. . "Z\u0142\u0105cze m-s (metal-p\u00F3\u0142przewodnik) - z\u0142\u0105cze metalu z p\u00F3\u0142przewodnikiem powsta\u0142e poprzez pokrycie metalem p\u0142ytki z p\u00F3\u0142przewodnika.Z\u0142\u0105cze m-s mo\u017Ce mie\u0107 jedn\u0105 z 2 charakterystyk pr\u0105dowo - napi\u0119ciowych: \n* liniow\u0105 - z\u0142\u0105cze o charakterze omowym (oporno\u015Bciowym) \n* nieliniow\u0105 - z\u0142\u0105cze prostuj\u0105ce, tzw. \u201Ez\u0142\u0105cze Schottky\u2019ego\u201D rodzaj charakterystyki jest zale\u017Cny od relacji pracy wyj\u015Bcia elektronu z metalu do p\u00F3\u0142przewodnika i na odwr\u00F3t, oraz od koncentracji p\u00F3\u0142przewodnika."@pl . . "\u56FA\u4F53\u7269\u7406\u5B66\u306B\u304A\u3044\u3066\u91D1\u5C5E-\u534A\u5C0E\u4F53\u63A5\u5408\u3068\u306F\u3001\u63A5\u5408\u306E\u4E00\u7A2E\u3067\u3001\u91D1\u5C5E\u3068\u534A\u5C0E\u4F53\u304C\u7DCA\u5BC6\u306B\u63A5\u89E6\u3059\u308B\u3002\u6700\u3082\u53E4\u3044\u5B9F\u7528\u7684\u306A\u534A\u5C0E\u4F53\u30C7\u30D0\u30A4\u30B9\u3067\u3042\u308B\u3002\u91D1\u5C5E-\u534A\u5C0E\u4F53\u63A5\u5408\u306F\u3001\u6574\u6D41\u4F5C\u7528\u304C\u3042\u308B\u3082\u306E\u3068\u7121\u3044\u3082\u306E\u306B\u5206\u985E\u3055\u308C\u308B\u3002\u6574\u6D41\u4F5C\u7528\u304C\u3042\u308B\u91D1\u5C5E-\u534A\u5C0E\u4F53\u63A5\u5408\u306F\u30B7\u30E7\u30C3\u30C8\u30AD\u30FC\u969C\u58C1\u3092\u5F62\u6210\u3057\u3066\u304A\u308A\u3001\u30B7\u30E7\u30C3\u30C8\u30AD\u30FC\u30C0\u30A4\u30AA\u30FC\u30C9\u3067\u7528\u3044\u3089\u308C\u308B\u3002\u6574\u6D41\u4F5C\u7528\u304C\u7121\u3044\u91D1\u5C5E-\u534A\u5C0E\u4F53\u63A5\u5408\u306F\u30AA\u30FC\u30DF\u30C3\u30AF\u30B3\u30F3\u30BF\u30AF\u30C8\u3068\u547C\u3070\u308C\u308B\u3002\uFF08\u6574\u6D41\u4F5C\u7528\u304C\u3042\u308B\u534A\u5C0E\u4F53-\u534A\u5C0E\u4F53\u63A5\u5408\u306Fpn\u63A5\u5408\u3068\u3057\u3066\u77E5\u3089\u308C\u308B\u3002\uFF09 \u30AA\u30FC\u30DF\u30C3\u30AF\u30B3\u30F3\u30BF\u30AF\u30C8\u3067\u306F\u96FB\u8377\u304C\u30C8\u30E9\u30F3\u30B8\u30B9\u30BF\u3068\u5916\u90E8\u56DE\u8DEF\u3068\u306E\u9593\u3092\u5BB9\u6613\u306B\u79FB\u52D5\u3067\u304D\u308B\u305F\u3081\u3001\u901A\u5E38\u306F\u30AA\u30FC\u30DF\u30C3\u30AF\u30B3\u30F3\u30BF\u30AF\u30C8\u304C\u671B\u307E\u308C\u308B\u3002\u3057\u304B\u3057\u30B7\u30E7\u30C3\u30C8\u30AD\u30FC\u30C0\u30A4\u30AA\u30FC\u30C9\u3001\u3001\u91D1\u5C5E-\u534A\u5C0E\u4F53\u96FB\u754C\u52B9\u679C\u30C8\u30E9\u30F3\u30B8\u30B9\u30BF\uFF08MOSFET\uFF09\u306A\u3069\u306F\u30B7\u30E7\u30C3\u30C8\u30AD\u30FC\u969C\u58C1\u304C\u7528\u3044\u3089\u308C\u3066\u3044\u308B\u3002"@ja . . "Metal\u2013semiconductor junction"@en . . . . . . . . . . "Band diagrams for models of formation of junction between silver and n-doped silicon. In practice this Schottky barrier is approximately \u03A6B = 0.8 eV."