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Extreme ultraviolet lithography (also known as EUV or EUVL) is a lithography technology using a range of extreme ultraviolet (EUV) wavelengths, roughly spanning a 2% FWHM bandwidth about 13.5 nm. While EUV technology is available for mass production, fewer than fifty machines worldwide are capable of producing wafers using the technique; by comparison, as of 2013, over 200 Deep Ultraviolet Lithography (DUV) immersion systems were already deployed. As of Q3 2019, 5.7 million wafers have been exposed on EUV production tools; 1.7 million wafers were exposed in Q1-Q3 alone, while the number of tools increased from 31 to 45 (on the order of 10 WPH per tool). Issues that make EUV adoption difficult are tool costs (ASML's EUV scanners can cost up to US$120 Million), tool uptime and stochastic phe

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  • Fotolitografia ultraviolada extrema (electrònica)
  • EUV-Lithografie
  • Extreme ultraviolet lithography
  • Litografía ultravioleta extrema
  • Lithographie extrême ultraviolet
  • Litografia ultravioletta estrema
  • 極端紫外線リソグラフィ
  • Фотолитография в глубоком ультрафиолете
  • 极紫外光刻
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  • Fotolitografia ultraviolada extrema (també coneguda per EUV o EUVL), en electrònica, és una tecnologia de fotolitografia de pròxima generació que empra llum longitud d'ona d'ultraviolat extrem (radiació ultraviolada d'alta energia) de 13,5 nm. La tecnologia EUVL està en fase de desenvolupament i estarà en producció massiva cap al 2020. EUVL és necessària per a continuar augmentant la densitat de transistors segons la llei de Moore.
  • EUV-Lithografie (auch kurz EUVL) ist ein Fotolithografie-Verfahren, das elektromagnetische Strahlung mit einer Wellenlänge von 13,5 nm (91,82 eV) nutzt, sogenannte extrem ultraviolette Strahlung (englisch extreme ultra violet, EUV).Dies soll es ermöglichen, auch zukünftig die Strukturverkleinerung in der Halbleiterindustriefortzusetzen, um kleinere, effizientere, schnellere und günstigere integrierte Schaltkreiseherstellen zu können.
  • La litografía ultravioleta extrema (también conocida como UVE o EUVL) es una tecnología de en la fabricación de circuitos integrados que utiliza una longitud de onda de ultravioleta extrema (UVE), que actualmente se espera que sea de 13,5 nm. UVE se está desarrollando actualmente para un uso de gran volumen para 2020.​​​​
  • La lithographie extrême ultraviolet ou lithographie EUV est un procédé de photolithographie assez semblable aux procédés de lithographie classiques actuels. Il utilise un rayonnement ultraviolet (UV) d'une longueur d'onde de l'ordre de 10 à 15 nanomètres (le rayonnement EUV avoisine donc la gamme des rayons X-mous), en remplaçant les objectifs (ou masques dits « en transmission ») par une série de miroirs de précision (exemple des masques dits « en réflexion »). Il permet ainsi une résolution inférieure à 45 nm. C’est une technologie prometteuse pour le développement industriel des gravures inférieures à 10 nm.
  • La Litografia ultravioletta estrema o EUV o EUVL acronimi inglesi per Extreme ultraviolet lithography è una tecnologia di prossima generazione di litografia che usa lunghezze d'onda nell'ultravioletto estremo (EUV), attualmente atteso per i 13,5 nm. EUV è attualmente sviluppato per essere utilizzato Intel, GlobalFoundries e Samsung per i 7 nm, da TSMC per i 5 nm e da per i 14 nm.
  • 極端紫外線リソグラフィ (Extreme ultraviolet lithography、略称:EUVリソグラフィ または EUVL) は、極端紫外線、波長13.5 nmにて露光する次世代リソグラフィ 技術である。
  • Фотолитография в глубоком ультрафиолете (Extreme ultraviolet lithography, EUV, EUVL — экстремальная ультрафиолетовая литография) — вид фотолитографии в наноэлектронике. Считается одним из вариантов . Использует свет ультрафиолетового диапазона с длиной волны около 13,5 нм.
  • 極紫外光微影、超紫外線平版印刷術(英語:Extreme ultraviolet lithography,亦稱EUV或EUVL)是一种使用極紫外(EUV)波長的技術,目前預期使用13.5納米,預計將於2020年得到廣泛應用用 。 透過高能量、波長短的光源,將電路圖案轉印到晶圓。EUV光源波長比目前深紫外線的光源波長短少約15 倍,因此能達到持續將線寬尺寸縮小的目的。然而EUV光罩與傳統的光罩截然不同,當採用13.5nm波長的極紫外光微影技術時,所有的光罩材料都是不透光的,因此具複合多塗層反射鏡的光罩可將電路圖案反射到晶圓上。這種多層膜EUV光罩一方面可維持光罩的反射率,但另一方面會在臨界線寬、輪廓、刻線邊緣粗糙度、選擇性和缺陷控制方面造成獨特的蝕刻晚了10多年。
  • Extreme ultraviolet lithography (also known as EUV or EUVL) is a lithography technology using a range of extreme ultraviolet (EUV) wavelengths, roughly spanning a 2% FWHM bandwidth about 13.5 nm. While EUV technology is available for mass production, fewer than fifty machines worldwide are capable of producing wafers using the technique; by comparison, as of 2013, over 200 Deep Ultraviolet Lithography (DUV) immersion systems were already deployed. As of Q3 2019, 5.7 million wafers have been exposed on EUV production tools; 1.7 million wafers were exposed in Q1-Q3 alone, while the number of tools increased from 31 to 45 (on the order of 10 WPH per tool). Issues that make EUV adoption difficult are tool costs (ASML's EUV scanners can cost up to US$120 Million), tool uptime and stochastic phe
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