@prefix rdf: . @prefix dbr: . @prefix yago: . dbr:Gallium_arsenide rdf:type yago:Relation100031921 , yago:WikicatGalliumCompounds , yago:WikicatArsenicCompounds , yago:WikicatArsenides , yago:Conductor114821043 , yago:WikicatIII-VCompounds . @prefix dbo: . dbr:Gallium_arsenide rdf:type dbo:ChemicalCompound , yago:Part113809207 , yago:Content105809192 . @prefix wikidata: . dbr:Gallium_arsenide rdf:type wikidata:Q11173 , yago:WikicatLight-emittingDiodeMaterials . @prefix umbel-rc: . dbr:Gallium_arsenide rdf:type umbel-rc:ChemicalSubstanceType , yago:Matter100020827 , yago:Concept105835747 , yago:InorganicCompound114919511 , yago:Arsenide114610443 , yago:Semiconductor114821248 , yago:WikicatInorganicCompounds , yago:Abstraction100002137 . @prefix ns6: . dbr:Gallium_arsenide rdf:type ns6:ChemicalObject , yago:WikicatCompoundSemiconductors , dbo:ChemicalSubstance , yago:Material114580897 . @prefix owl: . dbr:Gallium_arsenide rdf:type owl:Thing , yago:Chemical114806838 , yago:WikicatSemiconductorMaterials , yago:WikicatSemiconductors , yago:Compound114818238 , yago:Compound105870180 , yago:Whole105869584 , yago:Idea105833840 , yago:PsychologicalFeature100023100 , yago:PhysicalEntity100001930 , yago:Cognition100023271 , yago:Substance100019613 . @prefix rdfs: . dbr:Gallium_arsenide rdfs:label "Galliumarsenid"@sv , "Arseniuro di gallio"@it , "Arseniuro de galio"@es , "Gallium arsenide"@en , "\uBE44\uC18C\uD654 \uAC08\uB968"@ko , "\u0410\u0440\u0441\u0435\u043D\u0438\u0434 \u0433\u0430\u043B\u043B\u0438\u044F"@ru , "Arsenur de gal\u00B7li"@ca , "Ars\u00E9niure de gallium"@fr , "\u0410\u0440\u0441\u0435\u043D\u0456\u0434 \u0433\u0430\u043B\u0456\u044E"@uk , "Arsana\u00EDd ghailliam"@ga , "\u7837\u5316\u93B5"@zh , "Arsenid gallit\u00FD"@cs , "Galliumarsenide"@nl , "Arsenieto de g\u00E1lio"@pt , "Galium arsenida"@in , "Arsenek galu"@pl , "\u0632\u0631\u0646\u064A\u062E\u064A\u062F \u0627\u0644\u063A\u0627\u0644\u064A\u0648\u0645"@ar , "Galliumarsenid"@de , "\u30D2\u5316\u30AC\u30EA\u30A6\u30E0"@ja ; rdfs:comment "Galliumarsenide (GaAs) is een anorganische verbinding tussen gallium en arseen. Het is een belangrijke halfgeleider met toepassingen in leds en zonnecellen. Vanwege zijn hoge kunnen elektronen erg snel van het ene naar het andere atoom overspringen. Hierom wordt galliumarsenide veel toegepast in ge\u00EFntegreerde schakelingen waarbij hoge frequenties (tot meer dan 250 GHz) gebruikt worden."@nl , "\uBE44\uC18C\uD654 \uAC08\uB968(Gallium arsenide, GaAs) \uB610\uB294 \uAC08\uB968\uBE44\uC18C\uB294 \uAC08\uB968\uACFC \uBE44\uC18C\uB85C \uAD6C\uC131\uB41C \uD654\uD569\uBB3C\uC774\uB2E4. GaAs \uD0DC\uC591\uC804\uC9C0\uB294 \uD0DC\uC591\uC5D0\uB108\uC9C0\uB97C \uC804\uAE30\uB85C \uBC14\uAFD4\uC8FC\uB294 \uAD11\uBCC0\uD658 \uD6A8\uC728\uC774 40%\uB85C\uC11C, \uC2E4\uB9AC\uCF58 \uD0DC\uC591\uC804\uC9C0(16%)\uBCF4\uB2E4 \uB450 \uBC30 \uC774\uC0C1 \uD6A8\uC728\uC774 \uB192\uB2E4. 1980\uB144\uB300 \uCD08\uBC18\uC5D0 \uAC08\uB968\uBE44\uC18C \uD0DC\uC591\uC804\uC9C0\uC758 \uD6A8\uC728\uC774 \uC2E4\uB9AC\uCF58 \uD0DC\uC591\uC804\uC9C0 \uD6A8\uC728\uC744 \uCC98\uC74C\uC73C\uB85C \uB6F0\uC5B4\uB118\uC5C8\uACE0, 1990\uB144\uB300 \uC774\uB974\uB7EC\uC11C\uB294 \uC778\uACF5\uC704\uC131\uC5D0 \uC4F0\uC774\uB294 \uAC12\uC2FC \uC2E4\uB9AC\uCF58 \uD0DC\uC591\uC804\uC9C0\uB97C \uAC12\uBE44\uC2FC \uAC08\uB968\uBE44\uC18C \uD0DC\uC591\uC804\uC9C0\uB85C \uB300\uCCB4\uD558\uC600\uB2E4. \uAC08\uB968\uBE44\uC18C \uD0DC\uC591\uC804\uC9C0\uB294 \uC2E4\uB9AC\uCF58 \uD0DC\uC591\uC804\uC9C0\uBCF4\uB2E4 \uD6E8\uC52C \uC791\uAC8C \uB9CC\uB4E4 \uC218 \uC788\uACE0 \uC6D0\uC7AC\uB8CC \uC0AC\uC6A9\uB7C9\uB3C4 \uD68D\uAE30\uC801\uC73C\uB85C \uC904\uC77C \uC218 \uC788\uB2E4. \uAC08\uB968\uBE44\uC18C\uB294 \uC2E4\uB9AC\uCF58\uC5D0 \uBE44\uD574 \uC2E0\uD638\uCC98\uB9AC \uC18D\uB3C4\uAC00 6\uBC30\uAC00\uB7C9 \uBE60\uB974\uACE0 \uC804\uB825 \uC18C\uBAA8\uB7C9\uC740 3\uBD84\uC758 1 \uC218\uC900\uC774\uC9C0\uB9CC, \uAC00\uACA9\uC740 \uC2E4\uB9AC\uCF58 \uC6E8\uC774\uD37C\uC5D0 \uBE44\uD574 15\uBC30\uAC00\uB7C9 \uB192\uB2E4. \uC544\uC774\uD3F0 \uB4F1 \uD604\uC7AC\uC758 \uC2A4\uB9C8\uD2B8\uD3F0\uC740 \uB300\uADDC\uBAA8\uC9D1\uC801\uD68C\uB85C(LSI), \uAC08\uB968\uBE44\uC18C(GaAs) \uBC18\uB3C4\uCCB4, \uB9AC\uD2AC\uC774\uC628 \uBC30\uD130\uB9AC\uAC00 \uC5C6\uC5C8\uB2E4\uBA74 \uBD88\uAC00\uB2A5\uD55C \uC81C\uD488\uC774\uB2E4."@ko , "Arsenieto de g\u00E1lio \u00E9 composto qu\u00EDmico sint\u00E9tico, de f\u00F3rmula m\u00EDnima GaAs. \u00C9 material semicondutor de interesse da ind\u00FAstria eletr\u00F4nica/inform\u00E1tica, muito utilizado na constru\u00E7\u00E3o de circuitos integrados."@pt , "Gallium(III)arsenid, galliumarsenid (ofta f\u00F6rkortat GaAs) \u00E4r en f\u00F6rening av grund\u00E4mnena gallium (kemisk beteckning 'Ga') och arsenik (kemisk beteckning 'As'). Den \u00E4r en viktig halvledare och anv\u00E4nds f\u00F6r att tillverka integrerade kretsar som arbetar i mikrov\u00E5gsfrekvenser (flera GHz), infrar\u00F6da lysdioder, laserdioder och solceller."