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32 nanômetros 32纳米制程 32 nm 32 nanòmetres 32 nanómetros 32 nm process 32 nanometrů 32 nm 32 nm 공정
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The 32 nm node is the step following the 45 nm process in CMOS (MOSFET) semiconductor device fabrication. "32-nanometre" refers to the average half-pitch (i.e., half the distance between identical features) of a memory cell at this technology level. Toshiba produced commercial 32 GiB NAND flash memory chips with the 32 nm process in 2009. Intel and AMD produced commercial microchips using the 32-nanometre process in the early 2010s. IBM and the also developed a 32 nm high-κ metal gate process. Intel began selling its first 32 nm processors using the Westmere architecture on 7 January 2010. 32 nanòmetres (32 nm) és una tecnologia de fabricació de semiconductors en què els components tenen una dimensió de 32 nm. És una millora de la tecnologia de 45 nm. La llei de Moore diu que la superfície és redueix a la meitat cada 2 anys, per tant el costat del quadrat de la nova tecnologia serà de . Sabent que els àtoms de silici tenen una distància entre ells de 0,543 nm, llavors el transistor té de l'ordre de 59 àtoms de llargada. 32 nm(나노미터) 공정은 회로선 폭이 32 nm인 반도체를 다루는 CMOS 이다. Il processo costruttivo a 32 nm (32 nanometri) è l'evoluzione del processo a 45 nm utilizzato per i microprocessori Intel, AMD e IBM (oltre che per altri tipi di circuiti realizzati da altre società del settore) e la sua introduzione è avvenuta nel 2009. Il termine "32 nm" indica la dimensione minima del gate di ogni singolo transistor. Per avere un'idea di cosa voglia dire "32 nm" basti considerare che il virus dell'HIV è grande circa 120 nm, un globulo rosso umano circa 6000-8000 nm e lo spessore di un capello quasi 80000 nm. 32纳米制程是半导体制造制程的一个水平。自2010年开始，英特尔和AMD开始制造32纳米的芯片产品。 32纳米的后继制程是22纳米。 32 nanómetros (32nm) es la tecnología de fabricación de semiconductores, en la que los componentes están fabricados en una 32 milmillonésima parte de un metro.​ 32 nanometrů (zkráceně 32 nm) je technologie výroby polovodičových součástek typu CMOS. Označení "32 nanometrů" odkazuje na typickou poloviční rozteč (poloviční vzdálenost mezi identickými strukturami v poli) jedné paměťové buňky v počítačové paměti. Mikroprocesory s technologií 32 nm začaly být produkovány v roce 2010. Technologie 32 nm byla překonána 22 nm technologií v roce 2012. 32 nm désigne le procédé de fabrication des semi-conducteurs qui succède au procédé 45 nm de fabrication par CMOS. Les premiers processeurs possédant cette technologie sont apparus sur le marché en 2010. Les processeurs Intel Westmere Nehalem sont gravés en 32 nm. Selon la feuille de route de l'ITRS le successeur du 32 nm est la technologie 22 nm.
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The 32 nm node is the step following the 45 nm process in CMOS (MOSFET) semiconductor device fabrication. "32-nanometre" refers to the average half-pitch (i.e., half the distance between identical features) of a memory cell at this technology level. Toshiba produced commercial 32 GiB NAND flash memory chips with the 32 nm process in 2009. Intel and AMD produced commercial microchips using the 32-nanometre process in the early 2010s. IBM and the also developed a 32 nm high-κ metal gate process. Intel began selling its first 32 nm processors using the Westmere architecture on 7 January 2010. The 28-nanometre node was an intermediate half-node die shrink based on the 32-nanometre process. The 32 nm process was superseded by commercial 22 nm technology in 2012. Il processo costruttivo a 32 nm (32 nanometri) è l'evoluzione del processo a 45 nm utilizzato per i microprocessori Intel, AMD e IBM (oltre che per altri tipi di circuiti realizzati da altre società del settore) e la sua introduzione è avvenuta nel 2009. Il termine "32 nm" indica la dimensione minima del gate di ogni singolo transistor. Per avere un'idea di cosa voglia dire "32 nm" basti considerare che il virus dell'HIV è grande circa 120 nm, un globulo rosso umano circa 6000-8000 nm e lo spessore di un capello quasi 80000 nm. I vantaggi nel passare a questo processo costruttivo e, più in generale, a cercare di migliorare sempre più la miniaturizzazione, sono molteplici: si va dal miglioramento della resa produttiva con conseguente abbattimento di costi (più un processore è "piccolo" e più processori possono essere fabbricati con un solo wafer), alla diminuzione del consumo elettrico, passando per la possibilità di integrare un numero di transistor sempre maggiore con conseguente aumento della potenza elaborativa. Il successore di questo processo utilizza una larghezza di canale di 22 nm. 32 nm désigne le procédé de fabrication des semi-conducteurs qui succède au procédé 45 nm de fabrication par CMOS. Les premiers processeurs possédant cette technologie sont apparus sur le marché en 2010. Les processeurs Intel Westmere Nehalem sont gravés en 32 nm. Selon la feuille de route de l'ITRS le successeur du 32 nm est la technologie 22 nm. 32纳米制程是半导体制造制程的一个水平。自2010年开始，英特尔和AMD开始制造32纳米的芯片产品。 32纳米的后继制程是22纳米。 32 nanòmetres (32 nm) és una tecnologia de fabricació de semiconductors en què els components tenen una dimensió de 32 nm. És una millora de la tecnologia de 45 nm. La llei de Moore diu que la superfície és redueix a la meitat cada 2 anys, per tant el costat del quadrat de la nova tecnologia serà de . Sabent que els àtoms de silici tenen una distància entre ells de 0,543 nm, llavors el transistor té de l'ordre de 59 àtoms de llargada. 32 nanometrů (zkráceně 32 nm) je technologie výroby polovodičových součástek typu CMOS. Označení "32 nanometrů" odkazuje na typickou poloviční rozteč (poloviční vzdálenost mezi identickými strukturami v poli) jedné paměťové buňky v počítačové paměti. Mikroprocesory s technologií 32 nm začaly být produkovány v roce 2010. Technologie 32 nm byla překonána 22 nm technologií v roce 2012. 32 nanómetros (32nm) es la tecnología de fabricación de semiconductores, en la que los componentes están fabricados en una 32 milmillonésima parte de un metro.​ 32 nm(나노미터) 공정은 회로선 폭이 32 nm인 반도체를 다루는 CMOS 이다.
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