• Facets (new session)
• Description
• Metadata
• Settings
  • Rule: ActivityStreamsMapasEquivalentb3sb3sifpdbprdf-labelfacetshttp://dbpedia.org/resource/inference/rules/dbpedia#http://dbpedia.org/resource/inference/rules/opencyc#http://dbpedia.org/resource/inference/rules/umbel#http://dbpedia.org/resource/inference/rules/yago#http://dbpedia.org/schema/property_rules#http://www.ontologyportal.org/inference/rules/SUMO#http://www.ontologyportal.org/inference/rules/WordNet#http://www.w3.org/2002/07/owl#ldpoplwebskos-transurn:det:rdf:labelvirtrdf-labelvirtrdf-urlNone
    
  • Inverse Functional Properties: Disabled (fastest) Apply to subjects only Apply to objects only Apply to both subjects and objects
  • "Same As": Disabled (fastest) Apply to subjects only Apply to objects only Apply to both subjects and objects (recommended) Apply to subjects, objects and predicates (not recommended on big datasets) Apply to predicates only (special use cases only)

About: Aluminium arsenide     Goto   Sponge   NotDistinct   Permalink

An Entity of Type : umbel-rc:ChemicalSubstanceType, within Data Space : dbpedia.org associated with source document(s)

Type: Thingdul:ChemicalObjectchemical substanceChemical compoundyago:WikicatArsenidesyago:WikicatSemiconductorMaterialsyago:Abstraction100002137yago:Arsenide114610443yago:Chemical114806838yago:Cognition100023271yago:Compound105870180yago:Compound114818238yago:Concept105835747yago:Content105809192yago:Idea105833840yago:Material114580897yago:Matter100020827yago:Part113809207yago:PhysicalEntity100001930yago:PsychologicalFeature100023100yago:Relation100031921yago:WikicatIII-VCompoundschemical compoundyago:Substance100019613yago:Whole105869584yago:WikicatAluminiumCompoundsumbel-rc:ChemicalSubstanceType New Facet based on Instances of this Class

Aluminium arsenide (AlAs) is a semiconductor material with almost the same lattice constant as gallium arsenide and aluminium gallium arsenide and wider band gap than gallium arsenide. (AlAs) can form a superlattice with gallium arsenide (GaAs) which results in its semiconductor properties. Because GaAs and AlAs have almost the same lattice constant, the layers have very little induced strain, which allows them to be grown almost arbitrarily thick. This allows for extremely high performance high electron mobility, HEMT transistors, and other quantum well devices.