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In electronic engineering, a through-silicon via (TSV) or through-chip via is a vertical electrical connection (via) that passes completely through a silicon wafer or die. TSVs are high-performance interconnect techniques used as an alternative to wire-bond and flip chips to create 3D packages and 3D integrated circuits. Compared to alternatives such as package-on-package, the interconnect and device density is substantially higher, and the length of the connections becomes shorter.

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  • Via silici a través (ca)
  • Silizium-Durchkontaktierung (de)
  • Vía a través de silicio (es)
  • Via traversant (fr)
  • Si貫通電極 (ja)
  • Through-Silicon-Via (pt)
  • Through-silicon via (en)
  • 硅穿孔 (zh)
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  • Unter dem Begriff Silizium-Durchkontaktierung (englisch through-silicon via, TSV) versteht man in der Halbleitertechnik eine meist vertikale elektrische Verbindung aus Metall durch ein Silizium-Substrat (Wafer, Chip). Die TSV-Technologie ist eine vielversprechende Möglichkeit zur Realisierung elektrischer Verbindungen zwischen Teilchips bei der 3D-Integration von zukünftigen integrierten Schaltkreisen (IC). (de)
  • Dans le domaine de l'industrie des semi-conducteurs, un via traversant (en anglais through-silicon via) est un contact électrique réalisé dans la verticalité du substrat, permettant d'établir une connexion entre les deux faces. Ainsi les contacts peuvent être repris sur la face du substrat opposée à la face active où se trouve les dispositifs microélectroniques ou électromécaniques. (fr)
  • In electronic engineering, a through-silicon via (TSV) or through-chip via is a vertical electrical connection (via) that passes completely through a silicon wafer or die. TSVs are high-performance interconnect techniques used as an alternative to wire-bond and flip chips to create 3D packages and 3D integrated circuits. Compared to alternatives such as package-on-package, the interconnect and device density is substantially higher, and the length of the connections becomes shorter. (en)
  • Si貫通電極(シリコンかんつうでんきょく、through-silicon via、TSV)とは、電子部品である半導体の実装技術の1つであり、シリコン製半導体チップの内部を垂直に貫通する電極のことである。複数枚のチップを積ねて1つのパッケージに収める場合に、従来ではワイヤ・ボンディングで行なわれている上下のチップ同士の接続をこの貫通電極で行なう。 こういった電極は、構造の点では従来のプリント基板でビアと呼ばれているものとスケールを除けば同様のものであり、この「シリコン貫通電極」又は「TSV」は、「シリコン貫通ビア」や「TSS」(Through-Silicon Stacking、Thru-Silicon Stacking)とも呼ばれる。 TSVは3次元実装パッケージや3次元集積回路を作るのに重要な技術である。 (ja)
  • 硅穿孔(英語:Through Silicon Via, 常簡寫為TSV,也稱做硅通孔)是一种穿透硅晶圆或芯片的垂直互连。 TSV 是一種讓3D IC封裝遵循摩爾定律(Moore's Law)的互連技術,TSV可堆疊多片晶片,其設計概念來自於印刷電路板(PCB), 在晶片鑽出小洞(製程又可分為先鑽孔及後鑽孔兩種, Via First, Via Last),從底部填充入金屬, 矽晶圓上以蝕刻或雷射方式鑽孔(via),再以導電材料如銅、多晶矽、鎢等物質填滿。此一技術能夠以更低的成本有效提高系統的整合度與效能。 TSV技术在和三维集成电路中具有重要应用,對於跨入3D IC相當具有優勢。2006年4月,韓國三星表示已成功將TSV技術應用在“晶圓級堆疊封裝”(Wafer level process stack package, WSP)NAND Flash堆疊的技術堆疊八個2Gb NAND Flash晶片,以雷射鑽孔打造出TSV製程,高度是0.56mm。2007年4月三星公佈其以WSP技術應用在DRAM的產品,共堆疊了4顆512Mb的DRAM晶片。到目前為止,晶片商採用矽穿孔技術的商業行為有限,僅有CMOS(CIS)影像感測器、MEMS等少數幾種。 (zh)
  • En ingeniería electrónica, las vías a través del silicio​o TSV (del inglés through-silicon via) son conexiones verticales que atraviesan por completo tanto las obleas de silicio como las superficies individuales de los circuitos integrados, conocidas como pastillas o dados. La tecnología de creación de las TSV es utilizada como parte del proceso de fabricación de chips 3D, que incluyen decenas de capas de memoria apiladas. (es)
  • Em engenharia electrónica, as TSV (Through-Silicon-Via) são vias de conexão verticais que atravessam por completo, tanto wafers de silício como superfícies individuais de circuitos integrados (as denominadas “die” em inglês). A tecnologia de criação de TSVs é utilizada como parte do processo de fabricação de chips 3D. Quanto ao processo de fabricação destas vias, cabe destacar que geralmente são realizadas mediante laser ou algum outro método de perfuração (mais ou menos complexo), para posteriormente ser recheadas de cobre ou de algum outro material condutor. (pt)
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