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Ronald D Schrimpf is an American electrical engineer and scientist. He is the Orrin H. Ingram Chair in Engineering, Electrical Engineering & Computer Science at Vanderbilt University. where his research activities focus on microelectronics and semiconductor devices. He is affiliated with the Radiation Effects and Reliability Group at Vanderbilt University where he works on the effects of radiation on semiconductor devices and integrated circuits. He also serves as the Director of the Institute for Space and Defense Electronics at Vanderbilt. He is best known for his work in the field of ionizing radiation response on Bipolar junction transistor (BJT) and Enhanced Low Dose Rate Sensitivity in BJT.

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  • Ronald D. Schrimpf (en)
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  • Ronald D Schrimpf is an American electrical engineer and scientist. He is the Orrin H. Ingram Chair in Engineering, Electrical Engineering & Computer Science at Vanderbilt University. where his research activities focus on microelectronics and semiconductor devices. He is affiliated with the Radiation Effects and Reliability Group at Vanderbilt University where he works on the effects of radiation on semiconductor devices and integrated circuits. He also serves as the Director of the Institute for Space and Defense Electronics at Vanderbilt. He is best known for his work in the field of ionizing radiation response on Bipolar junction transistor (BJT) and Enhanced Low Dose Rate Sensitivity in BJT. (en)
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  • Ronald D. Schrimpf (en)
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  • Ronald D. Schrimpf (en)
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  • http://commons.wikimedia.org/wiki/Special:FilePath/Ron_Schrimpf.jpg
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  • Fellow of the IEEE (en)
  • Chancellor's Award for Research, Vanderbilt University, 2003 (en)
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  • Enhanced Low Dose Rate Sensitivity in Bipolar Junction Transistors (en)
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  • Ronald D Schrimpf is an American electrical engineer and scientist. He is the Orrin H. Ingram Chair in Engineering, Electrical Engineering & Computer Science at Vanderbilt University. where his research activities focus on microelectronics and semiconductor devices. He is affiliated with the Radiation Effects and Reliability Group at Vanderbilt University where he works on the effects of radiation on semiconductor devices and integrated circuits. He also serves as the Director of the Institute for Space and Defense Electronics at Vanderbilt. He is best known for his work in the field of ionizing radiation response on Bipolar junction transistor (BJT) and Enhanced Low Dose Rate Sensitivity in BJT. (en)
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  • R. M. Warner (en)
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