About: Metal–nitride–oxide–semiconductor transistor

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The metal–nitride–oxide–semiconductor or metal–nitride–oxide–silicon (MNOS) transistor is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) in which the oxide layer is replaced by a double layer of nitride and oxide. It is an alternative and supplement to the existing standard MOS technology, wherein the insulation employed is a nitride-oxide layer. It is used in non-volatile computer memory.

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  • The metal–nitride–oxide–semiconductor or metal–nitride–oxide–silicon (MNOS) transistor is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) in which the oxide layer is replaced by a double layer of nitride and oxide. It is an alternative and supplement to the existing standard MOS technology, wherein the insulation employed is a nitride-oxide layer. It is used in non-volatile computer memory. (en)
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  • The metal–nitride–oxide–semiconductor or metal–nitride–oxide–silicon (MNOS) transistor is a type of MOSFET (metal-oxide-semiconductor field-effect transistor) in which the oxide layer is replaced by a double layer of nitride and oxide. It is an alternative and supplement to the existing standard MOS technology, wherein the insulation employed is a nitride-oxide layer. It is used in non-volatile computer memory. (en)
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  • Metal–nitride–oxide–semiconductor transistor (en)
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