@sv , "\u0410\u0440\u0441\u0435\u043D\u0456\u0301\u0434 \u0433\u0430\u0301\u043B\u0456\u044E (GaAs) \u2014 \u043A\u0440\u0438\u0441\u0442\u0430\u043B\u0456\u0447\u043D\u0430 \u0440\u0435\u0447\u043E\u0432\u0438\u043D\u0430 \u0456\u0437 \u043A\u0440\u0438\u0441\u0442\u0430\u043B\u0456\u0447\u043D\u043E\u044E \u0491\u0440\u0430\u0442\u043A\u043E\u044E \u0442\u0438\u043F\u0443 \u0446\u0438\u043D\u043A\u043E\u0432\u0430 \u043E\u0431\u043C\u0430\u043D\u043A\u0430. \u041F\u0440\u044F\u043C\u043E\u0437\u043E\u043D\u043D\u0438\u0439 \u043D\u0430\u043F\u0456\u0432\u043F\u0440\u043E\u0432\u0456\u0434\u043D\u0438\u043A \u0456\u0437 \u0448\u0438\u0440\u0438\u043D\u043E\u044E \u0437\u0430\u0431\u043E\u0440\u043E\u043D\u0435\u043D\u043E\u0457 \u0437\u043E\u043D\u0438 1,424 \u0435\u0412. \u0428\u0438\u0440\u043E\u043A\u043E \u0432\u0438\u043A\u043E\u0440\u0438\u0441\u0442\u043E\u0432\u0443\u0454\u0442\u044C\u0441\u044F \u0434\u043B\u044F \u0441\u0442\u0432\u043E\u0440\u0435\u043D\u043D\u044F \u043D\u0430\u043F\u0456\u0432\u043F\u0440\u043E\u0432\u0456\u0434\u043D\u0438\u043A\u043E\u0432\u0438\u0445 \u043F\u0440\u0438\u0441\u0442\u0440\u043E\u0457\u0432, \u0431\u0430\u0433\u0430\u0442\u043E\u0448\u0430\u0440\u043E\u0432\u0438\u0445 \u0441\u0442\u0440\u0443\u043A\u0442\u0443\u0440, \u043A\u0432\u0430\u043D\u0442\u043E\u0432\u0438\u0445 \u0442\u043E\u0447\u043E\u043A, \u0434\u0440\u043E\u0442\u0438\u043D \u0439 \u044F\u043C. \u041D\u0430\u043B\u0435\u0436\u0438\u0442\u044C \u0434\u043E \u043A\u043B\u0430\u0441\u0443 \u0456\u043D\u0442\u0435\u0440\u043C\u0435\u0442\u0430\u043B\u0456\u0447\u043D\u0438\u0445 \u0441\u043F\u043E\u043B\u0443\u043A \u0435\u043B\u0435\u043C\u0435\u043D\u0442\u0456\u0432 \u0406\u0406\u0406 \u0456 V \u0433\u0440\u0443\u043F \u043F\u0435\u0440\u0456\u043E\u0434\u0438\u0447\u043D\u043E\u0457 \u0441\u0438\u0441\u0442\u0435\u043C\u0438 \u0435\u043B\u0435\u043C\u0435\u043D\u0442\u0456\u0432, \u0441\u043A\u043E\u0440\u043E\u0447\u0435\u043D\u043E \u2014 \u0441\u043F\u043E\u043B\u0443\u043A\u0438 AIIIBV (\u0430\u043D\u0433\u043B. III-V Compounds)."@uk , "Die bin\u00E4re Verbindung Galliumarsenid (GaAs) ist ein Halbleiterwerkstoff, der sowohl halbleitend (mit Elementen aus den Gruppen II, IV oder VI des Periodensystems dotiert) als auch semiisolierend (undotiert) sein kann. Die auf diesem Substratmaterial aufbauenden Verbindungen und Epitaxie-Schichten werden zur Herstellung elektronischer Bauelemente ben\u00F6tigt, die bei Hochfrequenzanwendungen und f\u00FCr die Umwandlung elektrischer in optische Signale eingesetzt werden."@de , "Galium arsenida (GaAs) adalah senyawa dari unsur-unsur galium dan arsenik. Ini adalah semikonduktor dengan struktur kristal seng blende. Galium arsenida digunakan dalam pembuatan perangkat seperti sirkuit terintegrasi frekuensi gelombang , , dioda pemancar cahaya inframerah, dioda laser, sel surya dan jendela optik. GaAs sering digunakan sebagai bahan substrat untuk pertumbuhan epitaksial semikonduktor III-V lainnya, termasuk , dan lain-lain."@in , "L'arseniuro di gallio \u00E8 un composto chimico inorganico. \u00C8 un semiconduttore composto dalla combinazione degli elementi chimici arsenico e gallio. La sua formula chimica \u00E8 GaAs. \u00C8 caratterizzato da un'alta mobilit\u00E0 elettrica dei portatori liberi di carica (elettroni e lacune) e da una banda di energia proibita diretta, per cui trova applicazioni nei dispositivi elettronici ad altissima velocit\u00E0 e nei dispositivi emettitori di luce (componenti per microonde, diodi LED e laser, componenti per lettori DVD e per radar automobilistici), nonch\u00E9 nelle celle fotovoltaiche."@it , "\u7837\u5316\u93B5\uFF08\u5316\u5B78\u5F0F\uFF1AGaAs\uFF09\u662F\u93B5\u548C\u7837\u5169\u7A2E\u5143\u7D20\u6240\u5408\u6210\u7684\u5316\u5408\u7269\uFF0C\u4E5F\u662F\u91CD\u8981\u7684IIIA\u65CF\u3001VA\u65CF\u5316\u5408\u7269\u534A\u5BFC\u4F53\u6750\u6599\uFF0C\u7528\u4F86\u88FD\u4F5C\u5FAE\u6CE2\u7A4D\u9AD4\u96FB\u8DEF\u3001\u7D05\u5916\u7DDA\u767C\u5149\u4E8C\u6975\u9AD4\u3001\u534A\u5BFC\u4F53\u6FC0\u5149\u5668\u548C\u592A\u967D\u96FB\u6C60\u7B49\u5143\u4EF6\u3002 GaAs\u5316\u5408\u7269\u534A\u5BFC\u4F53\u7279\u522B\u9002\u5408\u5E94\u7528\u4E8E\u65E0\u7EBF\u901A\u4FE1\u4E2D\u7684\u9AD8\u9891\u4F20\u8F93\u9886\u57DF\uFF0C\u73B0\u5728\u8D8A\u6765\u8D8A\u591A\u88AB\u5E94\u7528\u4E8E\u5C04\u9891\u524D\u7AEF\u5668\u4EF6\uFF0C\u8FD9\u662F\u56E0\u4E3AGaAs\u5316\u5408\u7269\u534A\u5BFC\u4F53\u7535\u5B50\u8FC1\u79FB\u7387\u6BD4\u4F20\u7EDF\u7684\u7845\u5FEB\uFF0C\u4E14\u5177\u6709\u6297\u5E72\u6270\u3001\u4F4E\u566A\u58F0\u4E0E\u8010\u9AD8\u7535\u538B\u3001\u8010\u9AD8\u6E29\u4E0E\u9AD8\u9891\u4F7F\u7528\u7B49\u7279\u6027\uFF0C\u57284G\u4E0E5G\u65F6\u4EE3\u6709\u9AD8\u5EA6\u9700\u6C42\u3002"@zh , "GaAs, \u00E1bhar leathsheolt\u00F3ra a \u00FAs\u00E1idtear i dtrasraitheoir\u00ED, cealla gr\u00E9ine is l\u00E9asair leathsheolt\u00F3ra (ach nach n-\u00FAs\u00E1idtear in aon chor chomh minic le sileacan chuige seo). Cos\u00FAil le sileacan, agus d\u00E9antar \u00ED a dh\u00F3p\u00E1il chun a sheoltacht leictreach a mhodhn\u00FA mar is g\u00E1. Gluaiseann leictreoin i bhfad n\u00EDos tapa ann n\u00E1 i sileacan, agus is cinnte go mbainfear feidhm i bhfad n\u00EDos m\u00F3 aisti as seo amach. Bunt\u00E1iste eile ag GaAs thar Si is ea go dtraiseolann s\u00E9 solas, rud a bheidh an-t\u00E1bhachtach sna slisn\u00ED ina mbeidh f\u00F3t\u00F3in mar iompr\u00F3ir\u00ED sonra\u00ED in ionad leictreon."@ga , "Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others."