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Indium(III) selenide is a compound of indium and selenium. It has potential for use in photovoltaic devices and it has been the subject of extensive research. The two most common phases, α and β, have a layered structure, while γ is a "defect wurtzite structure." In all, there are five known forms (α, β, γ, δ, κ). The α- β phase transition is accompanied by a change in electrical conductivity. The band-gap of γ-In2Se3 is approximately 1.9 eV.The crystalline form of a sample can depend on the method of production, for example thin films of pure γ-In2Se3 have been produced from trimethylindium, InMe3, and hydrogen selenide, H2Se, using MOCVD techniques. Indium selenide has been shown to have excellent electronic properties in its two-dimensional (few-layer) form. Because of its air sensitivi

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  • سيلينيد إنديوم ثلاثي مركب كيميائي له الصيغة In2Se3 ، ويكون على شكل بلورات سوداء، وهي مادة نصف ناقلة تتألف من السيلينيوم والإنديوم. (ar)
  • Indium(III)-selenid ist eine Verbindung aus Indium und Selen. Durch ihre photovoltaischen Eigenschaften ist die Verbindung Gegenstand intensiver Forschung. (de)
  • Indium(III) selenide is a compound of indium and selenium. It has potential for use in photovoltaic devices and it has been the subject of extensive research. The two most common phases, α and β, have a layered structure, while γ is a "defect wurtzite structure." In all, there are five known forms (α, β, γ, δ, κ). The α- β phase transition is accompanied by a change in electrical conductivity. The band-gap of γ-In2Se3 is approximately 1.9 eV.The crystalline form of a sample can depend on the method of production, for example thin films of pure γ-In2Se3 have been produced from trimethylindium, InMe3, and hydrogen selenide, H2Se, using MOCVD techniques. Indium selenide has been shown to have excellent electronic properties in its two-dimensional (few-layer) form. Because of its air sensitivity, several processes have been developed to encapsulate the material for the integration in electronic devices. (en)
  • Le séléniure d'indium(III) est un composé chimique de formule In2Se3. Il se présente sous la forme d'un solide gris argenté à noir, assez mou, facilement soluble dans les acides forts. On en connaît cinq phases notées α, β, γ, δ et κ dont les plus courantes sont les phases α et β, qui ont une structure lamellaire, tandis que la phase γ présente une structure cristalline wurtzite déficiente en indium. Cette dernière revêt un intérêt comme semiconducteur pour composants photovoltaïques, avec une largeur de bande interdite d'environ 1,9 eV. La forme cristalline dépend de la méthode de croissance. Ainsi, des couches minces d'In2Se3 pur de structure γ ont été obtenues par épitaxie en phase vapeur aux organométalliques (MOCVD) à partir de triméthylindium In(CH3)3 et de séléniure d'hydrogène H2Se. Le séléniure d'indium bidimensionnel, c'est-à-dire n'ayant que quelques couches atomiques d'épaisseur, présente d'excellentes propriétés électroniques. Sa sensibilité à l'air a conduit au développement de plusieurs techniques pour l'encapsuler afin de permettre son intégration aux composants électroniques. (fr)
  • Il seleniuro di indio(III) è un composto di indio e selenio. Ha un utilizzo potenziale nei dispositivi fotovoltaici ed è stato oggetto di un'estesa ricerca. Le due forme più comuni α- e β- hanno il difetto delle strutture della wurtzite, tuttavia esistono cinque forme conosciute (α, β, γ, δ, κ) La transizione di fase α- β è accompagnata da un cambiamento della conduzione metallica. La banda proibita (band-gap) del γ-In2Se3 è approssimativamente 1,9 eV. La forma cristallina di un campione può dipendere dal metodo di produzione, per esempio le pellicole sottili di puro γ-In2Se3 sono state prodotte dal , InMe3, e seleniuro di idrogeno, H2Se, usando tecniche MOCVD (metalorganic chemical vapour deposition) (it)
