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The anomalous photovoltaic effect (APE), also called the bulk photovoltaic effect in certain cases, is a type of a photovoltaic effect which occurs in certain semiconductors and insulators. The "anomalous" refers to those cases where the photovoltage (i.e., the open-circuit voltage caused by the light) is larger than the band gap of the corresponding semiconductor. In some cases, the voltage may reach thousands of volts. There are several situations in which APE can arise.

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  • Anomalous photovoltaic effect
  • 反常光生伏特效应
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  • 反常光生伏特效应(英語:Anomalous photovaltaic effect)指从热力学观点,半导体器件所能产生的最大光生应等于它的能带隙的宽度电压。但有些半导体和绝缘体,如ZnS,当用紫外光照射时,能产生开路电压比它的能带隙宽高的光生伏特电压.这种现象称为反常光生伏特效应。 这种效应所产生的都是指开路电压较高,有些情况下,能产生高达上千伏;但在闭路有电流时,则能产生很小的功率。因此,能产生反常光生伏特效应的材料,目前还都不能实用。 什麽材料才能发生反常光生伏特效应?根据大量数据总结,梅兹提出假设;只有材料内含有一些简单的单元,每单元产生的光生伏特电压经串联,使总电压升高的材料,才能成为具有反常光生伏特效应的材料。根据梅兹的假设可知,下列三种材料能产生反常光生伏特效应: 1. * 多晶材料,每一微晶可视为一光伏特电池;整个多晶的微晶电压串联起来的电压就可具有比它的能带隙宽高的电压。 2. * 某些铁电材料能发展成铁电条状畴;每个畴也可视为一个光伏特电池,它们串起来也可获得较高的光生伏特电压。 3. * 具有非中心对称结构的单晶可产生巨大的光生伏特电压。这种情况特别称为体光生伏特效应。
  • The anomalous photovoltaic effect (APE), also called the bulk photovoltaic effect in certain cases, is a type of a photovoltaic effect which occurs in certain semiconductors and insulators. The "anomalous" refers to those cases where the photovoltage (i.e., the open-circuit voltage caused by the light) is larger than the band gap of the corresponding semiconductor. In some cases, the voltage may reach thousands of volts. There are several situations in which APE can arise.
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  • The anomalous photovoltaic effect (APE), also called the bulk photovoltaic effect in certain cases, is a type of a photovoltaic effect which occurs in certain semiconductors and insulators. The "anomalous" refers to those cases where the photovoltage (i.e., the open-circuit voltage caused by the light) is larger than the band gap of the corresponding semiconductor. In some cases, the voltage may reach thousands of volts. Although the voltage is unusually high, the short-circuit current is unusually low. Overall, materials that exhibit the anomalous photovoltaic effect have very low power generation efficiencies, and are never used in practical power-generation systems. There are several situations in which APE can arise. First, in polycrystalline materials, each microscopic grain can act as a photovoltaic. Then the grains add in series, so that the overall open-circuit voltage across the sample is large, potentially much larger than the bandgap. Second, in a similar manner, certain ferroelectric materials can develop stripes consisting of parallel ferroelectric domains, where each domain acts like a photovoltaic and each domain wall acts like a contact connecting the adjacent photovoltaics (or vice versa). Again, domains add in series, so that the overall open-circuit voltage is large. Third, a perfect single crystal with a non-centrosymmetric structure can develop a giant photovoltage. This is specifically called the bulk photovoltaic effect, and occurs because of non-centrosymmetry. Specifically, the electron processes—photo-excitation, scattering, and relaxation—occur with different probabilities for electron motion in one direction versus the opposite direction.
  • 反常光生伏特效应(英語:Anomalous photovaltaic effect)指从热力学观点,半导体器件所能产生的最大光生应等于它的能带隙的宽度电压。但有些半导体和绝缘体,如ZnS,当用紫外光照射时,能产生开路电压比它的能带隙宽高的光生伏特电压.这种现象称为反常光生伏特效应。 这种效应所产生的都是指开路电压较高,有些情况下,能产生高达上千伏;但在闭路有电流时,则能产生很小的功率。因此,能产生反常光生伏特效应的材料,目前还都不能实用。 什麽材料才能发生反常光生伏特效应?根据大量数据总结,梅兹提出假设;只有材料内含有一些简单的单元,每单元产生的光生伏特电压经串联,使总电压升高的材料,才能成为具有反常光生伏特效应的材料。根据梅兹的假设可知,下列三种材料能产生反常光生伏特效应: 1. * 多晶材料,每一微晶可视为一光伏特电池;整个多晶的微晶电压串联起来的电压就可具有比它的能带隙宽高的电压。 2. * 某些铁电材料能发展成铁电条状畴;每个畴也可视为一个光伏特电池,它们串起来也可获得较高的光生伏特电压。 3. * 具有非中心对称结构的单晶可产生巨大的光生伏特电压。这种情况特别称为体光生伏特效应。
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