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SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon",is a cross sectional structure of MOSFET (metal-oxide-semiconductor field-effect transistor), realized by P.C.Y. Chen of Fairchild Camera and Instrument in 1977. This structure is often used for non-volatile memories, such as EEPROM and flash memories. It is sometimes used for TFT LCD displays.It is one of CTF (charge trap flash) variants. It is distinguished from traditional non-volatile memory structures by the use of silicon nitride (Si3N4 or Si9N10) instead of "polysilicon-based FG (floating-gate)" for the charge storage material.A further variant is "SHINOS" ("silicon"—"hi-k"—"nitride"—"oxide"—"silicon"), which is substituted

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rdf:type	company yago:Abstraction100002137 yago:Act100030358 yago:Activity100407535 yago:Application100949134 yago:Event100029378 yago:Occupation100582388 yago:Profession100609953 yago:PsychologicalFeature100023100 yago:YagoPermanentlyLocatedEntity yago:Technology100949619 yago:Use100947128 yago:WikicatEmergingTechnologies
rdfs:label	SONOS (ca) SONOS (en) SONOS (sv) SONOS (zh)
rdfs:comment	SONOS är en typ av icke-flyktigt minne. Förkortningen står för "Silicon-Oxide-Nitride-Oxide-Silicon", det vill säga kisel-oxid-nitrid-oxid-kisel. SONOS-minnen är nära släkt med flashminnen, men skiljer sig dock genom att utnyttja kiselnitrid (Si3N4) för lagring av laddning, istället för flashminnenas polykristallina kisel. Denna datorminne-relaterade artikel saknar väsentlig information. Du kan hjälpa till genom att lägga till den. (sv) SONOS，是硅-氧化物-氮化物-氧化物-硅（英語：Silicon-Oxide-Nitride-Oxide-Silicon）的英语首字母缩写，是一种和闪存联系较为紧密的。它与主流的闪存主要区别在于，它使用了氮化硅（Si3N4），而不是多晶硅，来充当存储材料。它的一个分支是SHINOS（硅-高电介质-氮化物-氧化物-硅）。SONOS允许比多晶硅闪存更低的编程电压和更高的编程-擦除循环次数，是一个较为活跃的研究、开发热点。提供基于SONOS产品的公司包括GlobalFoundries、Cypress Semiconductor、Macronix、东芝、联华电子、。 (zh) SONOS, short for "silicon–oxide–nitride–oxide–silicon", more precisely, "polycrystalline silicon"—"silicon dioxide"—"silicon nitride"—"silicon dioxide"—"silicon",is a cross sectional structure of MOSFET (metal-oxide-semiconductor field-effect transistor), realized by P.C.Y. Chen of Fairchild Camera and Instrument in 1977. This structure is often used for non-volatile memories, such as EEPROM and flash memories. It is sometimes used for TFT LCD displays.It is one of CTF (charge trap flash) variants. It is distinguished from traditional non-volatile memory structures by the use of silicon nitride (Si3N4 or Si9N10) instead of "polysilicon-based FG (floating-gate)" for the charge storage material.A further variant is "SHINOS" ("silicon"—"hi-k"—"nitride"—"oxide"—"silicon"), which is substituted (en)
foaf:depiction
dct:subject	Emerging technologies Non-volatile memory Computer memory MOSFETs
Wikipage page ID	7318960 (xsd:integer)
Wikipage revision ID	1083571399 (xsd:integer)
Link from a Wikipage to another Wikipage	Programmable read-only memory Electric charge NMOS logic Metal–nitride–oxide–semiconductor transistor Bell Labs Dawon Kahng Renesas Electronics Charge pump Charge trap flash United Microelectronics Corporation Electrostatic Sense amplifier Emerging technologies Cross section (geometry) NAND gate Oxide Quantum tunnelling Electrons Fujitsu GlobalFoundries Mohamed M. Atalla NCR Corporation Liquid-crystal display MOSFET Macronix Silicon dioxide Silicon nitride Computer memory Embedded system PMOS logic Non-volatile memory Address decoder Toshiba Westinghouse Electric Corporation AMD Computer memory MOSFETs Cypress Semiconductor EEPROM EPROM Flash memory Non-volatile memory Fairchild Camera and Instrument Floating-gate MOSFET Semiconductor intellectual property core Qimonda Thin-film-transistor liquid-crystal display TSMC High-κ dielectric Threshold voltage Transistor Dielectric Philips Semiconductors Spansion Sperry Corporation Intel Microchip Technology Micron Technology Memory cell (computing) Saifun Semiconductors Silicon Ångström Nitride Polycrystalline silicon Polysilicon Metal-Nitride-Oxide-Semiconductor transistor Boolean logic Floating-gate Floating gate Simon Min Sze dbr:Bitline dbr:John_Szedon

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