@en , "\u30D2\u5316\u30AC\u30EA\u30A6\u30E0\uFF08\u30D2\u304B\u30AC\u30EA\u30A6\u30E0\u3001gallium arsenide\uFF09\u306F\u30AC\u30EA\u30A6\u30E0\u306E\u30D2\u5316\u7269\u3067\u3042\u308A\u3001\u7D44\u6210\u5F0F\u306FGaAs\u3067\u3042\u308B\u3002\u5316\u5408\u7269\u534A\u5C0E\u4F53\u3067\u3042\u308B\u305F\u3081\u3001\u305D\u306E\u6027\u8CEA\u3092\u5229\u7528\u3057\u3066\u534A\u5C0E\u4F53\u7D20\u5B50\u306E\u6750\u6599\u3068\u3057\u3066\u591A\u7528\u3055\u308C\u3066\u3044\u308B\u3002\u534A\u5C0E\u4F53\u5206\u91CE\u3067\u306F\u30AC\u30EA\u30A6\u30E0\u30D2\u7D20\uFF08\u30AC\u30EA\u30A6\u30E0\u7812\u7D20\uFF09\u3084\u3001\u3055\u3089\u306B\u306F\u305D\u308C\u3092\u77ED\u7E2E\u3057\u305F\u30AC\u30EA\u30D2\u7D20\u3068\u3044\u3046\u547C\u79F0\u3067\u547C\u3070\u308C\u308B\u3053\u3068\u3082\u591A\u3044\u3002"@ja , "L'arsenur de gal\u00B7li (GaAs) \u00E9s un compost de gal\u00B7li i ars\u00E8nic. \u00C9s un important semiconductor i es fa servir per fabricar dispositius com circuits integrats a freq\u00FC\u00E8ncies de microones, d\u00EDodes d'emissi\u00F3 infraroja, d\u00EDodes l\u00E0ser i c\u00E8l\u00B7lules fotovoltaiques."@ca , "L'ars\u00E9niure de gallium est un compos\u00E9 chimique de formule brute GaAs appartenant \u00E0 la famille des semiconducteurs III-V. C'est un mat\u00E9riau semi-conducteur \u00E0 gap direct pr\u00E9sentant une structure cristalline cubique de type sphal\u00E9rite (blende). L'ars\u00E9niure de gallium est couramment utilis\u00E9 comme substrat pour la croissance \u00E9pitaxiale d'autres III-V tels que l'ars\u00E9niure d'indium-gallium InxGa1\u2212xAs et l'ars\u00E9niure d'aluminium-gallium AlxGa1\u2212xAs."@fr , "\u0632\u0631\u0646\u064A\u062E\u064A\u062F \u0627\u0644\u063A\u0627\u0644\u064A\u0648\u0645 \u0645\u0631\u0643\u0628 \u0643\u064A\u0645\u064A\u0627\u0626\u064A \u0644\u0647 \u0627\u0644\u0635\u064A\u063A\u0629 GaAs \u060C \u0648\u064A\u0643\u0648\u0646 \u0639\u0644\u0649 \u0634\u0643\u0644 \u0628\u0644\u0648\u0631\u0627\u062A \u0631\u0645\u0627\u062F\u064A\u0629. \u0632\u0631\u0646\u064A\u062E\u064A\u062F \u0627\u0644\u063A\u0627\u0644\u064A\u0648\u0645 (GaAs) \u0647\u0648 \u0645\u0631\u0643\u0628 \u0645\u0646 \u0639\u0646\u0627\u0635\u0631 \u0627\u0644\u063A\u0627\u0644\u064A\u0648\u0645 \u0648\u0627\u0644\u0632\u0631\u0646\u064A\u062E. \u0648\u0647\u0648 \u0639\u0628\u0627\u0631\u0629 \u0639\u0646 \u0623\u0634\u0628\u0627\u0647 \u0645\u0648\u0635\u0644\u0627\u062A \u0630\u0627\u062A \u0641\u062C\u0648\u0629 III-V \u0645\u0628\u0627\u0634\u0631\u0629 \u0645\u0639 \u0628\u0646\u064A\u0629 \u0628\u0644\u0648\u0631\u064A\u0629 \u0645\u0646 \u0627\u0644\u0632\u0646\u0643. \u064A\u0633\u062A\u062E\u062F\u0645 \u0632\u0631\u0646\u064A\u062E \u0627\u0644\u063A\u0627\u0644\u064A\u0648\u0645 \u0641\u064A \u062A\u0635\u0646\u064A\u0639 \u0627\u0644\u0623\u062C\u0647\u0632\u0629 \u0645\u062B\u0644 \u0627\u0644\u062F\u0648\u0627\u0626\u0631 \u0627\u0644\u0645\u062A\u0643\u0627\u0645\u0644\u0629 \u0627\u0644\u062A\u0631\u062F\u062F \u0627\u0644\u0645\u064A\u0643\u0631\u0648\u0648\u064A\u0641\u060C \u0627\u0644\u062F\u0648\u0627\u0626\u0631 \u0627\u0644\u0645\u062A\u0643\u0627\u0645\u0644\u0629 \u0627\u0644\u0645\u064A\u0643\u0631\u0648\u0648\u064A\u0641 \u0645\u062A\u062D\u062F\u0629\u060C \u0627\u0644\u062B\u0646\u0627\u0626\u064A\u0627\u062A \u0627\u0644\u0628\u0627\u0639\u062B\u0629 \u0644\u0644\u0636\u0648\u0621 \u0627\u0644\u0623\u0634\u0639\u0629 \u062A\u062D\u062A \u0627\u0644\u062D\u0645\u0631\u0627\u0621\u060C \u0627\u0644\u062B\u0646\u0627\u0626\u064A\u0627\u062A \u0627\u0644\u0644\u064A\u0632\u0631 \u0648\u0627\u0644\u062E\u0644\u0627\u064A\u0627 \u0627\u0644\u0634\u0645\u0633\u064A\u0629 \u0648\u0627\u0644\u0646\u0648\u0627\u0641\u0630 \u0627\u0644\u0628\u0635\u0631\u064A\u0629. \u063A\u0627\u0644\u0628\u064B\u0627 \u0645\u0627 \u064A\u062A\u0645 \u0627\u0633\u062A\u062E\u062F\u0627\u0645 GaAs \u0643\u0645\u0648\u0627\u062F \u0623\u0633\u0627\u0633\u064A\u0629 \u0644\u0644\u0646\u0645\u0648 \u0627\u0644\u0641\u0648\u0642\u064A \u0644\u0623\u0634\u0628\u0627\u0647 \u0627\u0644\u0645\u0648\u0635\u0644\u0627\u062A III-V \u0627\u0644\u0623\u062E\u0631\u0649 \u0628\u0645\u0627 \u0641\u064A \u0630\u0644\u0643 \u0632\u0631\u0646\u064A\u062E\u064A\u062F \u0627\u0644\u063A\u0627\u0644\u064A\u0648\u0645 \u0627\u0644\u0625\u0646\u062F\u064A\u0648\u0645 \u0648\u0623\u0631\u0633\u064A\u0646\u064A\u062F \u0627\u0644\u0623\u0644\u0648\u0645\u0646\u064A\u0648\u0645 \u0627\u0644\u063A\u0627\u0644\u064A\u0648\u0645 \u0648\u063A\u064A\u0631\u0647\u0627."@ar , "Arsenid gallit\u00FD (tak\u00E9 arsenid gallia), chemick\u00FD vzorec GaAs, je slou\u010Denina gallia a arsenu. Je to v\u00FDznamn\u00FD polovodi\u010D, pou\u017E\u00EDvan\u00FD p\u0159i v\u00FDrob\u011B integrovan\u00FDch obvod\u016F pracuj\u00EDc\u00EDch v oboru mikrovln, infra\u010Derven\u00FDch a polovodi\u010Dov\u00FDch laser\u016F a fotovoltaick\u00FDch \u010Dl\u00E1nk\u016F."@cs , "El Arseniuro de galio (GaAs) es un compuesto de galio y ars\u00E9nico. Es un importante semiconductor y se usa para fabricar dispositivos como circuitos integrados a frecuencias de microondas, diodos de emisi\u00F3n infrarroja, diodos l\u00E1ser y c\u00E9lulas fotovoltaicas."