About: Process variation (semiconductor)

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Process variation is the naturally occurring variation in the attributes of transistors (length, widths, oxide thickness) when integrated circuits are fabricated. The amount of process variation becomes particularly pronounced at smaller process nodes (<65 nm) as the variation becomes a larger percentage of the full length or width of the device and as feature sizes approach the fundamental dimensions such as the size of atoms and the wavelength of usable light for patterning lithography masks.

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  • Process variation is the naturally occurring variation in the attributes of transistors (length, widths, oxide thickness) when integrated circuits are fabricated. The amount of process variation becomes particularly pronounced at smaller process nodes (<65 nm) as the variation becomes a larger percentage of the full length or width of the device and as feature sizes approach the fundamental dimensions such as the size of atoms and the wavelength of usable light for patterning lithography masks. Process variation causes measurable and predictable variance in the output performance of all circuits but particularly analog circuits due to mismatch. If the variance causes the measured or simulated performance of a particular output metric (bandwidth, gain, rise time, etc.) to fall below or rise above the specification for the particular circuit or device, it reduces the overall yield for that set of devices. (en)
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  • Process variation is the naturally occurring variation in the attributes of transistors (length, widths, oxide thickness) when integrated circuits are fabricated. The amount of process variation becomes particularly pronounced at smaller process nodes (<65 nm) as the variation becomes a larger percentage of the full length or width of the device and as feature sizes approach the fundamental dimensions such as the size of atoms and the wavelength of usable light for patterning lithography masks. (en)
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  • Process variation (semiconductor) (en)
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