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Indium arsenide antimonide phosphide (InAsSbP) is a semiconductor material. InAsSbP has been widely used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes, photodetectors and thermophotovoltaic cells.

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  • Indium arsenide antimonide phosphide
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  • Indium arsenide antimonide phosphide (InAsSbP) is a semiconductor material. InAsSbP has been widely used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes, photodetectors and thermophotovoltaic cells.
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  • Indium arsenide antimonide phosphide (InAsSbP) is a semiconductor material. InAsSbP has been widely used as blocking layers for semiconductor laser structures, as well as for the mid-infrared light-emitting diodes, photodetectors and thermophotovoltaic cells. InAsSbP layers can be grown by heteroepitaxy on indium arsenide, gallium antimonide and other materials. The vibrational properties of the alloy have been investigated by Raman spectroscopy. The alloy was subject to many theoretical investigations to study the effect of pressure on its optoelectronic properties, mechanical properties and phonon vibrations.
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