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Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment.Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically only a small fraction of the ejected particles are ionized — on the order of 1 percent) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering). Alternatively, at higher gas pressures, the ions collide with the gas atoms that act as

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  • ترسيب بالرش المهبطي (ar)
  • Deposició per pulverització (ca)
  • Napylanie w polu magnetycznym (pl)
  • Sputter deposition (en)
  • Магнетронное распыление (ru)
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  • الترسيب بالرش المهبطي (Sputter Deposition) وهي تقنية تستخدم في صناعة مواد أقراص التخزين الجديدة وتحديداً أشرطة التخزين المغناطيسية وأفلام التخزين الرقيقة المفرغة، وتنطوي هذه العملية في إطلاق أيونات الآرغون على ركيزة من فيلم البوليمر مما يؤدي إلى إنتاج طبقات من جزيئات الكريستال المغناطيسي. (ar)
  • Napylanie w polu magnetycznym – metoda fizycznego osadzania warstw z fazy gazowej (PVD, z ang. physical vapour deposition). Proces polega na nanoszeniu na modyfikowanej powierzchni nośnika filmu zbudowanego z rozpylonych w polu magnetycznym jonów pochodzących z powierzchni materiału źródła. (pl)
  • Магнетронное распыление — технология нанесения тонких плёнок на подложку с помощью катодного распыления мишени в плазме магнетронного разряда — диодного разряда в скрещённых полях. Технологические устройства, предназначенные для реализации этой технологии, называются магнетронными распылительными системами, или, сокращённо, магнетронами (не путать с вакуумными магнетронами — устройствами, предназначенными для генерации СВЧ-колебаний). (ru)
  • Sputter deposition is a physical vapor deposition (PVD) method of thin film deposition by the phenomenon of sputtering. This involves ejecting material from a "target" that is a source onto a "substrate" such as a silicon wafer. Resputtering is re-emission of the deposited material during the deposition process by ion or atom bombardment.Sputtered atoms ejected from the target have a wide energy distribution, typically up to tens of eV (100,000 K). The sputtered ions (typically only a small fraction of the ejected particles are ionized — on the order of 1 percent) can ballistically fly from the target in straight lines and impact energetically on the substrates or vacuum chamber (causing resputtering). Alternatively, at higher gas pressures, the ions collide with the gas atoms that act as (en)
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