  • Селенид индия(III) — бинарное неорганическое соединениеиндия и селена с формулой In2Se3 (соль селеноводородной кислоты),чёрные кристаллы. (ru)
  • 硒化铟是铟的一种硒化物。它有潜力用于光伏器件,并且得到了广泛的研究。硒化铟的两种最常见的晶型——α型和β型,有着层状结构,而γ型具有缺陷的。至今,一共发现了硒化铟的五种相态(α、β、γ、δ、κ)。 伴随着电导率的变化,会产生α- β 相态的相变。γ-In2Se3 的能隙大约为 1.9 eV。硒化铟的晶体结构取决于制备方法,例如γ-In2Se3 可以由三甲基铟(InMe3)和硒化氢(H2Se)通过有机金属化学气相沉积法制备而成。 (zh)
dbo:alternativeName
  • indium selenide, indium sesquiselenide (en)
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  • Indium(III) selenide (en)
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  • Indium selenide (en)
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  • indium selenide, indium sesquiselenide (en)
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  • changed (en)
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  • سيلينيد إنديوم ثلاثي مركب كيميائي له الصيغة In2Se3 ، ويكون على شكل بلورات سوداء، وهي مادة نصف ناقلة تتألف من السيلينيوم والإنديوم. (ar)
  • Indium(III)-selenid ist eine Verbindung aus Indium und Selen. Durch ihre photovoltaischen Eigenschaften ist die Verbindung Gegenstand intensiver Forschung. (de)
  • Селенид индия(III) — бинарное неорганическое соединениеиндия и селена с формулой In2Se3 (соль селеноводородной кислоты),чёрные кристаллы. (ru)
  • 硒化铟是铟的一种硒化物。它有潜力用于光伏器件,并且得到了广泛的研究。硒化铟的两种最常见的晶型——α型和β型,有着层状结构,而γ型具有缺陷的。至今,一共发现了硒化铟的五种相态(α、β、γ、δ、κ)。 伴随着电导率的变化,会产生α- β 相态的相变。γ-In2Se3 的能隙大约为 1.9 eV。硒化铟的晶体结构取决于制备方法,例如γ-In2Se3 可以由三甲基铟(InMe3)和硒化氢(H2Se)通过有机金属化学气相沉积法制备而成。 (zh)
  • Indium(III) selenide is a compound of indium and selenium. It has potential for use in photovoltaic devices and it has been the subject of extensive research. The two most common phases, α and β, have a layered structure, while γ is a "defect wurtzite structure." In all, there are five known forms (α, β, γ, δ, κ). The α- β phase transition is accompanied by a change in electrical conductivity. The band-gap of γ-In2Se3 is approximately 1.9 eV.The crystalline form of a sample can depend on the method of production, for example thin films of pure γ-In2Se3 have been produced from trimethylindium, InMe3, and hydrogen selenide, H2Se, using MOCVD techniques. Indium selenide has been shown to have excellent electronic properties in its two-dimensional (few-layer) form. Because of its air sensitivi (en)
  • Le séléniure d'indium(III) est un composé chimique de formule In2Se3. Il se présente sous la forme d'un solide gris argenté à noir, assez mou, facilement soluble dans les acides forts. On en connaît cinq phases notées α, β, γ, δ et κ dont les plus courantes sont les phases α et β, qui ont une structure lamellaire, tandis que la phase γ présente une structure cristalline wurtzite déficiente en indium. Cette dernière revêt un intérêt comme semiconducteur pour composants photovoltaïques, avec une largeur de bande interdite d'environ 1,9 eV. (fr)
  • Il seleniuro di indio(III) è un composto di indio e selenio. Ha un utilizzo potenziale nei dispositivi fotovoltaici ed è stato oggetto di un'estesa ricerca. Le due forme più comuni α- e β- hanno il difetto delle strutture della wurtzite, tuttavia esistono cinque forme conosciute (α, β, γ, δ, κ) La transizione di fase α- β è accompagnata da un cambiamento della conduzione metallica. La banda proibita (band-gap) del γ-In2Se3 è approssimativamente 1,9 eV. (it)
rdfs:label
  • سيلينيد إنديوم ثلاثي (ar)
  • Indium(III)-selenid (de)
  • Séléniure d'indium(III) (fr)
  • Indium(III) selenide (en)
  • Seleniuro di indio(III) (it)
  • Селенид индия(III) (ru)
  • 硒化铟 (zh)
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