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Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs. NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET. The degradation exhibits logarithmic dependence on time. It is of immediate concern in p-channel MOS devices, since they almost always operate with negative gate-to-source voltage; however, the very same mechanism also affects nMOS transistors when biased in the accumulation regime, i.e. with a negative bias applied to the gate.

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  • Negative-bias temperature instability
  • NBTI
  • 负偏置温度不稳定性
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  • Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs. NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET. The degradation exhibits logarithmic dependence on time. It is of immediate concern in p-channel MOS devices, since they almost always operate with negative gate-to-source voltage; however, the very same mechanism also affects nMOS transistors when biased in the accumulation regime, i.e. with a negative bias applied to the gate.
  • NBTI(えぬびーてぃーあい)とは、(英語: Negative Bias Temperature Instability : 負バイアス温度不安定性)の略で、P型半導体(PMOS)の劣化メカニズムのひとつ。古くはスロートラップ現象と呼ばれていた。1990年代はじめに観測された現象で、加工プロセスの微細化に伴い顕在化している。
  • 负偏置温度不稳定性(英语:Negative-bias temperature instability, NBTI)是影响金屬氧化物半導體場效電晶體可靠性的一个重要问题,它主要表现为阈值电压的偏移。
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  • Negative-bias temperature instability (NBTI) is a key reliability issue in MOSFETs. NBTI manifests as an increase in the threshold voltage and consequent decrease in drain current and transconductance of a MOSFET. The degradation exhibits logarithmic dependence on time. It is of immediate concern in p-channel MOS devices, since they almost always operate with negative gate-to-source voltage; however, the very same mechanism also affects nMOS transistors when biased in the accumulation regime, i.e. with a negative bias applied to the gate.
  • NBTI(えぬびーてぃーあい)とは、(英語: Negative Bias Temperature Instability : 負バイアス温度不安定性)の略で、P型半導体(PMOS)の劣化メカニズムのひとつ。古くはスロートラップ現象と呼ばれていた。1990年代はじめに観測された現象で、加工プロセスの微細化に伴い顕在化している。
  • 负偏置温度不稳定性(英语:Negative-bias temperature instability, NBTI)是影响金屬氧化物半導體場效電晶體可靠性的一个重要问题,它主要表现为阈值电压的偏移。
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