About: Hot-carrier injection

Facets (new session)
Description
Metadata
Settings
- Rule:
- Inverse Functional Properties:
- "Same As":

About: Hot-carrier injection Goto Sponge NotDistinct Permalink

An Entity of Type : yago:Whole100003553, within Data Space : dbpedia.org associated with source document(s)
QRcode icon

http://dbpedia.org/describe/?url=http%3A%2F%2Fdbpedia.org%2Fresource%2FHot-carrier_injection

Hot carrier injection (HCI) is a phenomenon in solid-state electronic devices where an electron or a “hole” gains sufficient kinetic energy to overcome a potential barrier necessary to break an interface state. The term "hot" refers to the effective temperature used to model carrier density, not to the overall temperature of the device. Since the charge carriers can become trapped in the gate dielectric of a MOS transistor, the switching characteristics of the transistor can be permanently changed. Hot-carrier injection is one of the mechanisms that adversely affects the reliability of semiconductors of solid-state devices.

Attributes	Values
rdf:type	yago:WikicatChargeCarriers yago:WikicatSemiconductorDevices yago:WikicatSolid-stateComputerStorageMedia yago:Artifact100021939 yago:Carrier109897696 yago:CausalAgent100007347 yago:Circuit103033362 yago:ComputerCircuit103084420 yago:Conductor103088707 yago:Device103183080 yago:ElectricalDevice103269401 yago:Instrumentality103575240 yago:IntegratedCircuit103577090 yago:LivingThing100004258 yago:Medium106254669 yago:Object100002684 yago:Organism100004475 yago:Person100007846 yago:PhysicalEntity100001930 yago:WikicatIntegratedCircuits yago:YagoLegalActor yago:YagoLegalActorGeo disease yago:SemiconductorDevice104171831 yago:StorageMedium106263762 yago:Traveler109629752 yago:Whole100003553
rdfs:label	Injecció de portadors calents (ca) Injektion heißer Ladungsträger (de) Hot-carrier injection (en) Hot carriers injection (it) ホットキャリア注入 (ja) Инжекция горячих носителей (ru) 热载流子注入 (zh) Інжекція носіїв заряду (uk)
rdfs:comment	Hot carrier injection (HCI) is a phenomenon in solid-state electronic devices where an electron or a “hole” gains sufficient kinetic energy to overcome a potential barrier necessary to break an interface state. The term "hot" refers to the effective temperature used to model carrier density, not to the overall temperature of the device. Since the charge carriers can become trapped in the gate dielectric of a MOS transistor, the switching characteristics of the transistor can be permanently changed. Hot-carrier injection is one of the mechanisms that adversely affects the reliability of semiconductors of solid-state devices. (en) In elettronica, hot carriers injection, spesso abbreviato con l'acronimo HCI, è il fenomeno tramite il quale nei dispositivi elettronici a semiconduttore o a stato solido gli elettroni e le lacune acquistano sufficiente energia cinetica per oltrepassare la barriera di potenziale che si instaura nell'interfaccia tra due materiali. (it) 固体電子デバイスのホットキャリア注入とは、電子や正孔が運動エネルギーを得てポテンシャル障壁に打ち勝ち、界面状態を壊す現象のこと。「ホット」という言葉はモデル化したキャリア密度に対する実効的な温度のことを指し、デバイス全体の温度のことでは無い。電荷キャリアはMOSFETのゲート絶縁膜にトラップされるため、トランジスタのスイッチング特性は永久的に変わる。ホットキャリア注入は固体デバイスの信頼性が悪化するメカニズムの一つである。 (ja) Інже́кція (лат. injectio — впускання) (рос. инжекция; англ. injection; нім. Injektion f, Einspritzung f) — Процес переходу носіїв заряду через p-n перехід з подальшою рекобінацією в область напівпровідника, де ці носії заряду є неосновними. (uk) Die Injektion heißer Ladungsträger (auch heiße Ladungsträgerinjektion, englisch hot carrier injection, HCI) ist ein Phänomen in elektronischen , bei dem ein Elektron oder ein Defektelektron (Loch) genügend kinetische Energie gewinnt, um eine Potentialbarriere zu überwinden, die notwendig ist, um einen Grenzflächenzustand zu durchbrechen. Der Begriff „heiß“ bezieht sich auf die effektive Temperatur, die zur Modellierung der Ladungsträgerdichte verwendet wird, und nicht auf die Gesamttemperatur des Bauelements. Da die Ladungsträger im Gate-Dielektrikum eines MOS-Feldeffekttransistors (MOSFET) gefangen werden können, können die Schalteigenschaften des Transistors dauerhaft verändert werden. Die HCI ist einer der Mechanismen, die die Zuverlässigkeit von Halbleitern in Festkörperbauelementen be (de) Инже́кция горя́чих носи́телей (англ. hot-carrier injection) — явление в приборах твердотельной электроники, при котором электроны или дырки переходят из одной области прибора в другую, являясь или становясь хотя бы в одной из этих областей. Смысл слова «горячие» здесь в том, что энергетическое распределение электронов или дырок приближённо описывается произведением плотности состояний на функцию Ферми с более высокой, до тысяч кельвин, эффективной температурой, чем температура прибора. (ru) 热载流子注入（英語：Hot carrier injection, HCI）是固态电子器件中发生一个现象，当电子或空穴获得足够的动能后，它们就能够突破势垒的约束。这里“热”这个术语是指用来对载流子密度进行建模的有效温度，而非器件本身的温度。由于载流子被束缚在金屬氧化物半導體場效電晶體的栅极电介质层中，晶体管的开关性能可以被永久地改变，热载流子注入是一种可能对半导体器件可靠性产生负面影响的机制熱載子效應的原理: 當MOSFET的通道長L很小時, 也就是short-channel(短通道)元件此時, 靠近Drain端的橫向電場 E≒ Vds/L 會是很大 MOSFET的通道載子, NMOS的電子或PMOS的電洞, 從Source端跑向Drain端時, 受到上述橫向電場 E的作用而獲得能量, 稱為熱載子(Hot carrier). 熱載子所獲得能量如果夠大, 將產生碰撞游離(impact ionization), 就會生成很多的電子-電洞對(electron-hole pair). 種種上面提到的結果, 都會對MOSFET元件的可靠度特性產生影響, 降低其使用的壽命. (zh)
dcterms:subject	Charge carriers Integrated circuits Electric and magnetic fields in matter Semiconductors Semiconductor device defects
Wikipage page ID	7084895 (xsd:integer)
Wikipage revision ID	1005295687 (xsd:integer)
Link from a Wikipage to another Wikipage	Proton Electromigration Electron hole SOI MOSFET Reliability (semiconductor) Valence band Velocity saturation Integrated circuit Conduction band Gate dielectric Noise margin Electron Gamma ray MOSFET Silicon dioxide Time-dependent gate oxide breakdown Lattice scattering EPROM Flash memory Charge carriers Non-volatile memory Integrated circuits Electric and magnetic fields in matter Semiconductors Kinetic energy Threshold voltage Boolean-valued function Metal–Oxide–Semiconductor Field-Effect Transistor Institute of Electrical and Electronics Engineers Semiconductor device defects X-ray Silicon on insulator Silicon Electron volt Radiation hardening Parasitic capacitance Subthreshold slope Stress migration Transistor aging Fermi function Solid state (electronics) Fowler–Nordheim tunneling Floating gate Potential barrier Negative bias temperature instability dbr:Carrier_trap
Link from a Wikipage to an external page	http://www.irps.org/ https://web.archive.org/web/20090221023515/http:/www.siliconfareast.com/hotcarriers.htm https://web.archive.org/web/20090224160225/http:/www.siliconfareast.com/
sameAs	Hot-carrier injection Hot-carrier injection

Faceted Search & Find service v1.17_git139 as of Feb 29 2024

Alternative Linked Data Documents: ODE Content Formats:

RDF

ODATA

Microdata

About

OpenLink Virtuoso version 08.03.3330 as of Mar 19 2024, on Linux (x86_64-generic-linux-glibc212), Single-Server Edition (378 GB total memory, 49 GB memory in use)
Data on this page belongs to its respective rights holders.
Virtuoso Faceted Browser Copyright © 2009-2024 OpenLink Software