID	1103994258 (xsd:integer)
Link from a Wikipage to another Wikipage	Capacitor Ampere Amplifier Power electronics Electromigration Electron mobility Electronic oscillator Bell Labs Dawon Kahng Hitachi Permittivity Renesas Electronics Charge carrier DC-to-DC converter VMOS Depletion region Doping (semiconductor) Insulated-gate bipolar transistor Integrated circuit JFET LDMOS Power semiconductor device Electronics Solid state switches STMicroelectronics Gate driver Electrical resistivity Electron Epitaxy GE Oil and Gas Mohamed M. Atalla MOSFET Stanford University Joule heating Public address system Analogue switch List of car manufacturers of the United Kingdom Buck converter Power electronics Tohoku University Toshiba Transportation Datasheet HP Labs DMOS Junction temperature Latch-up TO-263 3G

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