@en . . . . . . . . "Nella fisica dello stato solido, una giunzione metallo-semiconduttore \u00E8 una tipologia di giunzione nella quale un metallo viene messo in contatto con un materiale semiconduttore. \u00C8 il primo tipo reale di dispositivo a semiconduttore. Le giunzioni M-S possono funzionare come rettificanti oppure possono non avere caratteristiche rettificanti. La giunzione M-S rettificante forma una barriera Schottky, costituendo un dispositivo noto come diodo Schottky, mentre una giunzione M-S non rettificante viene chiamata contatto ohmico (Si ricorda che una giunzione rettificante semiconduttore-semiconduttore, che \u00E8 il dispositivo ad oggi pi\u00F9 diffuso, \u00E8 noto come giunzione p-n)."@it . . . "Metal semiconductor junction Bardeen picture.svg"@en . . . . . . . . . "Nella fisica dello stato solido, una giunzione metallo-semiconduttore \u00E8 una tipologia di giunzione nella quale un metallo viene messo in contatto con un materiale semiconduttore. \u00C8 il primo tipo reale di dispositivo a semiconduttore. Le giunzioni M-S possono funzionare come rettificanti oppure possono non avere caratteristiche rettificanti. La giunzione M-S rettificante forma una barriera Schottky, costituendo un dispositivo noto come diodo Schottky, mentre una giunzione M-S non rettificante viene chiamata contatto ohmico (Si ricorda che una giunzione rettificante semiconduttore-semiconduttore, che \u00E8 il dispositivo ad oggi pi\u00F9 diffuso, \u00E8 noto come giunzione p-n)."@it . . . . . . . . . "14355756"^^ . "Z\u0142\u0105cze m-s (metal-p\u00F3\u0142przewodnik) - z\u0142\u0105cze metalu z p\u00F3\u0142przewodnikiem powsta\u0142e poprzez pokrycie metalem p\u0142ytki z p\u00F3\u0142przewodnika.Z\u0142\u0105cze m-s mo\u017Ce mie\u0107 jedn\u0105 z 2 charakterystyk pr\u0105dowo - napi\u0119ciowych: \n* liniow\u0105 - z\u0142\u0105cze o charakterze omowym (oporno\u015Bciowym) \n* nieliniow\u0105 - z\u0142\u0105cze prostuj\u0105ce, tzw. \u201Ez\u0142\u0105cze Schottky\u2019ego\u201D rodzaj charakterystyki jest zale\u017Cny od relacji pracy wyj\u015Bcia elektronu z metalu do p\u00F3\u0142przewodnika i na odwr\u00F3t, oraz od koncentracji p\u00F3\u0142przewodnika."@pl . . . . . . . . . . . . . "Z\u0142\u0105cze m-s"@pl . "\u91D1\u5C5E\u534A\u5C0E\u4F53\u63A5\u5408"@ja . . . . "In solid-state physics, a metal\u2013semiconductor (M\u2013S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M\u2013S junctions can either be rectifying or non-rectifying. The rectifying metal\u2013semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. (In contrast, a rectifying semiconductor\u2013semiconductor junction, the most common semiconductor device today, is known as a p\u2013n junction.)"