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Stranski–Krastanov growth Механизм роста Странского — Крыстанова Stranski-Krastanovモード 斯特兰斯基－克拉斯坦诺夫生长
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斯特兰斯基－克拉斯坦诺夫生长簡稱S-K生長，是薄膜在結晶表面磊晶成長的三種主要模式之一。此生長機制包含兩個過程：首先在基板上吸附成薄膜並開始層狀累積，達到臨界厚度時，會因應力和化學能導致薄膜轉變為島狀成長模式 。S-K生長最早由伊万·斯特兰斯基和Lyubomir Krastanov在1938年發現。直到1958年，S-K生長模式、Volmer-Weber生長模式和Frank–van der Merwe生長模式才被恩斯特·鮑爾（Ernst Bauer）在他的著作中正式歸類為薄膜成長的三大主要機制。 Механизм роста Странского — Крыстанова (англ. Stranski-Krastanov growth mode), также известный как механизм послойного-плюс-островкового роста — один из трёх основных механизмов роста тонких плёнок; описывает случай, когда рост начинается как двумерный (послойный), а затем меняется на трёхмерный (островковый). Назван в честь болгарских физикохимиков Ивана Странского и Любомира Крыстанова. Stranski–Krastanov growth (SK growth, also Stransky–Krastanov or 'Stranski–Krastanow') is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. Also known as 'layer-plus-island growth', the SK mode follows a two step process: initially, complete films of adsorbates, up to several monolayers thick, grow in a layer-by-layer fashion on a crystal substrate. Beyond a critical layer thickness, which depends on strain and the chemical potential of the deposited film, growth continues through the nucleation and coalescence of adsorbate 'islands'. This growth mechanism was first noted by Ivan Stranski and Lyubomir Krastanov in 1938. It wasn't until 1958 however, in a seminal work by Ernst Bauer published in Zeitschrift für Kristallographie, that the Stranski-Krastanov Growth Mode（S-K成長モード）は結晶成長において2次元膜構造が3次元的島状構造に変化する事である。 下地結晶と異なる格子定数を持つ材料を成長させる時、その格子不整合度が1.7%以上の時には成長層は歪みを持ち、系全体のエネルギーが大きくなる。成長膜厚を増やすほど系の持つ歪みエネルギーは増大し、ある臨界膜厚を超えたところでS-K成長モードが起こり、膜が島状構造に変化する。 特に分子線エピタキシー法 (MBE) や有機金属気相成長法 (MOCVD, MOVPE) といった結晶成長において量子ドットを始めとする半導体微細構造を作製するのに用いられている。
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Figure 2. SK growth showing island formation after obtaining a critical thickness, . Lines represent lattice planes with thicker lines for the substrate lattice and thinner lines for the growing film. Edge dislocations are highlighted in red at the film/island interface. Figure 3. Coherent island formation under SK growth. Local curvature of the near surface region surrounding the island leads to elastic deformation of the island and wetting layer thereby reducing the accumulated strain. These islands are defect free.
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Stranski–Krastanov growth (SK growth, also Stransky–Krastanov or 'Stranski–Krastanow') is one of the three primary modes by which thin films grow epitaxially at a crystal surface or interface. Also known as 'layer-plus-island growth', the SK mode follows a two step process: initially, complete films of adsorbates, up to several monolayers thick, grow in a layer-by-layer fashion on a crystal substrate. Beyond a critical layer thickness, which depends on strain and the chemical potential of the deposited film, growth continues through the nucleation and coalescence of adsorbate 'islands'. This growth mechanism was first noted by Ivan Stranski and Lyubomir Krastanov in 1938. It wasn't until 1958 however, in a seminal work by Ernst Bauer published in Zeitschrift für Kristallographie, that the SK, Volmer–Weber, and Frank–van der Merwe mechanisms were systematically classified as the primary thin-film growth processes. Since then, SK growth has been the subject of intense investigation, not only to better understand the complex thermodynamics and kinetics at the core of thin-film formation, but also as a route to fabricating novel nanostructures for application in the microelectronics industry. Stranski-Krastanov Growth Mode（S-K成長モード）は結晶成長において2次元膜構造が3次元的島状構造に変化する事である。 下地結晶と異なる格子定数を持つ材料を成長させる時、その格子不整合度が1.7%以上の時には成長層は歪みを持ち、系全体のエネルギーが大きくなる。成長膜厚を増やすほど系の持つ歪みエネルギーは増大し、ある臨界膜厚を超えたところでS-K成長モードが起こり、膜が島状構造に変化する。 特に分子線エピタキシー法 (MBE) や有機金属気相成長法 (MOCVD, MOVPE) といった結晶成長において量子ドットを始めとする半導体微細構造を作製するのに用いられている。 斯特兰斯基－克拉斯坦诺夫生长簡稱S-K生長，是薄膜在結晶表面磊晶成長的三種主要模式之一。此生長機制包含兩個過程：首先在基板上吸附成薄膜並開始層狀累積，達到臨界厚度時，會因應力和化學能導致薄膜轉變為島狀成長模式 。S-K生長最早由伊万·斯特兰斯基和Lyubomir Krastanov在1938年發現。直到1958年，S-K生長模式、Volmer-Weber生長模式和Frank–van der Merwe生長模式才被恩斯特·鮑爾（Ernst Bauer）在他的著作中正式歸類為薄膜成長的三大主要機制。 Механизм роста Странского — Крыстанова (англ. Stranski-Krastanov growth mode), также известный как механизм послойного-плюс-островкового роста — один из трёх основных механизмов роста тонких плёнок; описывает случай, когда рост начинается как двумерный (послойный), а затем меняется на трёхмерный (островковый). Назван в честь болгарских физикохимиков Ивана Странского и Любомира Крыстанова.
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