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About: Indium nitride     Goto   Sponge   NotDistinct   Permalink

An Entity of Type : umbel-rc:ChemicalSubstanceType, within Data Space : dbpedia.org associated with source document(s)

Type: Thingdul:ChemicalObjectchemical substanceChemical compoundyago:WikicatNitridesyago:WikicatSemiconductorMaterialsyago:Abstraction100002137yago:Chemical114806838yago:Cognition100023271yago:Compound105870180yago:Compound114818238yago:Concept105835747yago:Content105809192yago:Idea105833840yago:Material114580897yago:Matter100020827yago:Nitride114963317yago:Part113809207yago:PhysicalEntity100001930yago:PsychologicalFeature100023100yago:Relation100031921yago:WikicatIII-VCompoundsyago:WikicatIndiumCompoundschemical compoundyago:Substance100019613yago:Whole105869584umbel-rc:ChemicalSubstanceType New Facet based on Instances of this Class

Indium nitride (InN) is a small bandgap semiconductor material which has potential application in solar cells and high speed electronics. The bandgap of InN has now been established as ~0.7 eV depending on temperature (the obsolete value is 1.97 eV). The effective electron mass has been recently determined by high magnetic field measurements, m* =0.055 m0. Alloyed with GaN, the ternary system InGaN has a direct bandgap span from the infrared (0.69 eV) to the ultraviolet (3.4 eV). Thin layers of InN can be grown using metalorganic chemical vapour deposition (MOCVD).