@en . . "1069880194"^^ . . . . . . . . . . . . "Uni\u00F3 metall-semiconductor"@ca . . . . . . . . . . . . . . . . . "Giunzione metallo-semiconduttore"@it . . . . . "Als Metall-Halbleiter-Kontakt wird in der Halbleiterphysik und -technik im Allgemeinen ein Kontakt zwischen Metallen und Halbleitern bezeichnet. Metall-Halbleiter-\u00DCberg\u00E4nge kommen bei der Kontaktierung von halbleitenden Materialien vor und stellen somit eines der wichtigsten Elemente bei Halbleiterbauelementen und mikroelektronischen Schaltkreisen dar. Sie k\u00F6nnen aber auch eigenst\u00E4ndige Bauelemente darstellen, wie zum Beispiel die Schottky-Diode."@de . . . . . . . . "Metal semiconductor junction Schottky approximation.svg"@en . . . . . . . . . "Picture showing Fermi level pinning effect from metal-induced gap states: The bands in the silicon already start out bent due to surface states. They are bent again just before contact . Upon contact however, the band bending changes completely, in a way that depends on the chemistry of the Ag-Si bonding."@en . "Als Metall-Halbleiter-Kontakt wird in der Halbleiterphysik und -technik im Allgemeinen ein Kontakt zwischen Metallen und Halbleitern bezeichnet. Metall-Halbleiter-\u00DCberg\u00E4nge kommen bei der Kontaktierung von halbleitenden Materialien vor und stellen somit eines der wichtigsten Elemente bei Halbleiterbauelementen und mikroelektronischen Schaltkreisen dar. Sie k\u00F6nnen aber auch eigenst\u00E4ndige Bauelemente darstellen, wie zum Beispiel die Schottky-Diode. Diese \u00DCberg\u00E4nge treten allgemein in zwei Formen auf, zum einen als polungsunabh\u00E4ngige Kontakte mit einer linearen Strom-Spannungs-Charakteristik, sogenannte ohmsche Kontakte, zum anderen stark polungsabh\u00E4ngige Kontakte mit der Strom-Spannungs-Charakteristik einer Diode, sogenannte Schottky-Kontakte. Welche Form sich an der Kontaktstelle eines Metalls und eines Halbleiters ausbildet, h\u00E4ngt prim\u00E4r von der Lage der Fermi-Energie im Metall und dem Halbleiter ab, und ist damit auch abh\u00E4ngig von der Dotierung des Halbleiters. Detaillierte Beschreibungen hierzu finden sich in den Artikeln der beiden Kontaktformen."@de . . . . . . "\u56FA\u4F53\u7269\u7406\u5B66\u306B\u304A\u3044\u3066\u91D1\u5C5E-\u534A\u5C0E\u4F53\u63A5\u5408\u3068\u306F\u3001\u63A5\u5408\u306E\u4E00\u7A2E\u3067\u3001\u91D1\u5C5E\u3068\u534A\u5C0E\u4F53\u304C\u7DCA\u5BC6\u306B\u63A5\u89E6\u3059\u308B\u3002\u6700\u3082\u53E4\u3044\u5B9F\u7528\u7684\u306A\u534A\u5C0E\u4F53\u30C7\u30D0\u30A4\u30B9\u3067\u3042\u308B\u3002\u91D1\u5C5E-\u534A\u5C0E\u4F53\u63A5\u5408\u306F\u3001\u6574\u6D41\u4F5C\u7528\u304C\u3042\u308B\u3082\u306E\u3068\u7121\u3044\u3082\u306E\u306B\u5206\u985E\u3055\u308C\u308B\u3002\u6574\u6D41\u4F5C\u7528\u304C\u3042\u308B\