• Facets (new session)
• Description
• Metadata
• Settings
  • Rule: ActivityStreamsMapasEquivalentb3sb3sifpdbprdf-labelfacetshttp://dbpedia.org/resource/inference/rules/dbpedia#http://dbpedia.org/resource/inference/rules/opencyc#http://dbpedia.org/resource/inference/rules/umbel#http://dbpedia.org/resource/inference/rules/yago#http://dbpedia.org/schema/property_rules#http://www.ontologyportal.org/inference/rules/SUMO#http://www.ontologyportal.org/inference/rules/WordNet#http://www.w3.org/2002/07/owl#ldpoplwebskos-transurn:det:rdf:labelvirtrdf-labelvirtrdf-urlNone
    
  • Inverse Functional Properties: Disabled (fastest) Apply to subjects only Apply to objects only Apply to both subjects and objects
  • "Same As": Disabled (fastest) Apply to subjects only Apply to objects only Apply to both subjects and objects (recommended) Apply to subjects, objects and predicates (not recommended on big datasets) Apply to predicates only (special use cases only)

About: B. Jayant Baliga     Goto   Sponge   NotDistinct   Permalink

An Entity of Type : yago:WikicatRensselaerPolytechnicInstituteAlumni, within Data Space : dbpedia.org associated with source document(s)

Type: Thingpersonyago:WikicatAmericanElectricalEngineersyago:WikicatLivingPeopleyago:Alumnus109786338yago:CausalAgent100007347yago:ElectricalEngineer110049017yago:Emigrant110051975yago:Engineer109615807yago:Intellectual109621545yago:LivingThing100004258yago:Migrant110314952yago:Object100002684yago:Organism100004475yago:Person100007846yago:PhysicalEntity100001930yago:WikicatGeneralElectricPeopleyago:WikicatIndianEmigrantsToTheUnitedStatesyago:YagoLegalActoryago:YagoLegalActorGeoyago:Scholar110557854yago:Traveler109629752yago:Whole100003553yago:WikicatRensselaerPolytechnicInstituteAlumni New Facet based on Instances of this Class

Bantval Jayant Baliga (born 28 April 1948 in Chennai) is an Indian electrical engineer best known for his work in power semiconductor devices, and particularly the invention of the insulated gate bipolar transistor (IGBT). In 1993, Baliga was elected as a member into the National Academy of Engineering for contributions to power semiconductor devices leading to the advent of smart power technology.