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Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock. Such rapid heating rates are often attained by high intensity lamps or lasers. These processes are used for a wide variety of applications in semiconductor manufacturing including dopant activation, thermal oxidation, metal reflow and chemical vapor deposition.

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  • Rapid Thermal Processing (de)
  • Recuit thermique rapide (fr)
  • ラピッドサーマルプロセス (ja)
  • Rapid thermal processing (en)
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  • Rapid Thermal Processing (dt.: schnelle thermische Bearbeitung) ist ein Überbegriff für die Bearbeitung von Wafern in einem Hochtemperaturprozess, bei dem eine sehr rasche Erhitzung des Wafers mit Halogenlampen erzielt wird. (de)
  • Le procédé de recuit rapide (sigle RTA en anglais) est un procédé de fabrication qui porte le wafer de silicium à haute température (jusqu'à 1 200 °C ou plus) dans un temps très court, quelques secondes. (fr)
  • Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock. Such rapid heating rates are often attained by high intensity lamps or lasers. These processes are used for a wide variety of applications in semiconductor manufacturing including dopant activation, thermal oxidation, metal reflow and chemical vapor deposition. (en)
  • ラピッドサーマルプロセス(英: rapid thermal processing、RTP)とは、シリコンウェハーを数秒あるいはそれ以下の時間スケールで高温(1,000 °C以上)に加熱する半導体製造プロセスのこと。しかし熱衝撃による転移やウェハー破壊を防ぐため、冷却ではウェハー温度をゆっくりと下げる。このような高速な加熱速度は、高強度のランプやレーザーによって行われる。このプロセスは、熱酸化、メタルリフロー、化学気相成長など、半導体製造における様々な応用に用いられる。 (ja)
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  • Rapid Thermal Processing (dt.: schnelle thermische Bearbeitung) ist ein Überbegriff für die Bearbeitung von Wafern in einem Hochtemperaturprozess, bei dem eine sehr rasche Erhitzung des Wafers mit Halogenlampen erzielt wird. (de)
  • Le procédé de recuit rapide (sigle RTA en anglais) est un procédé de fabrication qui porte le wafer de silicium à haute température (jusqu'à 1 200 °C ou plus) dans un temps très court, quelques secondes. (fr)
  • Rapid thermal processing (RTP) is a semiconductor manufacturing process which heats silicon wafers to temperatures exceeding 1,000°C for not more than a few seconds. During cooling wafer temperatures must be brought down slowly to prevent dislocations and wafer breakage due to thermal shock. Such rapid heating rates are often attained by high intensity lamps or lasers. These processes are used for a wide variety of applications in semiconductor manufacturing including dopant activation, thermal oxidation, metal reflow and chemical vapor deposition. (en)
  • ラピッドサーマルプロセス(英: rapid thermal processing、RTP)とは、シリコンウェハーを数秒あるいはそれ以下の時間スケールで高温(1,000 °C以上)に加熱する半導体製造プロセスのこと。しかし熱衝撃による転移やウェハー破壊を防ぐため、冷却ではウェハー温度をゆっくりと下げる。このような高速な加熱速度は、高強度のランプやレーザーによって行われる。このプロセスは、熱酸化、メタルリフロー、化学気相成長など、半導体製造における様々な応用に用いられる。 (ja)
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