SiGe (/ˈsɪɡiː/ or /ˈsaɪdʒiː/), or silicon-germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture.

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  • SiGe (/ˈsɪɡiː/ or /ˈsaɪdʒiː/), or silicon-germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture. (en)
  • Siliciumgermanium (fachsprachlich; standardsprachlich Siliziumgermanium), kurz SiGe, ist ein IV-IV-Verbindungshalbleiter bestehend aus den Elementen Silicium (Si) und Germanium (Ge). (de)
  • Les alliages silicium-germanium désignent une famille de composés de formule GexSi1-x utilisés en tant que semi-conducteurs dans des transistors. (fr)
  • 矽鍺(英语:Silicon-germanium,縮寫為SiGe),是一種合金,依矽和鍺的莫耳比可以表示成SixGe1-x。常被用作積體電路(IC)中的半導體材料,可做成异质结双极性晶体管或CMOS電晶體中的應變感應層(strain-inducing layer)。IBM公司于1989年在工业生产中引入了硅锗合金相关技术,这一新技術使混合訊號積體電路和類比積體電路的設計与生产多了一項選擇。 (zh)
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http://purl.org/linguistics/gold/hypernym
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  • SiGe (/ˈsɪɡiː/ or /ˈsaɪdʒiː/), or silicon-germanium, is an alloy with any molar ratio of silicon and germanium, i.e. with a molecular formula of the form Si1−xGex. It is commonly used as a semiconductor material in integrated circuits (ICs) for heterojunction bipolar transistors or as a strain-inducing layer for CMOS transistors. IBM introduced the technology into mainstream manufacturing in 1989. This relatively new technology offers opportunities in mixed-signal circuit and analog circuit IC design and manufacture. (en)
  • Siliciumgermanium (fachsprachlich; standardsprachlich Siliziumgermanium), kurz SiGe, ist ein IV-IV-Verbindungshalbleiter bestehend aus den Elementen Silicium (Si) und Germanium (Ge). (de)
  • Les alliages silicium-germanium désignent une famille de composés de formule GexSi1-x utilisés en tant que semi-conducteurs dans des transistors. (fr)
  • 矽鍺(英语:Silicon-germanium,縮寫為SiGe),是一種合金,依矽和鍺的莫耳比可以表示成SixGe1-x。常被用作積體電路(IC)中的半導體材料,可做成异质结双极性晶体管或CMOS電晶體中的應變感應層(strain-inducing layer)。IBM公司于1989年在工业生产中引入了硅锗合金相关技术,这一新技術使混合訊號積體電路和類比積體電路的設計与生产多了一項選擇。 (zh)
rdfs:label
  • Silicon-germanium (en)
  • Siliciumgermanium (de)
  • Silicium-germanium (fr)
  • 矽鍺 (zh)
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