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Extreme ultraviolet lithography (also known as EUV or EUVL) is an optical lithography technology used in steppers, machines that make integrated circuits (ICs) for computers and other electronic devices. It uses a range of extreme ultraviolet (EUV) wavelengths, roughly spanning a 2% FWHM bandwidth about 13.5 nm, to produce a pattern by exposing reflective photomask to UV light which gets reflected onto a substrate covered by photoresist. It is widely applied in semiconductor device fabrication process.

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  • الأشعة فوق البنفسجية المتطرفة (ar)
  • Fotolitografia ultraviolada extrema (electrònica) (ca)
  • EUV-Lithografie (de)
  • Litografía ultravioleta extrema (es)
  • Extreme ultraviolet lithography (en)
  • Lithographie extrême ultraviolet (fr)
  • Litografia ultravioletta estrema (it)
  • 極端紫外線リソグラフィ (ja)
  • Фотолитография в глубоком ультрафиолете (ru)
  • 极紫外光刻 (zh)
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  • Fotolitografia ultraviolada extrema (també coneguda per EUV o EUVL), en electrònica, és una tecnologia de fotolitografia de pròxima generació que empra llum longitud d'ona d'ultraviolat extrem (radiació ultraviolada d'alta energia) de 13,5 nm. La tecnologia EUVL està en fase de desenvolupament i estarà en producció massiva cap al 2020. EUVL és necessària per a continuar augmentant la densitat de transistors segons la llei de Moore. (ca)
  • EUV-Lithografie (auch kurz EUVL) ist ein Fotolithografie-Verfahren, das elektromagnetische Strahlung mit einer Wellenlänge von 13,5 nm (91,82 eV) nutzt, sogenannte extrem ultraviolette Strahlung (englisch extreme ultra violet, EUV).EUV-Lithografie ermöglicht es, nach Ausreizen bisheriger Belichtungsmethoden die Strukturverkleinerung in der Halbleiterindustrie fortzusetzen, um kleinere, effizientere und schnellere integrierte Schaltkreise herstellen zu können. (de)
  • La lithographie extrême ultraviolet ou lithographie EUV est un procédé de photolithographie assez semblable aux procédés de lithographie classiques actuels. Il utilise un rayonnement ultraviolet (UV) d'une longueur d'onde de l'ordre de dix à quinze nanomètres (le rayonnement EUV avoisine donc la gamme des rayons X-mous), en remplaçant les objectifs (ou masques dits « en transmission ») par une série de miroirs de précision (exemple des masques dits « en réflexion »). Il permet ainsi une résolution inférieure à 45 nm. C’est une technologie prometteuse pour le développement industriel des gravures inférieures à 10 nm. (fr)
  • 極端紫外線リソグラフィ (Extreme ultraviolet lithography、略称:EUVリソグラフィ または EUVL) は、、波長13.5 nmにて露光する次世代露光技術である。 (ja)
  • La Litografia ultravioletta estrema o EUVL (dall’inglese Extreme ultraviolet lithography) è una tecnica di litografia che sfrutta un fascio luminoso dell’estremo ultravioletto a lunghezza d’onda pari a 13,5 nm per incidere un wafer di semiconduttore (Silicio). L’introduzione di questa tecnologia ha permesso di trovare posto per un numero sempre maggiore di transistor sui chip, incrementandone sensibilmente le prestazioni. Sul mercato attuale alcune aziende sono dotate di questa tecnologia, consentendo processi di produzione litografica con risoluzione di 7nm. (it)
  • Фотолитография в глубоком ультрафиолете (Extreme ultraviolet lithography, EUV, EUVL — экстремальная ультрафиолетовая литография) — вид фотолитографии в наноэлектронике. Считается одним из вариантов . Использует свет ультрафиолетового диапазона с длиной волны около 13,5 нм, т.е. почти рентгеновское излучение. (ru)
  • 極紫外光微影、超紫外線平版印刷術(英語:Extreme ultraviolet lithography,亦稱EUV或EUVL)是一种使用極紫外光(EUV)波長的技術,目前使用7納米,2020年得到廣泛應用 。 透過高能量、波長短的光源,將光罩上的電路圖案轉印到晶圓的光阻劑塗層。EUV光源波長比目前DUV()的光源波長短,約為15分之1,因此能使用於線距更小電路圖案的曝光上。然而EUV光罩與傳統的光罩截然不同,當採用13.5nm波長的極紫外光微影技術時,所有的光罩材料都是不透光的,因此具複合多塗層反射鏡的光罩可將電路圖案反射到晶圓上。這種多層膜EUV光罩一方面可維持光罩的反射率,但另一方面會影響臨界線寬、輪廓、刻線邊緣粗糙度、選擇性和缺陷控制方面,而造成獨特的蝕刻效果。 (zh)
