Advanced-Random Access Memory (RAM) is a type of dynamic random-access memory (DRAM) based on single-transistor capacitor-less cells. A-RAM was invented in 2009 at the University of Granada (UGR), in Spain, in collaboration with the Centre National de la Recherche Scientifique (CNRS), in France. It was conceived by Noel Rodriguez (UGR), Francisco Gamiz (UGR) and Sorin Cristoloveanu (CNRS). A-RAM is compatible with single-gate silicon on insulator (SOI), double-gate, FinFETs and multiple-gate field-effect transistors (MuFETs).
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| - Advanced-Random Access Memory (RAM) is a type of dynamic random-access memory (DRAM) based on single-transistor capacitor-less cells. A-RAM was invented in 2009 at the University of Granada (UGR), in Spain, in collaboration with the Centre National de la Recherche Scientifique (CNRS), in France. It was conceived by Noel Rodriguez (UGR), Francisco Gamiz (UGR) and Sorin Cristoloveanu (CNRS). A-RAM is compatible with single-gate silicon on insulator (SOI), double-gate, FinFETs and multiple-gate field-effect transistors (MuFETs). (en)
- A-RAM (Advanced-Random Access Memory) es un tipo de memoria DRAM basada en celdas de un solo transistor. Esta tecnología ha sido inventada en la Universidad de Granada (España) en colaboración con el Centre National de la Recherche Scientifique, CNRS (Francia). (es)
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| - Advanced-Random Access Memory (RAM) is a type of dynamic random-access memory (DRAM) based on single-transistor capacitor-less cells. A-RAM was invented in 2009 at the University of Granada (UGR), in Spain, in collaboration with the Centre National de la Recherche Scientifique (CNRS), in France. It was conceived by Noel Rodriguez (UGR), Francisco Gamiz (UGR) and Sorin Cristoloveanu (CNRS). A-RAM is compatible with single-gate silicon on insulator (SOI), double-gate, FinFETs and multiple-gate field-effect transistors (MuFETs). The conventional 1-transistor + 1-capacitor DRAM is extensively used in the semiconductor industry for manufacturing high-density dynamic memories. In 2009, the researchers thought that in manufacturing processes with features smaller than 45 nm, the DRAM industry would need to avoid the miniaturization issue of the memory-cell capacitor. The 1T-DRAM family of memories, including A-RAM, replaced the storage capacitor for the floating body of SOI transistors to store the charge. The universities obtained at least one patent on the technology, and tried to license it in 2010. The University of Granada ran a web site promoting the technology, updated through 2010. A version called A2RAM was demonstrated in 2012. (en)
- A-RAM (Advanced-Random Access Memory) es un tipo de memoria DRAM basada en celdas de un solo transistor. Esta tecnología ha sido inventada en la Universidad de Granada (España) en colaboración con el Centre National de la Recherche Scientifique, CNRS (Francia). La memoria A-RAM, a diferencia de las memorias DRAM convencionales, no necesita de ningún elemento extrínseco de almacenamiento de la información (condensador de almacenamiento). Cada bit se almacena en un transistor especialmente diseñado. A medida que la tecnología de circuitos semiconductores evolucione hacia nodos por debajo de los 45nm [1], es de esperar que la tecnología convencional de almacenamiento no-volátil DRAM encuentre muy limitada su capacidad de escalado. Alternativamente se han propuesto nuevos conceptos de memoria basados en los efectos de cuerpo flotante de los transistores de silicio-sobre-aislante (Silicon-on-insulator). Estas memorias conocidas como memorias de un solo transistor (1T-DRAM) incluyen a las tecnologías A-RAM, TT-RAM y Z-RAM [2]. (es)
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