Resistive random-access memory (RRAM) is a new non-volatile memory type being developed by many companies. The technology bears some similarities to CBRAM and phase change memory. Different forms of RRAM have been disclosed, based on different dielectric materials, spanning from perovskites to transition metal oxides to chalcogenides. Even silicon dioxide has been shown to exhibit resistive switching as early as 1967, and has recently been revisited.

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dbpprop:abstract
  • Resistive random-access memory (RRAM) is a new non-volatile memory type being developed by many companies. The technology bears some similarities to CBRAM and phase change memory. Different forms of RRAM have been disclosed, based on different dielectric materials, spanning from perovskites to transition metal oxides to chalcogenides. Even silicon dioxide has been shown to exhibit resistive switching as early as 1967, and has recently been revisited.
  • La RRAM (nota anche come ReRAM), acronimo di Resistive Random Access Memory, è una tipologia di memoria permanente attualmente in fase di sviluppo, in cui l'informazione memorizzata è associata alla resistenza di un sottile film di materiale commutabile elettricamente.
  • ReRAM(Resistance Random Access Memory)は電圧の印加による電気抵抗の変化を利用した半導体メモリ。RRAM、抵抗変化型メモリなどとも呼ばれる。なおRRAMはシャープの商標である。 ReRAMは電圧印加による電気抵抗の大きな変化（電界誘起巨大抵抗変化、CER（Colossal Electro-Resistance ）効果）を利用しており、 電圧で書き換えるため（電流が微量で）消費電力が小さい 比較的単純な構造のためセル面積が約6F（Fは配線の径で、数十nm程）と小さく、高密度化（=低コスト化）が可能 電気抵抗の変化率が数十倍にものぼり、多値化も容易 読み出し時間が10ナノ秒程度と、DRAM並に高速 といったデバイスとしての利点がある。
  • RRAM, een afkorting van Resistive Random Access Memory is een nieuw niet-vluchtig geheugen dat op dit moment wordt ontwikkeld door Sharp. Op dit moment is er nog niet veel bekend over de technologie die hiervoor gebruikt wordt, maar volgens Sharp zal het tot maximaal 100 keer sneller zijn dat het huidige Flash geheugen
  • RRAM (förkortning för Resistive Random-Access Memory) är en ny typ av icke-flyktigt minne som utvecklas av många olika företag. Teknologin har vissa likheter med CBRAM.
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rdfs:comment
  • Resistive random-access memory (RRAM) is a new non-volatile memory type being developed by many companies. The technology bears some similarities to CBRAM and phase change memory. Different forms of RRAM have been disclosed, based on different dielectric materials, spanning from perovskites to transition metal oxides to chalcogenides. Even silicon dioxide has been shown to exhibit resistive switching as early as 1967, and has recently been revisited.
  • La RRAM (nota anche come ReRAM), acronimo di Resistive Random Access Memory, è una tipologia di memoria permanente attualmente in fase di sviluppo, in cui l'informazione memorizzata è associata alla resistenza di un sottile film di materiale commutabile elettricamente.
  • RRAM, een afkorting van Resistive Random Access Memory is een nieuw niet-vluchtig geheugen dat op dit moment wordt ontwikkeld door Sharp. Op dit moment is er nog niet veel bekend over de technologie die hiervoor gebruikt wordt, maar volgens Sharp zal het tot maximaal 100 keer sneller zijn dat het huidige Flash geheugen
  • RRAM (förkortning för Resistive Random-Access Memory) är en ny typ av icke-flyktigt minne som utvecklas av många olika företag. Teknologin har vissa likheter med CBRAM.
rdfs:label
  • Resistive random-access memory
  • RRAM
  • ReRAM
  • RRAM
  • RRAM
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