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Anderson's rule is used for the construction of energy band diagrams of the heterojunction between two semiconductor materials. Anderson's rule states that when constructing an energy band diagram, the vacuum levels of the two semiconductors on either side of the heterojunction should be aligned (at the same energy). It is also referred to as the electron affinity rule, and is closely related to the Schottky–Mott rule for metal–semiconductor junctions. Anderson's rule was first described by R. L. Anderson in 1960.

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  • Anderson's rule (en)
  • アンダーソンの法則 (ja)
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  • Anderson's rule is used for the construction of energy band diagrams of the heterojunction between two semiconductor materials. Anderson's rule states that when constructing an energy band diagram, the vacuum levels of the two semiconductors on either side of the heterojunction should be aligned (at the same energy). It is also referred to as the electron affinity rule, and is closely related to the Schottky–Mott rule for metal–semiconductor junctions. Anderson's rule was first described by R. L. Anderson in 1960. (en)
  • アンダーソンの法則(Anderson's rule)は、2つの半導体材料をヘテロ構造にした場合にそれぞれのバンド構造がどのように接続されるか計算するためのモデル。1960年にR.L. Andersonにより発表された。このモデルでは、ヘテロ構造を構成する2つの半導体の真空レベルが同一のエネルギーになると仮定している。 (ja)
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  • Anderson's rule is used for the construction of energy band diagrams of the heterojunction between two semiconductor materials. Anderson's rule states that when constructing an energy band diagram, the vacuum levels of the two semiconductors on either side of the heterojunction should be aligned (at the same energy). It is also referred to as the electron affinity rule, and is closely related to the Schottky–Mott rule for metal–semiconductor junctions. Anderson's rule was first described by R. L. Anderson in 1960. (en)
  • アンダーソンの法則(Anderson's rule)は、2つの半導体材料をヘテロ構造にした場合にそれぞれのバンド構造がどのように接続されるか計算するためのモデル。1960年にR.L. Andersonにより発表された。このモデルでは、ヘテロ構造を構成する2つの半導体の真空レベルが同一のエネルギーになると仮定している。 (ja)
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