Static induction transistor (SIT) is a high power, high frequency device. It is a vertical structure device with short multichannel. Being a vertical device, the SIT structure offers advantages in obtaining higher breakdown voltages than a Field-effect transistor (FET). For the SIT, it is not limited by the surface breakdown between gate and drain, and can operate at a very high current and voltage.

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  • 静電誘導トランジスタ(せいでんゆうどうトランジスタ、英語: Static Induction Transistor (SIT))とは、高周波特性を改善した電力用半導体素子である。 (ja)
  • Static induction transistor (SIT) is a high power, high frequency device. It is a vertical structure device with short multichannel. Being a vertical device, the SIT structure offers advantages in obtaining higher breakdown voltages than a Field-effect transistor (FET). For the SIT, it is not limited by the surface breakdown between gate and drain, and can operate at a very high current and voltage. (en)
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http://purl.org/linguistics/gold/hypernym
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  • 静電誘導トランジスタ(せいでんゆうどうトランジスタ、英語: Static Induction Transistor (SIT))とは、高周波特性を改善した電力用半導体素子である。 (ja)
  • Static induction transistor (SIT) is a high power, high frequency device. It is a vertical structure device with short multichannel. Being a vertical device, the SIT structure offers advantages in obtaining higher breakdown voltages than a Field-effect transistor (FET). For the SIT, it is not limited by the surface breakdown between gate and drain, and can operate at a very high current and voltage. (en)
rdfs:label
  • 静電誘導トランジスタ (ja)
  • Static induction transistor (en)
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