@es , "\u0410\u0440\u0441\u0435\u043D\u0438\u0301\u0434 \u0433\u0430\u0301\u043B\u043B\u0438\u044F (GaAs) \u2014 \u0445\u0438\u043C\u0438\u0447\u0435\u0441\u043A\u043E\u0435 \u0441\u043E\u0435\u0434\u0438\u043D\u0435\u043D\u0438\u0435 \u0433\u0430\u043B\u043B\u0438\u044F \u0438 \u043C\u044B\u0448\u044C\u044F\u043A\u0430. \u0412\u0430\u0436\u043D\u044B\u0439 \u043F\u043E\u043B\u0443\u043F\u0440\u043E\u0432\u043E\u0434\u043D\u0438\u043A, \u0442\u0440\u0435\u0442\u0438\u0439 \u043F\u043E \u043C\u0430\u0441\u0448\u0442\u0430\u0431\u0430\u043C \u0438\u0441\u043F\u043E\u043B\u044C\u0437\u043E\u0432\u0430\u043D\u0438\u044F \u0432 \u043F\u0440\u043E\u043C\u044B\u0448\u043B\u0435\u043D\u043D\u043E\u0441\u0442\u0438 \u043F\u043E\u0441\u043B\u0435 \u043A\u0440\u0435\u043C\u043D\u0438\u044F \u0438 \u0433\u0435\u0440\u043C\u0430\u043D\u0438\u044F. \u0418\u0441\u043F\u043E\u043B\u044C\u0437\u0443\u0435\u0442\u0441\u044F \u0434\u043B\u044F \u0441\u043E\u0437\u0434\u0430\u043D\u0438\u044F \u0441\u0432\u0435\u0440\u0445\u0432\u044B\u0441\u043E\u043A\u043E\u0447\u0430\u0441\u0442\u043E\u0442\u043D\u044B\u0445 \u0438\u043D\u0442\u0435\u0433\u0440\u0430\u043B\u044C\u043D\u044B\u0445 \u0441\u0445\u0435\u043C \u0438 \u0442\u0440\u0430\u043D\u0437\u0438\u0441\u0442\u043E\u0440\u043E\u0432, \u0441\u0432\u0435\u0442\u043E\u0434\u0438\u043E\u0434\u043E\u0432, \u043B\u0430\u0437\u0435\u0440\u043D\u044B\u0445 \u0434\u0438\u043E\u0434\u043E\u0432, \u0434\u0438\u043E\u0434\u043E\u0432 \u0413\u0430\u043D\u043D\u0430, \u0442\u0443\u043D\u043D\u0435\u043B\u044C\u043D\u044B\u0445 \u0434\u0438\u043E\u0434\u043E\u0432, \u0444\u043E\u0442\u043E\u043F\u0440\u0438\u0451\u043C\u043D\u0438\u043A\u043E\u0432 \u0438 \u0434\u0435\u0442\u0435\u043A\u0442\u043E\u0440\u043E\u0432 \u044F\u0434\u0435\u0440\u043D\u044B\u0445 \u0438\u0437\u043B\u0443\u0447\u0435\u043D\u0438\u0439."@ru , "Arsenek galu, GaAs \u2013 nieorganiczny zwi\u0105zek chemiczny galu i arsenu. Zwi\u0105zek ten jest otrzymywany syntetycznie na potrzeby m.in. przemys\u0142u elektronicznego ze wzgl\u0119du na swoje w\u0142a\u015Bciwo\u015Bci p\u00F3\u0142przewodnikowe. Drugi obecnie po krzemie (Si) materia\u0142 najcz\u0119\u015Bciej wykorzystywany w mikro- i optoelektronice oraz technice mikrofalowej."@pl . @prefix foaf: . dbr:Gallium_arsenide foaf:depiction , , , . @prefix dcterms: . @prefix dbc: . dbr:Gallium_arsenide dcterms:subject dbc:Arsenides , dbc:Gallium_compounds , dbc:Optoelectronics , dbc:Solar_cells , dbc:Light-emitting_diode_materials , dbc:III-V_compounds , dbc:III-V_semiconductors , dbc:Zincblende_crystal_structure , dbc:IARC_Group_1_carcinogens , dbc:Inorganic_compounds ; dbo:wikiPageID 144143 ; dbo:wikiPageRevisionID 1118793952 ; dbo:wikiPageWikiLink dbr:Lattice_constant , dbr:Communications_satellite , dbr:Strategic_Defense_Initiative , dbr:Cray , dbr:Laser_diode , dbr:Methanol , dbr:Silicon_dioxide , dbr:Integrated_circuits , dbr:Gunn_diode , dbr:Thin-film_solar_cell , dbr:Radiation_hardening , dbr:Indium_gallium_arsenide , dbr:Venera_3 , dbr:Indium_gallium_phosphide , dbr:Epitaxy , dbr:Single_crystal , dbr:Bromine , dbr:Integrated_circuit , dbr:Cadmium_telluride , , , dbr:Monolithic_microwave_integrated_circuit , dbr:Integrated_injection_logic , dbr:Silicate , dbr:Direct-coupled_FET_logic , dbr:Arsenic , dbr:Solar_cell , , dbr:Solar_cells , dbr:Lunokhod_programme , dbr:Nanoelectronics , dbr:Gallium , dbr:Platinum , dbr:Arsenic_trichloride , dbr:Crystallographic_defect , dbr:Aluminium_gallium_arsenide , dbr:Carcinogen , dbr:Arsenic_acid , dbr:Gallium_antimonide , dbr:Field_effect_transistor , dbr:CMOS , dbr:Electrical_insulation , dbr:RCA , dbr:Gallium_nitride , dbr:Multi-junction_solar_cells , dbr:Gallium_phosphide , dbc:Arsenides , dbr:Czochralski_process , dbr:Indium_arsenide , dbr:Indium_phosphide , dbr:Alliant_Computer_Systems , dbr:Bridgman-Stockbarger_technique , dbr:Zhores_Alferov , dbr:Electron_mobility , dbr:Metalorganic_vapour-phase_epitaxy , dbr:Molar_absorptivity , dbr:Saturation_velocity , dbc:Gallium_compounds , , dbr:Dielectric_constant , dbr:Fermi_level , dbr:Economy_of_scale , dbr:Concentrator_photovoltaics , dbc:Optoelectronics , dbr:Oxidation_state , dbr:Band_gap , dbr:United_States_Department_of_Defense , dbc:Solar_cells , dbr:Aluminium_arsenide , dbr:Hydroxamic_acid , dbr:Fraunhofer_Institute_for_Solar_Energy_Systems , dbr:Ethanol , dbr:Microwave , dbr:Quantum_well , , dbr:Microwaves , dbr:Direct_band_gap , dbr:Solar_car_racing , dbr:MOVPE , dbr:Germanium , dbr:Heterostructure_emitter_bipolar_transistor , dbr:Buffered_FET_Logic , dbr:USSR , dbr:Gallium_manganese_arsenide , dbr:Multijunction_solar_cell , , dbr:Gallium_arsenide_phosphide , , dbr:Spalling , dbr:MOCVD , dbr:CRC_Press , dbr:Junction_field-effect_transistor , dbr:Hydrofluoric_acid , dbr:International_Agency_for_Research_on_Cancer , , , dbr:Infrared , dbr:Chemical_vapor_deposition , dbr:European_Chemicals_Agency , dbc:Light-emitting_diode_materials , dbr:Hydrogen_peroxide , dbr:GaN , dbc:III-V_semiconductors , , dbc:Zincblende_crystal_structure , dbr:Electron_hole , dbc:III-V_compounds , dbr:Supercomputer , dbr:Photomixing , dbr:Rocket_Lab , dbr:III-V , dbr:Silicon , dbr:Photovoltaic_array , dbr:Molecular_beam_epitaxy , dbr:Arsine , dbc:IARC_Group_1_carcinogens , dbr:Radar , dbr:Metalorganic_vapor_phase_epitaxy , dbr:Indirect_band_gap , dbr:Light-emitting_diode , dbr:Thin_film , dbr:Aluminum_gallium_arsenide , dbr:Arsenide , dbr:Hydride_vapour_phase_epitaxy , dbr:Heterojunction_bipolar_transistor , dbr:Convex_Computer , dbr:Mars , dbr:Crystalline_silicon , dbr:Aluminum_oxide , dbr:Semiconductor , dbr:High-electron-mobility_transistor , dbr:Fermi_level_pinning , dbr:MESFET , , dbr:Cray-3 , dbr:Photovoltaics , dbr:Mobile_phone , dbr:Hydrochloric_acid , , dbr:Surface_passivation , dbr:Acetone , dbr:Trimethylgallium , dbr:Mars_Exploration_Rover , dbc:Inorganic_compounds , dbr:Electron_volt , dbr:Integrated_Circuit , dbr:Spirit_rover , dbr:Source-coupled_FET_logic , dbr:HEMT , dbr:Spintronics , dbr:Opportunity_rover , dbr:QWIP , dbr:Microprocessor , dbr:Spin-charge_converter , dbr:Metalorganic ; dbo:wikiPageExternalLink , , , . @prefix dbpedia-nds: . dbr:Gallium_arsenide owl:sameAs dbpedia-nds:Galliumarsenid , , . @prefix dbpedia-tr: . dbr:Gallium_arsenide owl:sameAs dbpedia-tr:Galyum_arsenit . @prefix dbpedia-pl: . dbr:Gallium_arsenide owl:sameAs dbpedia-pl:Arsenek_galu , , . @prefix dbpedia-no: . dbr:Gallium_arsenide owl:sameAs dbpedia-no:Galliumarsenid , . @prefix dbpedia-sv: . dbr:Gallium_arsenide owl:sameAs dbpedia-sv:Galliumarsenid , wikidata:Q422819 . @prefix dbpedia-de: . dbr:Gallium_arsenide owl:sameAs dbpedia-de:Galliumarsenid , , . @prefix dbpedia-sr: . dbr:Gallium_arsenide owl:sameAs dbpedia-sr:Galijum_arsenid . @prefix dbpedia-sh: . dbr:Gallium_arsenide owl:sameAs dbpedia-sh:Galijum_arsenid , , , . @prefix dbpedia-et: . dbr:Gallium_arsenide owl:sameAs dbpedia-et:Galliumarseniid . @prefix dbpedia-da: . dbr:Gallium_arsenide owl:sameAs dbpedia-da:Galliumarsenid . @prefix dbpedia-es: . dbr:Gallium_arsenide owl:sameAs dbpedia-es:Arseniuro_de_galio , . @prefix dbpedia-id: . dbr:Gallium_arsenide owl:sameAs dbpedia-id:Galium_arsenida . @prefix dbpedia-nl: . dbr:Gallium_arsenide owl:sameAs dbpedia-nl:Galliumarsenide , . @prefix dbpedia-az: . dbr:Gallium_arsenide owl:sameAs dbpedia-az:Qallium_arsenid , , , . @prefix dbpedia-simple: . dbr:Gallium_arsenide owl:sameAs dbpedia-simple:Gallium_arsenide , , , . @prefix dbpedia-it: . dbr:Gallium_arsenide owl:sameAs dbpedia-it:Arseniuro_di_gallio . @prefix dbpedia-hu: . dbr:Gallium_arsenide owl:sameAs dbpedia-hu:Gallium-arzenid . @prefix yago-res: . dbr:Gallium_arsenide owl:sameAs yago-res:Gallium_arsenide , , , , . @prefix dbpedia-fi: . dbr:Gallium_arsenide owl:sameAs dbpedia-fi:Galliumarsenidi . @prefix dbp: . @prefix dbt: . dbr:Gallium_arsenide dbp:wikiPageUsesTemplate dbt:Val , dbt:Div_col , dbt:Div_col_end , dbt:Chem , dbt:Chembox_Hazards , dbt:Chembox_Identifiers , dbt:Cascite , dbt:Chembox , dbt:Chembox_Structure , dbt:Chembox_Properties , dbt:Chembox_Related , dbt:Chemboximage , dbt:Chemspidercite , dbt:Redirect , dbt:Reflist , dbt:Gallium_compounds , dbt:Stdinchicite , dbt:P-phrases , dbt:Commons_category , dbt:Circa , dbt:Citation_needed , dbt:E , dbt:Arsenic_compounds , dbt:Arsenides , dbt:Fdacite , dbt:Cite_book , dbt:GHS_health_hazard , dbt:Authority_control , dbt:Semiconductor_laser , dbt:H-phrases ; dbo:thumbnail ; dbp:imagecaption "GaAs wafer of orientation"@en . @prefix dbd: . dbr:Gallium_arsenide dbp:imagefile "2.0"^^dbd:second , "Gallium-arsenide-unit-cell-3D-balls.png"@en ; dbp:imagename "Samples of gallium arsenide"@en ; dbp:imagesize 244 ; dbp:pin "Gallium arsenide"@en ; dbp:verifiedfields "changed"@en ; dbp:verifiedrevid 476995185 ; dbp:watchedfields "changed"@en ; dbo:abstract "El Arseniuro de galio (GaAs) es un compuesto de galio y ars\u00E9nico. Es un importante semiconductor y se usa para fabricar dispositivos como circuitos integrados a frecuencias de microondas, diodos de emisi\u00F3n infrarroja, diodos l\u00E1ser y c\u00E9lulas fotovoltaicas."@es , "\u30D2\u5316\u30AC\u30EA\u30A6\u30E0\uFF08\u30D2\u304B\u30AC\u30EA\u30A6\u30E0\u3001gallium arsenide\uFF09\u306F\u30AC\u30EA\u30A6\u30E0\u306E\u30D2\u5316\u7269\u3067\u3042\u308A\u3001\u7D44\u6210\u5F0F\u306FGaAs\u3067\u3042\u308B\u3002\u5316\u5408\u7269\u534A\u5C0E\u4F53\u3067\u3042\u308B\u305F\u3081\u3001\u305D\u306E\u6027\u8CEA\u3092\u5229\u7528\u3057\u3066\u534A\u5C0E\u4F53\u7D20\u5B50\u306E\u6750\u6599\u3068\u3057\u3066\u591A\u7528\u3055\u308C\u3066\u3044\u308B\u3002\u534A\u5C0E\u4F53\u5206\u91CE\u3067\u306F\u30AC\u30EA\u30A6\u30E0\u30D2\u7D20\uFF08\u30AC\u30EA\u30A6\u30E0\u7812\u7D20\uFF09\u3084\u3001\u3055\u3089\u306B\u306F\u305D\u308C\u3092\u77ED\u7E2E\u3057\u305F\u30AC\u30EA\u30D2\u7D20\u3068\u3044\u3046\u547C\u79F0\u3067\u547C\u3070\u308C\u308B\u3053\u3068\u3082\u591A\u3044\u3002"@ja , "Gallium arsenide (GaAs) is a III-V direct band gap semiconductor with a zinc blende crystal structure. Gallium arsenide is used in the manufacture of devices such as microwave frequency integrated circuits, monolithic microwave integrated circuits, infrared light-emitting diodes, laser diodes, solar cells and optical windows. GaAs is often used as a substrate material for the epitaxial growth of other III-V semiconductors, including indium gallium arsenide, aluminum gallium arsenide and others."@en , "Galium arsenida (GaAs) adalah senyawa dari unsur-unsur galium dan arsenik. Ini adalah semikonduktor dengan struktur kristal seng blende. Galium arsenida digunakan dalam pembuatan perangkat seperti sirkuit terintegrasi frekuensi gelombang , , dioda pemancar cahaya inframerah, dioda laser, sel surya dan jendela optik. GaAs sering digunakan sebagai bahan substrat untuk pertumbuhan epitaksial semikonduktor III-V lainnya, termasuk , dan lain-lain."