u91D1\u5C5E-\u534A\u5C0E\u4F53\u63A5\u5408\u306F\u30B7\u30E7\u30C3\u30C8\u30AD\u30FC\u969C\u58C1\u3092\u5F62\u6210\u3057\u3066\u304A\u308A\u3001\u30B7\u30E7\u30C3\u30C8\u30AD\u30FC\u30C0\u30A4\u30AA\u30FC\u30C9\u3067\u7528\u3044\u3089\u308C\u308B\u3002\u6574\u6D41\u4F5C\u7528\u304C\u7121\u3044\u91D1\u5C5E-\u534A\u5C0E\u4F53\u63A5\u5408\u306F\u30AA\u30FC\u30DF\u30C3\u30AF\u30B3\u30F3\u30BF\u30AF\u30C8\u3068\u547C\u3070\u308C\u308B\u3002\uFF08\u6574\u6D41\u4F5C\u7528\u304C\u3042\u308B\u534A\u5C0E\u4F53-\u534A\u5C0E\u4F53\u63A5\u5408\u306Fpn\u63A5\u5408\u3068\u3057\u3066\u77E5\u3089\u308C\u308B\u3002\uFF09 \u30AA\u30FC\u30DF\u30C3\u30AF\u30B3\u30F3\u30BF\u30AF\u30C8\u3067\u306F\u96FB\u8377\u304C\u30C8\u30E9\u30F3\u30B8\u30B9\u30BF\u3068\u5916\u90E8\u56DE\u8DEF\u3068\u306E\u9593\u3092\u5BB9\u6613\u306B\u79FB\u52D5\u3067\u304D\u308B\u305F\u3081\u3001\u901A\u5E38\u306F\u30AA\u30FC\u30DF\u30C3\u30AF\u30B3\u30F3\u30BF\u30AF\u30C8\u304C\u671B\u307E\u308C\u308B\u3002\u3057\u304B\u3057\u30B7\u30E7\u30C3\u30C8\u30AD\u30FC\u30C0\u30A4\u30AA\u30FC\u30C9\u3001\u3001\u91D1\u5C5E-\u534A\u5C0E\u4F53\u96FB\u754C\u52B9\u679C\u30C8\u30E9\u30F3\u30B8\u30B9\u30BF\uFF08MOSFET\uFF09\u306A\u3069\u306F\u30B7\u30E7\u30C3\u30C8\u30AD\u30FC\u969C\u58C1\u304C\u7528\u3044\u3089\u308C\u3066\u3044\u308B\u3002"@ja . . "19497"^^ . . . . . . . . . . "In solid-state physics, a metal\u2013semiconductor (M\u2013S) junction is a type of electrical junction in which a metal comes in close contact with a semiconductor material. It is the oldest practical semiconductor device. M\u2013S junctions can either be rectifying or non-rectifying. The rectifying metal\u2013semiconductor junction forms a Schottky barrier, making a device known as a Schottky diode, while the non-rectifying junction is called an ohmic contact. (In contrast, a rectifying semiconductor\u2013semiconductor junction, the most common semiconductor device today, is known as a p\u2013n junction.) Metal\u2013semiconductor junctions are crucial to the operation of all semiconductor devices. Usually an ohmic contact is desired, so that electrical charge can be conducted easily between the active region of a transistor and the external circuitry.Occasionally however a Schottky barrier is useful, as in Schottky diodes, Schottky transistors, and metal\u2013semiconductor field effect transistors."@en . . . . "Metall-Halbleiter-Kontakt"@de . . . . . . . "Schottky\u2013Mott rule: As the materials are brought together, the bands in the silicon bend such that the silicon's work function \u03A6 matches the silver's. The bands retain their bending upon contact. This model predicts silver to have a very low Schottky barrier to n-doped silicon, making an excellent ohmic contact."@en . . . . . . . . . .