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- Ballistic electron emission microscopy or BEEM is a technique for studying ballistic electron transport through a variety of materials and material interfaces. BEEM is a three terminal scanning tunneling microscopy (STM) technique that was invented in 1988 at the Jet Propulsion Laboratory in Pasadena, California by L. Douglas Bell and William Kaiser. The most popular interfaces to study are metal-semiconductor Schottky diodes, but metal-insulator-semiconductor systems can be studied as well. When performing BEEM, electrons are injected from a STM tip into a grounded metal base of a Schottky diode. A small fraction of these electrons will travel ballistically through the metal to the metal-semiconductor interface where they will encounter a Schottky barrier. Those electrons with sufficient energy to surmount the Schottky barrier will be detected as the BEEM current. The atomic scale positioning capability of the STM tip gives BEEM nanometer spatial resolution. In addition, the narrow energy distribution of electrons tunneling from the STM tip gives BEEM a high energetic resolution (about 0.02 eV). (en)
- Die ballistische Elektronenemissionsmikroskopie (kurz BEEM) ist eine Abwandlung der Rastertunnelmikroskopie, sie wurde 1988 durch L. Douglas Bell and William J. Kaiser entwickelt. Mit Hilfe von BEEM lässt sich die Schottky-Barriere an der Grenzfläche eines Metalls zu einem Halbleiter mit einer Nanometer-hohen lateralen Auflösung untersuchen. (de)
- 弾道電子放出顕微鏡（だんどうでんしほうしゅつけんびきょう、Ballistic Electron Emission Microscopy : BEEM）とは弾道電子により画像を得る走査型トンネル顕微鏡の一種。 (ja)
- Microscopia por emissão balística de elétrons (BEEM) é uma forma modificada de um microscópio de tunelamento de varredura (STM) que permite o estudo em nanoescala de transporte de portador de não equilíbrio através de interfaces aterradas. A diferença da configuração STM normal é a adição de um contato de volta para a amostra. Isto torna possível recolher os elétrons injetados que percorreram o dispositivo completo. (pt)
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- Die ballistische Elektronenemissionsmikroskopie (kurz BEEM) ist eine Abwandlung der Rastertunnelmikroskopie, sie wurde 1988 durch L. Douglas Bell and William J. Kaiser entwickelt. Mit Hilfe von BEEM lässt sich die Schottky-Barriere an der Grenzfläche eines Metalls zu einem Halbleiter mit einer Nanometer-hohen lateralen Auflösung untersuchen. (de)
- 弾道電子放出顕微鏡（だんどうでんしほうしゅつけんびきょう、Ballistic Electron Emission Microscopy : BEEM）とは弾道電子により画像を得る走査型トンネル顕微鏡の一種。 (ja)
- Microscopia por emissão balística de elétrons (BEEM) é uma forma modificada de um microscópio de tunelamento de varredura (STM) que permite o estudo em nanoescala de transporte de portador de não equilíbrio através de interfaces aterradas. A diferença da configuração STM normal é a adição de um contato de volta para a amostra. Isto torna possível recolher os elétrons injetados que percorreram o dispositivo completo. (pt)
- Ballistic electron emission microscopy or BEEM is a technique for studying ballistic electron transport through a variety of materials and material interfaces. BEEM is a three terminal scanning tunneling microscopy (STM) technique that was invented in 1988 at the Jet Propulsion Laboratory in Pasadena, California by L. Douglas Bell and William Kaiser. The most popular interfaces to study are metal-semiconductor Schottky diodes, but metal-insulator-semiconductor systems can be studied as well. (en)
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- Ballistische Elektronenemissionsmikroskopie (de)
- Ballistic electron emission microscopy (en)
- 弾道電子放出顕微鏡 (ja)
- Microscopia por emissão balística de elétrons (pt)
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