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- Low-level injection conditions for a p–n junction, in physics and electronics, refers to the state where the number of minority carriers generated is small compared to the majority carriers of the material. The semiconductor's majority-carrier concentration will remain (relatively) unchanged, while the minority-carrier concentration sees a large increase. In this condition minority-carrier recombination rates are linear. The following equation must be satisfied for a semiconductor under carrier injection conditions: where is the number of electrons, is the excess carriers injected into the semiconductor, and is the equilibrium concentration of electrons in the semiconductor The following relation must also be true, because for every electron injected a hole must also be created to keep a balance of charge: The assumption of low-level injection can be made regarding an n-type semiconductor, which affects the equations in the following way: Therefore and . In comparison, a semiconductor in means that the number of generated carriers is large compared to the background doping density of the material. In this condition minority carrier recombination rates are proportional to the number of carriers squared. (en)
- 小注入（英語：low level injection）是形成PN结的一种工作条件。在N型半导体中，当注入半导体材料的非平衡电子（通过光照注入、电注入等方法引入的两种载流子——电子、空穴总是成对出现）的浓度小于平衡时导带中电子的浓度时，我们称这种方法为小注入。对于P型半导体，则需要比较非平衡空穴与平衡时的空穴的浓度。在小注入的情况下，多数载流子的复合率为线性。 (zh)
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- 小注入（英語：low level injection）是形成PN结的一种工作条件。在N型半导体中，当注入半导体材料的非平衡电子（通过光照注入、电注入等方法引入的两种载流子——电子、空穴总是成对出现）的浓度小于平衡时导带中电子的浓度时，我们称这种方法为小注入。对于P型半导体，则需要比较非平衡空穴与平衡时的空穴的浓度。在小注入的情况下，多数载流子的复合率为线性。 (zh)
- Low-level injection conditions for a p–n junction, in physics and electronics, refers to the state where the number of minority carriers generated is small compared to the majority carriers of the material. The semiconductor's majority-carrier concentration will remain (relatively) unchanged, while the minority-carrier concentration sees a large increase. In this condition minority-carrier recombination rates are linear. The following equation must be satisfied for a semiconductor under carrier injection conditions: Therefore and . (en)
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- Low-level injection (en)
- 小注入 (zh)
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