Anodic bonding is a wafer bonding process to seal glass to either silicon or metal without introducing an intermediate layer; it is commonly used to seal glass to silicon wafers in electronics and microfluidics. This bonding technique, also known as field assisted bonding or electrostatic sealing, is mostly used for connecting silicon/glass and metal/glass through electric fields. The requirements for anodic bonding are clean and even wafer surfaces and atomic contact between the bonding substrates through a sufficiently powerful electrostatic field. Also necessary is the use of borosilicate glass containing a high concentration of alkali ions. The coefficient of thermal expansion (CTE) of the processed glass needs to be similar to those of the bonding partner.

Property Value
dbo:abstract
  • Anodisches Bonden ist ein Verbindungsverfahren, das besonders bei der Herstellung von Sensoren und mikromechanischen Bauelementen der Halbleiter- und Mikrosystemtechnik zur Anwendung kommt. (de)
  • Anodic bonding is a wafer bonding process to seal glass to either silicon or metal without introducing an intermediate layer; it is commonly used to seal glass to silicon wafers in electronics and microfluidics. This bonding technique, also known as field assisted bonding or electrostatic sealing, is mostly used for connecting silicon/glass and metal/glass through electric fields. The requirements for anodic bonding are clean and even wafer surfaces and atomic contact between the bonding substrates through a sufficiently powerful electrostatic field. Also necessary is the use of borosilicate glass containing a high concentration of alkali ions. The coefficient of thermal expansion (CTE) of the processed glass needs to be similar to those of the bonding partner. Anodic bonding can be applied with glass wafers at temperatures of 250 to 400 °C or with sputtered glass at 400 °C. Structured borosilicate glass layers may also be deposited by plasma-assisted e-beam evaporation. This procedure is mostly used for hermetic encapsulation of micro-mechanical silicon elements. The glass substrate encapsulation protects from environmental influences, e.g. humidity or contamination. Further, other materials are used for anodic bonding with silicon, i.e. low-temperature cofired ceramics (LTCC). (en)
dbo:wikiPageID
  • 31321967 (xsd:integer)
dbo:wikiPageRevisionID
  • 720216931 (xsd:integer)
dct:subject
http://purl.org/linguistics/gold/hypernym
rdf:type
rdfs:comment
  • Anodisches Bonden ist ein Verbindungsverfahren, das besonders bei der Herstellung von Sensoren und mikromechanischen Bauelementen der Halbleiter- und Mikrosystemtechnik zur Anwendung kommt. (de)
  • Anodic bonding is a wafer bonding process to seal glass to either silicon or metal without introducing an intermediate layer; it is commonly used to seal glass to silicon wafers in electronics and microfluidics. This bonding technique, also known as field assisted bonding or electrostatic sealing, is mostly used for connecting silicon/glass and metal/glass through electric fields. The requirements for anodic bonding are clean and even wafer surfaces and atomic contact between the bonding substrates through a sufficiently powerful electrostatic field. Also necessary is the use of borosilicate glass containing a high concentration of alkali ions. The coefficient of thermal expansion (CTE) of the processed glass needs to be similar to those of the bonding partner. (en)
rdfs:label
  • Anodisches Bonden (de)
  • Anodic bonding (en)
owl:sameAs
prov:wasDerivedFrom
foaf:isPrimaryTopicOf
is foaf:primaryTopic of