@in , "\u0410\u0440\u0441\u0435\u043D\u0438\u0301\u0434 \u0433\u0430\u0301\u043B\u043B\u0438\u044F (GaAs) \u2014 \u0445\u0438\u043C\u0438\u0447\u0435\u0441\u043A\u043E\u0435 \u0441\u043E\u0435\u0434\u0438\u043D\u0435\u043D\u0438\u0435 \u0433\u0430\u043B\u043B\u0438\u044F \u0438 \u043C\u044B\u0448\u044C\u044F\u043A\u0430. \u0412\u0430\u0436\u043D\u044B\u0439 \u043F\u043E\u043B\u0443\u043F\u0440\u043E\u0432\u043E\u0434\u043D\u0438\u043A, \u0442\u0440\u0435\u0442\u0438\u0439 \u043F\u043E \u043C\u0430\u0441\u0448\u0442\u0430\u0431\u0430\u043C \u0438\u0441\u043F\u043E\u043B\u044C\u0437\u043E\u0432\u0430\u043D\u0438\u044F \u0432 \u043F\u0440\u043E\u043C\u044B\u0448\u043B\u0435\u043D\u043D\u043E\u0441\u0442\u0438 \u043F\u043E\u0441\u043B\u0435 \u043A\u0440\u0435\u043C\u043D\u0438\u044F \u0438 \u0433\u0435\u0440\u043C\u0430\u043D\u0438\u044F. \u0418\u0441\u043F\u043E\u043B\u044C\u0437\u0443\u0435\u0442\u0441\u044F \u0434\u043B\u044F \u0441\u043E\u0437\u0434\u0430\u043D\u0438\u044F \u0441\u0432\u0435\u0440\u0445\u0432\u044B\u0441\u043E\u043A\u043E\u0447\u0430\u0441\u0442\u043E\u0442\u043D\u044B\u0445 \u0438\u043D\u0442\u0435\u0433\u0440\u0430\u043B\u044C\u043D\u044B\u0445 \u0441\u0445\u0435\u043C \u0438 \u0442\u0440\u0430\u043D\u0437\u0438\u0441\u0442\u043E\u0440\u043E\u0432, \u0441\u0432\u0435\u0442\u043E\u0434\u0438\u043E\u0434\u043E\u0432, \u043B\u0430\u0437\u0435\u0440\u043D\u044B\u0445 \u0434\u0438\u043E\u0434\u043E\u0432, \u0434\u0438\u043E\u0434\u043E\u0432 \u0413\u0430\u043D\u043D\u0430, \u0442\u0443\u043D\u043D\u0435\u043B\u044C\u043D\u044B\u0445 \u0434\u0438\u043E\u0434\u043E\u0432, \u0444\u043E\u0442\u043E\u043F\u0440\u0438\u0451\u043C\u043D\u0438\u043A\u043E\u0432 \u0438 \u0434\u0435\u0442\u0435\u043A\u0442\u043E\u0440\u043E\u0432 \u044F\u0434\u0435\u0440\u043D\u044B\u0445 \u0438\u0437\u043B\u0443\u0447\u0435\u043D\u0438\u0439."@ru , "Arsenid gallit\u00FD (tak\u00E9 arsenid gallia), chemick\u00FD vzorec GaAs, je slou\u010Denina gallia a arsenu. Je to v\u00FDznamn\u00FD polovodi\u010D, pou\u017E\u00EDvan\u00FD p\u0159i v\u00FDrob\u011B integrovan\u00FDch obvod\u016F pracuj\u00EDc\u00EDch v oboru mikrovln, infra\u010Derven\u00FDch a polovodi\u010Dov\u00FDch laser\u016F a fotovoltaick\u00FDch \u010Dl\u00E1nk\u016F."@cs , "GaAs, \u00E1bhar leathsheolt\u00F3ra a \u00FAs\u00E1idtear i dtrasraitheoir\u00ED, cealla gr\u00E9ine is l\u00E9asair leathsheolt\u00F3ra (ach nach n-\u00FAs\u00E1idtear in aon chor chomh minic le sileacan chuige seo). Cos\u00FAil le sileacan, agus d\u00E9antar \u00ED a dh\u00F3p\u00E1il chun a sheoltacht leictreach a mhodhn\u00FA mar is g\u00E1. Gluaiseann leictreoin i bhfad n\u00EDos tapa ann n\u00E1 i sileacan, agus is cinnte go mbainfear feidhm i bhfad n\u00EDos m\u00F3 aisti as seo amach. Bunt\u00E1iste eile ag GaAs thar Si is ea go dtraiseolann s\u00E9 solas, rud a bheidh an-t\u00E1bhachtach sna slisn\u00ED ina mbeidh f\u00F3t\u00F3in mar iompr\u00F3ir\u00ED sonra\u00ED in ionad leictreon."@ga , "Arsenek galu, GaAs \u2013 nieorganiczny zwi\u0105zek chemiczny galu i arsenu. Zwi\u0105zek ten jest otrzymywany syntetycznie na potrzeby m.in. przemys\u0142u elektronicznego ze wzgl\u0119du na swoje w\u0142a\u015Bciwo\u015Bci p\u00F3\u0142przewodnikowe. Drugi obecnie po krzemie (Si) materia\u0142 najcz\u0119\u015Bciej wykorzystywany w mikro- i optoelektronice oraz technice mikrofalowej. Arsenek galu wykazuje wi\u0119ksz\u0105 od krzemu odporno\u015B\u0107 na dzia\u0142anie promieniowania elektromagnetycznego. Urz\u0105dzenia elektroniczne oparte na GaAs mog\u0105 pracowa\u0107 z cz\u0119stotliwo\u015Bciami przekraczaj\u0105cymi 250 GHz.Parametr p\u00F3\u0142przewodnictwa \u2013 przerwa energetyczna (w temperaturze 300 K) Wed\u0142ug = 1,424 eV."@pl , "Die bin\u00E4re Verbindung Galliumarsenid (GaAs) ist ein Halbleiterwerkstoff, der sowohl halbleitend (mit Elementen aus den Gruppen II, IV oder VI des Periodensystems dotiert) als auch semiisolierend (undotiert) sein kann. Die auf diesem Substratmaterial aufbauenden Verbindungen und Epitaxie-Schichten werden zur Herstellung elektronischer Bauelemente ben\u00F6tigt, die bei Hochfrequenzanwendungen und f\u00FCr die Umwandlung elektrischer in optische Signale eingesetzt werden."@de , "Galliumarsenide (GaAs) is een anorganische verbinding tussen gallium en arseen. Het is een belangrijke halfgeleider met toepassingen in leds en zonnecellen. Vanwege zijn hoge kunnen elektronen erg snel van het ene naar het andere atoom overspringen. Hierom wordt galliumarsenide veel toegepast in ge\u00EFntegreerde schakelingen waarbij hoge frequenties (tot meer dan 250 GHz) gebruikt worden."@nl , "\u0632\u0631\u0646\u064A\u062E\u064A\u062F \u0627\u0644\u063A\u0627\u0644\u064A\u0648\u0645 \u0645\u0631\u0643\u0628 \u0643\u064A\u0645\u064A\u0627\u0626\u064A \u0644\u0647 \u0627\u0644\u0635\u064A\u063A\u0629 GaAs \u060C \u0648\u064A\u0643\u0648\u0646 \u0639\u0644\u0649 \u0634\u0643\u0644 \u0628\u0644\u0648\u0631\u0627\u062A \u0631\u0645\u0627\u062F\u064A\u0629. \u0632\u0631\u0646\u064A\u062E\u064A\u062F \u0627\u0644\u063A\u0627\u0644\u064A\u0648\u0645 (GaAs) \u0647\u0648 \u0645\u0631\u0643\u0628 \u0645\u0646 \u0639\u0646\u0627\u0635\u0631 \u0627\u0644\u063A\u0627\u0644\u064A\u0648\u0645 \u0648\u0627\u0644\u0632\u0631\u0646\u064A\u062E. \u0648\u0647\u0648 \u0639\u0628\u0627\u0631\u0629 \u0639\u0646 \u0623\u0634\u0628\u0627\u0647 \u0645\u0648\u0635\u0644\u0627\u062A \u0630\u0627\u062A \u0641\u062C\u0648\u0629 III-V \u0645\u0628\u0627\u0634\u0631\u0629 \u0645\u0639 \u0628\u0646\u064A\u0629 \u0628\u0644\u0648\u0631\u064A\u0629 \u0645\u0646 \u0627\u0644\u0632\u0646\u0643. \u064A\u0633\u062A\u062E\u062F\u0645 \u0632\u0631\u0646\u064A\u062E \u0627\u0644\u063A\u0627\u0644\u064A\u0648\u0645 \u0641\u064A \u062A\u0635\u0646\u064A\u0639 \u0627\u0644\u0623\u062C\u0647\u0632\u0629 \u0645\u062B\u0644 \u0627\u0644\u062F\u0648\u0627\u0626\u0631 \u0627\u0644\u0645\u062A\u0643\u0627\u0645\u0644\u0629 \u0627\u0644\u062A\u0631\u062F\u062F \u0627\u0644\u0645\u064A\u0643\u0631\u0648\u0648\u064A\u0641\u060C \u0627\u0644\u062F\u0648\u0627\u0626\u0631 \u0627\u0644\u0645\u062A\u0643\u0627\u0645\u0644\u0629 \u0627\u0644\u0645\u064A\u0643\u0631\u0648\u0648\u064A\u0641 \u0645\u062A\u062D\u062F\u0629\u060C \u0627\u0644\u062B\u0646\u0627\u0626\u064A\u0627\u062A \u0627\u0644\u0628\u0627\u0639\u062B\u0629 \u0644\u0644\u0636\u0648\u0621 \u0627\u0644\u0623\u0634\u0639\u0629 \u062A\u062D\u062A \u0627\u0644\u062D\u0645\u0631\u0627\u0621\u060C \u0627\u0644\u062B\u0646\u0627\u0626\u064A\u0627\u062A \u0627\u0644\u0644\u064A\u0632\u0631 \u0648\u0627\u0644\u062E\u0644\u0627\u064A\u0627 \u0627\u0644\u0634\u0645\u0633\u064A\u0629 \u0648\u0627\u0644\u0646\u0648\u0627\u0641\u0630 \u0627\u0644\u0628\u0635\u0631\u064A\u0629. \u063A\u0627\u0644\u0628\u064B\u0627 \u0645\u0627 \u064A\u062A\u0645 \u0627\u0633\u062A\u062E\u062F\u0627\u0645 GaAs \u0643\u0645\u0648\u0627\u062F \u0623\u0633\u0627\u0633\u064A\u0629 \u0644\u0644\u0646\u0645\u0648 \u0627\u0644\u0641\u0648\u0642\u064A \u0644\u0623\u0634\u0628\u0627\u0647 \u0627\u0644\u0645\u0648\u0635\u0644\u0627\u062A III-V \u0627\u0644\u0623\u062E\u0631\u0649 \u0628\u0645\u0627 \u0641\u064A \u0630\u0644\u0643 \u0632\u0631\u0646\u064A\u062E\u064A\u062F \u0627\u0644\u063A\u0627\u0644\u064A\u0648\u0645 \u0627\u0644\u0625\u0646\u062F\u064A\u0648\u0645 \u0648\u0623\u0631\u0633\u064A\u0646\u064A\u062F \u0627\u0644\u0623\u0644\u0648\u0645\u0646\u064A\u0648\u0645 \u0627\u0644\u063A\u0627\u0644\u064A\u0648\u0645 \u0648\u063A\u064A\u0631\u0647\u0627."@ar , "L'arsenur de gal\u00B7li (GaAs) \u00E9s un compost de gal\u00B7li i ars\u00E8nic. \u00C9s un important semiconductor i es fa servir per fabricar dispositius com circuits integrats a freq\u00FC\u00E8ncies de microones, d\u00EDodes d'emissi\u00F3 infraroja, d\u00EDodes l\u00E0ser i c\u00E8l\u00B7lules fotovoltaiques."@ca , "L'ars\u00E9niure de gallium est un compos\u00E9 chimique de formule brute GaAs appartenant \u00E0 la famille des semiconducteurs III-V. C'est un mat\u00E9riau semi-conducteur \u00E0 gap direct pr\u00E9sentant une structure cristalline cubique de type sphal\u00E9rite (blende). Il est utilis\u00E9 notamment pour r\u00E9aliser des composants micro-ondes, des circuits int\u00E9gr\u00E9s monolithiques hyperfr\u00E9quences, des composants opto-\u00E9lectroniques, des diodes \u00E9lectroluminescentes dans l'infrarouge, des diodes laser, des cellules photovolta\u00EFques et des fen\u00EAtres optiques. Le GaAs est dit \u00AB III-V \u00BB car le gallium et l\u2019arsenic se trouvent respectivement dans le groupe 13 et le groupe 15 du tableau p\u00E9riodique, appel\u00E9s jadis colonne IIIB et colonne VB, et donc trois et cinq \u00E9lectrons de valence. L'ars\u00E9niure de gallium est couramment utilis\u00E9 comme substrat pour la croissance \u00E9pitaxiale d'autres III-V tels que l'ars\u00E9niure d'indium-gallium InxGa1\u2212xAs et l'ars\u00E9niure d'aluminium-gallium AlxGa1\u2212xAs."@fr , "\u0410\u0440\u0441\u0435\u043D\u0456\u0301\u0434 \u0433\u0430\u0301\u043B\u0456\u044E (GaAs) \u2014 \u043A\u0440\u0438\u0441\u0442\u0430\u043B\u0456\u0447\u043D\u0430 \u0440\u0435\u0447\u043E\u0432\u0438\u043D\u0430 \u0456\u0437 \u043A\u0440\u0438\u0441\u0442\u0430\u043B\u0456\u0447\u043D\u043E\u044E \u0491\u0440\u0430\u0442\u043A\u043E\u044E \u0442\u0438\u043F\u0443 \u0446\u0438\u043D\u043A\u043E\u0432\u0430 \u043E\u0431\u043C\u0430\u043D\u043A\u0430. \u041F\u0440\u044F\u043C\u043E\u0437\u043E\u043D\u043D\u0438\u0439 \u043D\u0430\u043F\u0456\u0432\u043F\u0440\u043E\u0432\u0456\u0434\u043D\u0438\u043A \u0456\u0437 \u0448\u0438\u0440\u0438\u043D\u043E\u044E \u0437\u0430\u0431\u043E\u0440\u043E\u043D\u0435\u043D\u043E\u0457 \u0437\u043E\u043D\u0438 1,424 \u0435\u0412. \u0428\u0438\u0440\u043E\u043A\u043E \u0432\u0438\u043A\u043E\u0440\u0438\u0441\u0442\u043E\u0432\u0443\u0454\u0442\u044C\u0441\u044F \u0434\u043B\u044F \u0441\u0442\u0432\u043E\u0440\u0435\u043D\u043D\u044F \u043D\u0430\u043F\u0456\u0432\u043F\u0440\u043E\u0432\u0456\u0434\u043D\u0438\u043A\u043E\u0432\u0438\u0445 \u043F\u0440\u0438\u0441\u0442\u0440\u043E\u0457\u0432, \u0431\u0430\u0433\u0430\u0442\u043E\u0448\u0430\u0440\u043E\u0432\u0438\u0445 \u0441\u0442\u0440\u0443\u043A\u0442\u0443\u0440, \u043A\u0432\u0430\u043D\u0442\u043E\u0432\u0438\u0445 \u0442\u043E\u0447\u043E\u043A, \u0434\u0440\u043E\u0442\u0438\u043D \u0439 \u044F\u043C. \u041D\u0430\u043B\u0435\u0436\u0438\u0442\u044C \u0434\u043E \u043A\u043B\u0430\u0441\u0443 \u0456\u043D\u0442\u0435\u0440\u043C\u0435\u0442\u0430\u043B\u0456\u0447\u043D\u0438\u0445 \u0441\u043F\u043E\u043B\u0443\u043A \u0435\u043B\u0435\u043C\u0435\u043D\u0442\u0456\u0432 \u0406\u0406\u0406 \u0456 V \u0433\u0440\u0443\u043F \u043F\u0435\u0440\u0456\u043E\u0434\u0438\u0447\u043D\u043E\u0457 \u0441\u0438\u0441\u0442\u0435\u043C\u0438 \u0435\u043B\u0435\u043C\u0435\u043D\u0442\u0456\u0432, \u0441\u043A\u043E\u0440\u043E\u0447\u0435\u043D\u043E \u2014 \u0441\u043F\u043E\u043B\u0443\u043A\u0438 AIIIBV (\u0430\u043D\u0433\u043B. III-V Compounds)."