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About: Silicon controlled rectifier     Goto   Sponge   NotDistinct   Permalink

An Entity of Type : yago:WikicatDiodes, within Data Space : dbpedia.org associated with source document(s)

Type: yago:WikicatSemiconductorDevicesyago:WikicatSolidStateSwitchesyago:Artifact100021939yago:Conductor103088707yago:Control103096960yago:Device103183080yago:Diode103202940yago:ElectronicDevice103277771yago:Instrumentality103575240yago:Mechanism103738472yago:Object100002684yago:PhysicalEntity100001930deviceyago:SemiconductorDevice104171831yago:Switch104372370yago:Tube104494204yago:Whole100003553yago:WikicatDiodes New Facet based on Instances of this Class

A silicon controlled rectifier or semiconductor controlled rectifier is a four-layer solid-state current-controlling device. The name "silicon controlled rectifier" is General Electric's trade name for a type of thyristor. The principle of four-layer p–n–p–n switching was developed by Moll, Tanenbaum, Goldey, and Holonyak of Bell Laboratories in 1956. The practical demonstration of silicon controlled switching and detailed theoretical behavior of a device in agreement with the experimental results was presented by Dr Ian M. Mackintosh of Bell Laboratories in January 1958. The SCR was developed by a team of power engineers led by Gordon Hall and commercialized by Frank W. "Bill" Gutzwiller in 1957.