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Plasma-immersion ion implantation (PIII) or pulsed-plasma doping (pulsed PIII) is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to implant it with suitable dopants. The electrode is a cathode for an , while it is an anode for an . Plasma can be generated in a suitably designed vacuum chamber with the help of various plasma sources such as electron cyclotron resonance plasma source which yields plasma with the highest ion density and lowest contamination level, source, capacitively coupled plasma source, inductively coupled plasma source, DC glow discharge and metal vapor arc (for metall

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  • Plasma-Immersions-Ionenimplantation (de)
  • Plasma-immersion ion implantation (en)
  • 等离子体浸没离子注入 (zh)
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  • 等离子体浸没离子注入（PIII）或脉冲等离子掺杂（脉冲PIII）是通过应用或纯，将等离子体中的加速离子作为掺杂物注入合适的基体或置有电极的半导体晶片的靶的一种表面改性技术。电极对于是阴极，对于是阳极。等离子体可在设计好的中以不同的等离子体源产生，如可产生最高离子密度和最低污染水平的等离子体源，及体源，源，电感耦合等离子体源，和（对金属物质来说）。真空室可分为两种-二极式和式，前者电源应用于基体而后者应用于。 (zh)
  • Bei der Plasma-Immersions-Ionenimplantation handelt es sich um ein Vakuumverfahren zur meist großflächigen Implantation von Ionen in Festkörperoberflächen. Es ist daher eng verwandt mit der Ionenimplantation. Das wesentlichste Merkmal ist das direkte Einbringen der zu behandelnden Materialien in ein Plasma, daher der Begriff „Immersion“. Häufig werden für das Verfahren unterschiedliche synonyme Begriffe oder Abkürzungen verwendet, von denen einige im Folgenden aufgelistet sind: (de)
  • Plasma-immersion ion implantation (PIII) or pulsed-plasma doping (pulsed PIII) is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to implant it with suitable dopants. The electrode is a cathode for an , while it is an anode for an . Plasma can be generated in a suitably designed vacuum chamber with the help of various plasma sources such as electron cyclotron resonance plasma source which yields plasma with the highest ion density and lowest contamination level, source, capacitively coupled plasma source, inductively coupled plasma source, DC glow discharge and metal vapor arc (for metall (en)
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  • http://commons.wikimedia.org/wiki/Special:FilePath/Diode-type_Plasma_Immersion_Ion_Implanter_(diagram).jpg
  • http://commons.wikimedia.org/wiki/Special:FilePath/PiiiD_Knee_AgTarget_IOT.jpg
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  • Bei der Plasma-Immersions-Ionenimplantation handelt es sich um ein Vakuumverfahren zur meist großflächigen Implantation von Ionen in Festkörperoberflächen. Es ist daher eng verwandt mit der Ionenimplantation. Das wesentlichste Merkmal ist das direkte Einbringen der zu behandelnden Materialien in ein Plasma, daher der Begriff „Immersion“. Häufig werden für das Verfahren unterschiedliche synonyme Begriffe oder Abkürzungen verwendet, von denen einige im Folgenden aufgelistet sind: * Plasma-Immersions-Ionenimplantation, kurz PIII, P3I oder PI³; im Englischen spricht man von p-triple-i oder p-i-cube * Plasma-basierte Ionenimplantation, PBII * Plasmaionenimplantation, kurz PII oder PI² * engl. plasma ion immersion processing, PIIP * Wenn das Verfahren in Kombination mit einer gleichzeitigen Schichtabscheidung angewandt wird (siehe PVD und CVD), dann wird häufig ein „&D“ (engl. … and deposition) angehängt, also zum Beispiel PIII&D. (de)
  • Plasma-immersion ion implantation (PIII) or pulsed-plasma doping (pulsed PIII) is a surface modification technique of extracting the accelerated ions from the plasma by applying a high voltage pulsed DC or pure DC power supply and targeting them into a suitable substrate or electrode with a semiconductor wafer placed over it, so as to implant it with suitable dopants. The electrode is a cathode for an , while it is an anode for an . Plasma can be generated in a suitably designed vacuum chamber with the help of various plasma sources such as electron cyclotron resonance plasma source which yields plasma with the highest ion density and lowest contamination level, source, capacitively coupled plasma source, inductively coupled plasma source, DC glow discharge and metal vapor arc (for metallic species). The vacuum chamber can be of two types - diode and triode type depending upon whether the power supply is applied to the substrate as in the former case or to the perforated grid as in the latter. (en)
  • 等离子体浸没离子注入（PIII）或脉冲等离子掺杂（脉冲PIII）是通过应用或纯，将等离子体中的加速离子作为掺杂物注入合适的基体或置有电极的半导体晶片的靶的一种表面改性技术。电极对于是阴极，对于是阳极。等离子体可在设计好的中以不同的等离子体源产生，如可产生最高离子密度和最低污染水平的等离子体源，及体源，源，电感耦合等离子体源，和（对金属物质来说）。真空室可分为两种-二极式和式，前者电源应用于基体而后者应用于。 (zh)
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