  • الأشعة فوق البنفسجية المتطرفة (بالإنجليزية: Extreme ultraviolet lithography)‏ (المعروفة أيضاً باسم EUV أو EUVL) هي تقنية طباعة حجرية ضوئية باستخدام مجموعة من الأطوال الموجية فوق البنفسجية المتطرفة ، والتي تمتد تقريباً على نطاق واسع يبلغ 2% من FWM حوالي 13.5 نانومتر. اعتبارا من عام 2020 ، سامسونغ و TSMC التايوانية هي الشركات الوحيدة التي استخدمت تقنية 5 نانومتر. * بوابة تقانة النانو (ar)
  • Extreme ultraviolet lithography (also known as EUV or EUVL) is an optical lithography technology used in steppers, machines that make integrated circuits (ICs) for computers and other electronic devices. It uses a range of extreme ultraviolet (EUV) wavelengths, roughly spanning a 2% FWHM bandwidth about 13.5 nm, to produce a pattern by exposing reflective photomask to UV light which gets reflected onto a substrate covered by photoresist. It is widely applied in semiconductor device fabrication process. (en)
  • La litografía ultravioleta extrema (también conocida como EUV, UVE, EUVL o LUVE) es una tecnología de litografía que utiliza una gama de longitudes de onda ultravioleta extrema (UVE), que abarca aproximadamente un ancho de banda de 2 % FWHM de aproximadamente 13,5 nm.​​​​ (es)
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  • http://commons.wikimedia.org/wiki/Special:FilePath/30_nm_pitch_different_dipoles_different_shifts.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/36_nm_pitch_2-bar_CD_delta_vs_focus.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/64_nm_pitch_EUV_shot_noise.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/Assist_feature_OPC.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/Atomic_hydrogen_in_multilayer.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/Defocus_pattern_shift_vs_wavelength.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/EUVL_printable_defects.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/EUV_H-V_Best_Focus.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/EUV_High-NA_stochastic_sidelobes.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/EUV_SMO_effectiveness_vs._pitch.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/EUV_Stochastic_Hot_Spots.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/EUV_attPSM_near_field_phase.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/EUV_photoelectrons_and_secondaries_(vector).svg
  • http://commons.wikimedia.org/wiki/Special:FilePath/EUV_pupil_wavelength_dependence.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/Extreme_ultraviolet_lithography_tool.jpg
  • http://commons.wikimedia.org/wiki/Special:FilePath/H_and_V_shadowing_across_EUV_slit.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/High-NA_EUV_forbidden_illumination_combinations.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/Impact_of_electron_spread_function.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/Line_end_stochastic.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/NXE3400_TPT_vs_dose.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/Outgassing_contamination_vs_dose.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/PFR_loss_of_productivity_at_smaller_pitch.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/Photoelectron_trajectories_vs_dose.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/Rotated_EUV_illumination_through_slit.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/Secondary_electron_blur_vs_dose.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/Via_Triple_Patterning_for_EUV.png
  • http://commons.wikimedia.org/wiki/Special:FilePath/Electron_travel_(Monte_Carlo).png
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