@uk , "Gallium(III)arsenid, galliumarsenid (ofta f\u00F6rkortat GaAs) \u00E4r en f\u00F6rening av grund\u00E4mnena gallium (kemisk beteckning 'Ga') och arsenik (kemisk beteckning 'As'). Den \u00E4r en viktig halvledare och anv\u00E4nds f\u00F6r att tillverka integrerade kretsar som arbetar i mikrov\u00E5gsfrekvenser (flera GHz), infrar\u00F6da lysdioder, laserdioder och solceller."@sv , "Arsenieto de g\u00E1lio \u00E9 composto qu\u00EDmico sint\u00E9tico, de f\u00F3rmula m\u00EDnima GaAs. \u00C9 material semicondutor de interesse da ind\u00FAstria eletr\u00F4nica/inform\u00E1tica, muito utilizado na constru\u00E7\u00E3o de circuitos integrados. O arsenieto de g\u00E1lio \u00E9 obtido na forma de l\u00E2minas, a partir da combina\u00E7\u00E3o dos elementos qu\u00EDmicos constituintes, ars\u00EAnio e g\u00E1lio, e permite, segundo a Revista da Siemens, a fabrica\u00E7\u00E3o dos chips mais r\u00E1pidos do mundo, os quais, embora mais caros do que os que utilizam substrato de apenas sil\u00EDcio, s\u00E3o muito mais velozes na transmiss\u00E3o de informa\u00E7\u00F5es, al\u00E9m de possibilitar uma redu\u00E7\u00E3o significativa nos tamanhos dos equipamentos."@pt , "\u7837\u5316\u93B5\uFF08\u5316\u5B78\u5F0F\uFF1AGaAs\uFF09\u662F\u93B5\u548C\u7837\u5169\u7A2E\u5143\u7D20\u6240\u5408\u6210\u7684\u5316\u5408\u7269\uFF0C\u4E5F\u662F\u91CD\u8981\u7684IIIA\u65CF\u3001VA\u65CF\u5316\u5408\u7269\u534A\u5BFC\u4F53\u6750\u6599\uFF0C\u7528\u4F86\u88FD\u4F5C\u5FAE\u6CE2\u7A4D\u9AD4\u96FB\u8DEF\u3001\u7D05\u5916\u7DDA\u767C\u5149\u4E8C\u6975\u9AD4\u3001\u534A\u5BFC\u4F53\u6FC0\u5149\u5668\u548C\u592A\u967D\u96FB\u6C60\u7B49\u5143\u4EF6\u3002 GaAs\u5316\u5408\u7269\u534A\u5BFC\u4F53\u7279\u522B\u9002\u5408\u5E94\u7528\u4E8E\u65E0\u7EBF\u901A\u4FE1\u4E2D\u7684\u9AD8\u9891\u4F20\u8F93\u9886\u57DF\uFF0C\u73B0\u5728\u8D8A\u6765\u8D8A\u591A\u88AB\u5E94\u7528\u4E8E\u5C04\u9891\u524D\u7AEF\u5668\u4EF6\uFF0C\u8FD9\u662F\u56E0\u4E3AGaAs\u5316\u5408\u7269\u534A\u5BFC\u4F53\u7535\u5B50\u8FC1\u79FB\u7387\u6BD4\u4F20\u7EDF\u7684\u7845\u5FEB\uFF0C\u4E14\u5177\u6709\u6297\u5E72\u6270\u3001\u4F4E\u566A\u58F0\u4E0E\u8010\u9AD8\u7535\u538B\u3001\u8010\u9AD8\u6E29\u4E0E\u9AD8\u9891\u4F7F\u7528\u7B49\u7279\u6027\uFF0C\u57284G\u4E0E5G\u65F6\u4EE3\u6709\u9AD8\u5EA6\u9700\u6C42\u3002"@zh , "L'arseniuro di gallio \u00E8 un composto chimico inorganico. \u00C8 un semiconduttore composto dalla combinazione degli elementi chimici arsenico e gallio. La sua formula chimica \u00E8 GaAs. \u00C8 caratterizzato da un'alta mobilit\u00E0 elettrica dei portatori liberi di carica (elettroni e lacune) e da una banda di energia proibita diretta, per cui trova applicazioni nei dispositivi elettronici ad altissima velocit\u00E0 e nei dispositivi emettitori di luce (componenti per microonde, diodi LED e laser, componenti per lettori DVD e per radar automobilistici), nonch\u00E9 nelle celle fotovoltaiche."@it , "\uBE44\uC18C\uD654 \uAC08\uB968(Gallium arsenide, GaAs) \uB610\uB294 \uAC08\uB968\uBE44\uC18C\uB294 \uAC08\uB968\uACFC \uBE44\uC18C\uB85C \uAD6C\uC131\uB41C \uD654\uD569\uBB3C\uC774\uB2E4. GaAs \uD0DC\uC591\uC804\uC9C0\uB294 \uD0DC\uC591\uC5D0\uB108\uC9C0\uB97C \uC804\uAE30\uB85C \uBC14\uAFD4\uC8FC\uB294 \uAD11\uBCC0\uD658 \uD6A8\uC728\uC774 40%\uB85C\uC11C, \uC2E4\uB9AC\uCF58 \uD0DC\uC591\uC804\uC9C0(16%)\uBCF4\uB2E4 \uB450 \uBC30 \uC774\uC0C1 \uD6A8\uC728\uC774 \uB192\uB2E4. 1980\uB144\uB300 \uCD08\uBC18\uC5D0 \uAC08\uB968\uBE44\uC18C \uD0DC\uC591\uC804\uC9C0\uC758 \uD6A8\uC728\uC774 \uC2E4\uB9AC\uCF58 \uD0DC\uC591\uC804\uC9C0 \uD6A8\uC728\uC744 \uCC98\uC74C\uC73C\uB85C \uB6F0\uC5B4\uB118\uC5C8\uACE0, 1990\uB144\uB300 \uC774\uB974\uB7EC\uC11C\uB294 \uC778\uACF5\uC704\uC131\uC5D0 \uC4F0\uC774\uB294 \uAC12\uC2FC \uC2E4\uB9AC\uCF58 \uD0DC\uC591\uC804\uC9C0\uB97C \uAC12\uBE44\uC2FC \uAC08\uB968\uBE44\uC18C \uD0DC\uC591\uC804\uC9C0\uB85C \uB300\uCCB4\uD558\uC600\uB2E4. \uAC08\uB968\uBE44\uC18C \uD0DC\uC591\uC804\uC9C0\uB294 \uC2E4\uB9AC\uCF58 \uD0DC\uC591\uC804\uC9C0\uBCF4\uB2E4 \uD6E8\uC52C \uC791\uAC8C \uB9CC\uB4E4 \uC218 \uC788\uACE0 \uC6D0\uC7AC\uB8CC \uC0AC\uC6A9\uB7C9\uB3C4 \uD68D\uAE30\uC801\uC73C\uB85C \uC904\uC77C \uC218 \uC788\uB2E4. \uAC08\uB968\uBE44\uC18C\uB294 \uC2E4\uB9AC\uCF58\uC5D0 \uBE44\uD574 \uC2E0\uD638\uCC98\uB9AC \uC18D\uB3C4\uAC00 6\uBC30\uAC00\uB7C9 \uBE60\uB974\uACE0 \uC804\uB825 \uC18C\uBAA8\uB7C9\uC740 3\uBD84\uC758 1 \uC218\uC900\uC774\uC9C0\uB9CC, \uAC00\uACA9\uC740 \uC2E4\uB9AC\uCF58 \uC6E8\uC774\uD37C\uC5D0 \uBE44\uD574 15\uBC30\uAC00\uB7C9 \uB192\uB2E4. \uC544\uC774\uD3F0 \uB4F1 \uD604\uC7AC\uC758 \uC2A4\uB9C8\uD2B8\uD3F0\uC740 \uB300\uADDC\uBAA8\uC9D1\uC801\uD68C\uB85C(LSI), \uAC08\uB968\uBE44\uC18C(GaAs) \uBC18\uB3C4\uCCB4, \uB9AC\uD2AC\uC774\uC628 \uBC30\uD130\uB9AC\uAC00 \uC5C6\uC5C8\uB2E4\uBA74 \uBD88\uAC00\uB2A5\uD55C \uC81C\uD488\uC774\uB2E4."@ko . @prefix gold: . dbr:Gallium_arsenide gold:hypernym dbr:Compound . @prefix prov: . dbr:Gallium_arsenide prov:wasDerivedFrom . @prefix xsd: . dbr:Gallium_arsenide dbo:wikiPageLength "45464"^^xsd:nonNegativeInteger ; dbo:iupacName "Gallium arsenide"@en . @prefix wikipedia-en: . dbr:Gallium_arsenide foaf:isPrimaryTopicOf wikipedia-en:Gallium_arsenide .