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A multiple-emitter transistor is a specialized bipolar transistor mostly used at the inputs of integrated circuit TTL NAND logic gates. Input signals are applied to the emitters. The voltage presented to the following stage is pulled low if any one or more of the base–emitter junctions is forward biased, allowing logical operations to be performed using a single transistor. Multiple-emitter transistors replace the diodes of diode–transistor logic (DTL) to make transistor–transistor logic (TTL), and thereby allow reduction of switching time and power dissipation.

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  • Multiemitter-Transistor (de)
  • Multiple-emitter transistor (en)
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  • Der Multiemitter-Transistor stellt eine besondere Form von Bipolartransistor dar. Er verfügt über einen Basis- (B) und einen Kollektoranschluss (C), aber im Unterschied zu herkömmlichen Bipolartransistoren weist er mehrere Emitteranschlüsse (E1,…,En) auf. Schaltungstechnisch stellt er eine Parallelschaltung mehrerer herkömmlicher Bipolartransistoren dar, deren Basis- bzw. Kollektoranschlüsse zu je einem Anschluss zusammengefasst sind und deren Emitteranschlüsse separat verfügbar sind. (de)
  • A multiple-emitter transistor is a specialized bipolar transistor mostly used at the inputs of integrated circuit TTL NAND logic gates. Input signals are applied to the emitters. The voltage presented to the following stage is pulled low if any one or more of the base–emitter junctions is forward biased, allowing logical operations to be performed using a single transistor. Multiple-emitter transistors replace the diodes of diode–transistor logic (DTL) to make transistor–transistor logic (TTL), and thereby allow reduction of switching time and power dissipation. (en)
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  • http://commons.wikimedia.org/wiki/Special:FilePath/Multiple-emitter_transistor.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/Simple_bipolar_transistor.png
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  • Der Multiemitter-Transistor stellt eine besondere Form von Bipolartransistor dar. Er verfügt über einen Basis- (B) und einen Kollektoranschluss (C), aber im Unterschied zu herkömmlichen Bipolartransistoren weist er mehrere Emitteranschlüsse (E1,…,En) auf. Schaltungstechnisch stellt er eine Parallelschaltung mehrerer herkömmlicher Bipolartransistoren dar, deren Basis- bzw. Kollektoranschlüsse zu je einem Anschluss zusammengefasst sind und deren Emitteranschlüsse separat verfügbar sind. (de)
  • A multiple-emitter transistor is a specialized bipolar transistor mostly used at the inputs of integrated circuit TTL NAND logic gates. Input signals are applied to the emitters. The voltage presented to the following stage is pulled low if any one or more of the base–emitter junctions is forward biased, allowing logical operations to be performed using a single transistor. Multiple-emitter transistors replace the diodes of diode–transistor logic (DTL) to make transistor–transistor logic (TTL), and thereby allow reduction of switching time and power dissipation. Logic gate use of multiple-emitter transistors was patented in 1961 in the UK and in the US in 1962. (en)
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