Indium gallium aluminium nitride (InGaAlN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as MOCVD, MBE, PLD, etc. This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs. The chemical symbol for the compound is InGaAlN.

Property Value
dbo:abstract
  • Indium gallium aluminium nitride (InGaAlN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as MOCVD, MBE, PLD, etc. This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs. The chemical symbol for the compound is InGaAlN. (en)
  • 氮化鋁銦鎵的化學式是InGaAlN,是以氮化鎵為基礎的半導體,常用磊晶成長的方式製成,像是有机金属化学气相沉积法(MOCVD)、分子束外延(MBE)、脉冲激光沉积(PLD)等方式。此材料用在特別的光電應用中,像是藍光雷射LED及藍光LED等。 (zh)
dbo:wikiPageID
  • 13925557 (xsd:integer)
dbo:wikiPageRevisionID
  • 735482611 (xsd:integer)
dct:subject
http://purl.org/linguistics/gold/hypernym
rdf:type
rdfs:comment
  • Indium gallium aluminium nitride (InGaAlN) is a GaN-based compound semiconductor. It is usually prepared by epitaxial growth, such as MOCVD, MBE, PLD, etc. This material is used for specialist opto-electronics applications, often in blue laser diodes and LEDs. The chemical symbol for the compound is InGaAlN. (en)
  • 氮化鋁銦鎵的化學式是InGaAlN,是以氮化鎵為基礎的半導體,常用磊晶成長的方式製成,像是有机金属化学气相沉积法(MOCVD)、分子束外延(MBE)、脉冲激光沉积(PLD)等方式。此材料用在特別的光電應用中,像是藍光雷射LED及藍光LED等。 (zh)
rdfs:label
  • Indium gallium aluminium nitride (en)
  • 氮化鋁銦鎵 (zh)
owl:sameAs
prov:wasDerivedFrom
foaf:isPrimaryTopicOf
is dbo:wikiPageRedirects of
is foaf:primaryTopic of