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Namespace Prefixes

PrefixIRI
dbpedia-dehttp://de.dbpedia.org/resource/
dctermshttp://purl.org/dc/terms/
yago-reshttp://yago-knowledge.org/resource/
dbohttp://dbpedia.org/ontology/
foafhttp://xmlns.com/foaf/0.1/
n12http://www.cs.utah.edu/classes/cs6710/handouts/AppendixB/
n4http://dbpedia.org/resource/File:
n16https://global.dbpedia.org/id/
yagohttp://dbpedia.org/class/yago/
dbthttp://dbpedia.org/resource/Template:
rdfshttp://www.w3.org/2000/01/rdf-schema#
freebasehttp://rdf.freebase.com/ns/
n7http://commons.wikimedia.org/wiki/Special:FilePath/
dbpedia-fahttp://fa.dbpedia.org/resource/
rdfhttp://www.w3.org/1999/02/22-rdf-syntax-ns#
owlhttp://www.w3.org/2002/07/owl#
wikipedia-enhttp://en.wikipedia.org/wiki/
dbphttp://dbpedia.org/property/
dbchttp://dbpedia.org/resource/Category:
provhttp://www.w3.org/ns/prov#
xsdhhttp://www.w3.org/2001/XMLSchema#
wikidatahttp://www.wikidata.org/entity/
goldhttp://purl.org/linguistics/gold/
dbrhttp://dbpedia.org/resource/

Statements

Subject Item
dbr:Bipolar_junction_transistor
dbo:wikiPageWikiLink
dbr:Multiple-emitter_transistor
Subject Item
dbr:Transistor
dbo:wikiPageWikiLink
dbr:Multiple-emitter_transistor
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dbr:Transistor–transistor_logic
dbo:wikiPageWikiLink
dbr:Multiple-emitter_transistor
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dbr:Multiple-emitter_transistor
rdf:type
yago:Instrumentality103575240 yago:SemiconductorDevice104171831 yago:PhysicalEntity100001930 yago:Transistor104471632 yago:Device103183080 yago:Whole100003553 yago:Object100002684 yago:Conductor103088707 yago:Artifact100021939 yago:WikicatTransistors
rdfs:label
Multiple-emitter transistor Multiemitter-Transistor
rdfs:comment
Der Multiemitter-Transistor stellt eine besondere Form von Bipolartransistor dar. Er verfügt über einen Basis- (B) und einen Kollektoranschluss (C), aber im Unterschied zu herkömmlichen Bipolartransistoren weist er mehrere Emitteranschlüsse (E1,…,En) auf. Schaltungstechnisch stellt er eine Parallelschaltung mehrerer herkömmlicher Bipolartransistoren dar, deren Basis- bzw. Kollektoranschlüsse zu je einem Anschluss zusammengefasst sind und deren Emitteranschlüsse separat verfügbar sind. A multiple-emitter transistor is a specialized bipolar transistor mostly used at the inputs of integrated circuit TTL NAND logic gates. Input signals are applied to the emitters. The voltage presented to the following stage is pulled low if any one or more of the base–emitter junctions is forward biased, allowing logical operations to be performed using a single transistor. Multiple-emitter transistors replace the diodes of diode–transistor logic (DTL) to make transistor–transistor logic (TTL), and thereby allow reduction of switching time and power dissipation.
foaf:depiction
n7:Simple_bipolar_transistor.png n7:Multiple-emitter_transistor.png
dcterms:subject
dbc:Digital_electronics
dbo:wikiPageID
20959189
dbo:wikiPageRevisionID
1064235944
dbo:wikiPageWikiLink
n4:Simple_bipolar_transistor.png dbr:Bipolar_transistor dbr:Diode–transistor_logic dbr:Negated_AND_gate dbr:Diode dbr:Gate_delay dbr:Integrated_circuit dbr:Logic_gate dbr:Low-power_electronics n4:Multiple-emitter_transistor.png dbr:Transistor–transistor_logic dbc:Digital_electronics dbr:Transistor
dbo:wikiPageExternalLink
n12:appendixB.doc3.html
owl:sameAs
freebase:m.05b6952 wikidata:Q1952357 dbpedia-fa:ترانزیستور_امیترچندگانه n16:sQh5 yago-res:Multiple-emitter_transistor dbpedia-de:Multiemitter-Transistor
dbp:wikiPageUsesTemplate
dbt:Physics-stub
dbo:thumbnail
n7:Simple_bipolar_transistor.png?width=300
dbo:abstract
Der Multiemitter-Transistor stellt eine besondere Form von Bipolartransistor dar. Er verfügt über einen Basis- (B) und einen Kollektoranschluss (C), aber im Unterschied zu herkömmlichen Bipolartransistoren weist er mehrere Emitteranschlüsse (E1,…,En) auf. Schaltungstechnisch stellt er eine Parallelschaltung mehrerer herkömmlicher Bipolartransistoren dar, deren Basis- bzw. Kollektoranschlüsse zu je einem Anschluss zusammengefasst sind und deren Emitteranschlüsse separat verfügbar sind. A multiple-emitter transistor is a specialized bipolar transistor mostly used at the inputs of integrated circuit TTL NAND logic gates. Input signals are applied to the emitters. The voltage presented to the following stage is pulled low if any one or more of the base–emitter junctions is forward biased, allowing logical operations to be performed using a single transistor. Multiple-emitter transistors replace the diodes of diode–transistor logic (DTL) to make transistor–transistor logic (TTL), and thereby allow reduction of switching time and power dissipation. Logic gate use of multiple-emitter transistors was patented in 1961 in the UK and in the US in 1962.
gold:hypernym
dbr:Transistor
prov:wasDerivedFrom
wikipedia-en:Multiple-emitter_transistor?oldid=1064235944&ns=0
dbo:wikiPageLength
1879
foaf:isPrimaryTopicOf
wikipedia-en:Multiple-emitter_transistor
Subject Item
dbr:Multiple_emitter_transistor
dbo:wikiPageWikiLink
dbr:Multiple-emitter_transistor
dbo:wikiPageRedirects
dbr:Multiple-emitter_transistor
Subject Item
wikipedia-en:Multiple-emitter_transistor
foaf:primaryTopic
dbr:Multiple-emitter_transistor